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104 条记录 (耗时 0.03 秒)

    Magnetic head and method of production thereof
    81.
    发明授权
    Magnetic head and method of production thereof 失效
    磁头及其制造方法

    公开(公告)号：US4354212A

    公开(公告)日：1982-10-12

    申请号：US166808

    申请日：1980-07-08

    申请人： Norimoto Nouchi ,  Kenji Kanai ,  Nobuyuki Kaminaka ,  Noboru Nomura

    发明人： Norimoto Nouchi ,  Kenji Kanai ,  Nobuyuki Kaminaka ,  Noboru Nomura

    IPC分类号： G11B5/39 ,  G11B5/12 ,  G11B5/30

    CPC分类号： G11B5/3932

    摘要： A magnetic head and a production method therefore in which permanent magnet films for applying a DC bias magnetic field Hd h to a magnetoresistive effect element film (MR element film) is arranged on both sides of the thickness dimension of the MR element film through at least a non-magnetic film therebetween. In making the MR element film thicker in order to reduce distortion, the DC bias magnetic field Hd b to be applied to the MR element film is also required to be increased. Unlike the prior art in which the above-mentioned requirement is met by increasing the thickness of the permanent magnet film under the thickness of the MR element film resulting in the problem of breakage of a film member above or under the thickness of the permanent magnet film, the invention further comprises a second permanent magnet film above the thickness of the MR element film without increasing the thickness of the first permanent magnet film. In the case of a magnetic head with a shield members of soft magnetic material holding the MR element film from both sides of the thickness thereof, the MR element film is made thicker to make reproduction possible without any distortion or without substantially increasing the gap. For this purpose, the MR element film is held on the sides above and under the thickness thereof by first and second permanent magnet films which in turn are held by the shield members. To minimize distribution of the MR element film, a comparatively high-temperature process after forming of the MR element film i.e., forming of the second permanent magnet film is effected at optimum temperature, and a magnetic field is applied along the magnetic easy axis of the MR element film.

    摘要翻译： 因此，磁头及其制造方法，其中用于将DC偏置磁场Hd h施加到磁阻效应元件膜（MR元件膜）的永磁体膜至少布置在MR元件膜的厚度尺寸的两侧 它们之间的非磁性膜。 为了使MR元件膜变厚以减少畸变，还需要增加施加到MR元件膜的DC偏置磁场Hd b。 不同于通过在MR元件膜的厚度下增加永磁体膜的厚度来满足上述要求的现有技术，导致膜构件在永磁体膜的厚度以上或以下的厚度的断裂的问题 本发明还包括在MR元件膜的厚度之上的第二永磁体膜，而不增加第一永磁体膜的厚度。 在具有从其厚度的两侧保持MR元件膜的软磁材料的屏蔽构件的磁头的情况下，将MR元件膜制成更厚以使得再现成为可能而没有任何变形或基本上不增加间隙。 为此，MR元件膜通过第一和第二永磁体膜保持在其厚度的上方和下方，该永磁体膜又由屏蔽部件保持。 为了最小化MR元件膜的分布，在形成MR元件膜之后进行比较高温处理，即形成第二永久磁铁膜，在最佳温度下进行，沿着磁性容易轴施加磁场 MR元件膜。

    Navigation system
    83.
    发明申请
    Navigation system 失效
    导航系统

    公开(公告)号：US20050137795A1

    公开(公告)日：2005-06-23

    申请号：US10960022

    申请日：2004-10-08

    申请人： Kiyomi Sakamoto ,  Noboru Nomura ,  Shinji Kubota

    发明人： Kiyomi Sakamoto ,  Noboru Nomura ,  Shinji Kubota

    IPC分类号： G01C21/36 ,  G01C21/34

    CPC分类号： G01C21/3641 ,  G01C21/36 ,  G01C21/3655 ,  G01C21/367 ,  G01C21/3673

    摘要： A navigation system for providing different modes of navigation guidance to drivers is provided. A smart card stores user information. In a main apparatus, a parameter table storage section stores parameters which are used for controlling the outputting of navigation guidance to an entity. A control section acquires at least one parameter from the parameter table storage section based on the user information stored in the smart card, and thereafter generates information necessary for providing navigation guidance for the entity in accordance with the acquired parameter(s). A display section or an audio output section outputs various information generated by the control section.

