公开(公告)号：US20060089000A1

公开(公告)日：2006-04-27

申请号：US10973683

申请日：2004-10-26

申请人： Ronald Della Guardia ,  Ranee Kwong ,  Wenjie Li ,  Qinghuang Lin ,  Dirk Pfeiffer ,  David Rath

发明人： Ronald Della Guardia ,  Ranee Kwong ,  Wenjie Li ,  Qinghuang Lin ,  Dirk Pfeiffer ,  David Rath

IPC分类号： H01L21/461 ,  C09K13/00 ,  H01L21/302

CPC分类号： H01L21/76808 ,  C09K13/08 ,  H01L21/31144

摘要： In the back end of integrated circuits employing low-k interlevel dielectrics, etched structures are filled with a planarizing material comprising a cyclic olefin polymer and solvent; the next pattern to be etched is defined in a photosensitive layer above the planarizing layer; the pattern is etched in the dielectric and the planarizing material is stripped in a wet process that does not damage the interlevel dielectric.

摘要翻译： 在采用低k层间电介质的集成电路的后端，用包含环烯烃聚合物和溶剂的平面化材料填充蚀刻结构; 待蚀刻的下一个图案被限定在平坦化层上方的感光层中; 在电介质中蚀刻图案，并且在不损坏层间电介质的湿法中剥离平面化材料。

公开(公告)号：US20050112382A1

公开(公告)日：2005-05-26

申请号：US10721302

申请日：2003-11-24

申请人： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

发明人： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

IPC分类号： B32B25/20 ,  C07F7/21 ,  G03F7/004 ,  G03F7/075

CPC分类号： C07F7/21 ,  G03F7/0045 ,  G03F7/0755 ,  Y10S430/106 ,  Y10S430/127 ,  Y10T428/31663

摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

摘要翻译： 提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解 通常在T T以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

公开(公告)号：US06344305B1

公开(公告)日：2002-02-05

申请号：US09654350

申请日：2000-09-01

申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0757

摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。

公开(公告)号：US06303275B1

公开(公告)日：2001-10-16

申请号：US09501653

申请日：2000-02-10

申请人： Robert A. Coles ,  John W. Golz ,  Qinghuang Lin ,  Alan C. Thomas ,  Christopher J. Waskiewicz ,  Teresa J. Wu

发明人： Robert A. Coles ,  John W. Golz ,  Qinghuang Lin ,  Alan C. Thomas ,  Christopher J. Waskiewicz ,  Teresa J. Wu

IPC分类号： G03C500

CPC分类号： G03F7/16 ,  G03F7/168

摘要： A method of forming a resist layer of uniform thickness across a surface patterned with a varying density of high aspect ratio features. A selected material layer having an affinity to a resist coat to be applied over the selected material layer is applied to a wafer having a plurality of recesses before applying a resist coat. After the resist coat is applied over the selected material layer, the selected material diffuses partially into the resist coat to condition a portion of the resist coat to be insoluble in the presence of a developer which is applied after the resist coat. Those portions of the resist coat into which the selected material layer has not diffused then are removed by a developer leaving a uniform resist coat thickness across the wafer.

摘要翻译： 一种形成均匀厚度的抗蚀剂层的方法，该抗蚀剂层跨越具有不同密度的高纵横比特征的图案化的表面。 在施加抗蚀剂涂层之前，将具有与要涂覆在所选择的材料层上的抗蚀剂涂层具有亲和性的所选材料层施加到具有多个凹部的晶片上。 在抗蚀剂涂层施加在所选择的材料层上之后，所选择的材料部分地扩散到抗蚀剂涂层中，以使抗蚀剂涂层的一部分在抗蚀剂涂层之后施加的显影剂的存在下不溶。 所选择的材料层未被扩散的抗蚀剂涂层的那些部分被显影剂除去，在晶片上留下均匀的抗蚀剂涂层厚度。

公开(公告)号：US06303263B1

公开(公告)日：2001-10-16

申请号：US09030568

申请日：1998-02-25

申请人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

发明人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/11 ,  Y10S430/111

摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.

摘要翻译： 本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。 根据本发明，聚合物树脂包含双嵌段聚合物树脂。 具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。 包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

公开(公告)号：US06187505B1

公开(公告)日：2001-02-13

申请号：US09241441

申请日：1999-02-02

申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0757

摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。

公开(公告)号：US6103447A

公开(公告)日：2000-08-15

申请号：US30566

申请日：1998-02-25

申请人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

发明人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/111

摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

摘要翻译： 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基保护，并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

公开(公告)号：US08900988B2

公开(公告)日：2014-12-02

申请号：US13088083

申请日：2011-04-15

申请人： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral, Jr.

发明人： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral, Jr.

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L23/5222 ,  H01L21/31127 ,  H01L21/7682 ,  H01L21/76885 ,  H01L23/4821 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

摘要翻译： 用于形成自对准气隙互连结构的装置和方法包括将导电层蚀刻到衬底以形成具有图案化间隙的导电结构并用牺牲材料填充间隙。 将牺牲材料平坦化以暴露导电层的顶表面。 在导电结构和牺牲材料上沉积可渗透盖层。 通过可渗透层去除牺牲材料形成自对准的气隙。

公开(公告)号：US08795556B2

公开(公告)日：2014-08-05

申请号：US13454723

申请日：2012-04-24

申请人： Qinghuang Lin

发明人： Qinghuang Lin

IPC分类号： C09K5/00 ,  G03F7/095 ,  G03F7/075 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  H01L21/31 ,  G03F7/039 ,  H01L21/02 ,  H01L23/532 ,  G03F7/038

CPC分类号： H01L23/53295 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02345 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.

摘要翻译： 提供了具有双重色调的混合光可图案化电介质材料，具有抛物线，如对辐射的溶解响应。 在一个实施方案中，混合光可图案化电介质材料包括至少一种正色调组分的组合物，其包括正色调聚合物，