    摘要翻译： 提供了一种用于向驾驶员提供不同模式的导航指导的导航系统。 智能卡存储用户信息。 在主装置中，参数表存储部存储用于控制向实体输出导航指导的参数。 控制部根据存储在智能卡中的用户信息从参数表存储部中取得至少一个参数，然后根据取得的参数生成为实体提供导航指导所必需的信息。 显示部分或音频输出部分输出由控制部分生成的各种信息。

    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
    84.
    发明授权
    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same 失效
    半导体微针的集合体及其制造方法以及半导体装置及其制造方法

    公开(公告)号：US06734451B2

    公开(公告)日：2004-05-11

    申请号：US10274910

    申请日：2002-10-22

    申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    IPC分类号： H01L2906

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G10H1/0041 ,  G10H7/02 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  Y02E10/547 ,  Y02P70/521

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Method of making aggregate of semiconductor micro-needles
    86.
    发明授权
    Method of making aggregate of semiconductor micro-needles 有权
    制造半导体微针聚集体的方法

    公开(公告)号：US06177291B1

    公开(公告)日：2001-01-23

    申请号：US09499735

    申请日：2000-02-08

    申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    IPC分类号： H01L2132

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon. each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后形成由硅制成的半球状晶粒。 每个都具有非常小的直径，通过LPCVD沉积在其上。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Dry-etching process simulator
    89.
    发明授权
    Dry-etching process simulator 失效
    干蚀刻工艺模拟器

    公开(公告)号：US5421934A

    公开(公告)日：1995-06-06

    申请号：US37298

    申请日：1993-03-26

    申请人： Akio Misaka ,  Kenji Harafugi ,  Masafumi Kubbota ,  Noboru Nomura

    发明人： Akio Misaka ,  Kenji Harafugi ,  Masafumi Kubbota ,  Noboru Nomura

    IPC分类号： G06F17/50 ,  H01L21/30 ,  H01L21/00

    CPC分类号： H01L21/30 ,  G06F17/5018

    摘要： A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of absorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by absorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been provided. The simulator is applied to silicon-dioxide trench teachings made by hydrofluorcarbon gases. The topography simulator is used in a dry-etching process for realizing sub-half micron patternings.

    摘要翻译： 已经提出了一种新的表面反应模型，通过考虑衬底表面上吸收的自由基的存在来模拟拓扑演化。 该模型通过表面上吸收的自由基将蚀刻速率视为覆盖率的函数。 基于该模型，提供了二维地形模拟器。 模拟器应用于由氢氟碳气体制成的二氧化硅沟槽教导。 地形模拟器用于实现半微米图案的干蚀刻工艺。

    Plasma generating apparatus
    90.
    发明授权
    Plasma generating apparatus 失效
    等离子体发生装置

    公开(公告)号：US5404079A

    公开(公告)日：1995-04-04

    申请号：US97230

    申请日：1993-07-27

    申请人： Mitsuhiro Ohkuni ,  Masafumi Kubota ,  Noboru Nomura ,  Ichiro Nakayama ,  Tokuhiko Tamaki

    发明人： Mitsuhiro Ohkuni ,  Masafumi Kubota ,  Noboru Nomura ,  Ichiro Nakayama ,  Tokuhiko Tamaki

    IPC分类号： H01J37/32 ,  H01J7/24

    CPC分类号： H01J37/32082 ,  H01J37/32165

    摘要： On the inner surface of a chamber are circumferentially disposed three lateral electrodes at regular intervals. To the lateral electrodes are applied three high-frequency electric powers of 50 MHz, each differing in phase by approximately 120.degree.. On the bottom of the chamber is placed a sample stage serving as a second electrode, around which is provided a ring-shaped earth electrode. To the sample stage is applied high-frequency electric power of 13.56 MHz. The distance between each of the three lateral electrodes and the earth electrode is longer than the distance between the sample stage and the earth electrode.

    摘要翻译： 在室的内表面上以规则的间隔周向设置三个横向电极。 向横向电极施加50MHz的三个高频电功率，每个相位相差大约120°。 在室的底部放置有用作第二电极的样品台，围绕其设置环形接地电极。 采样阶段采用13.56 MHz的高频电源。 三个横向电极和接地电极之间的距离比样品台和接地电极之间的距离长。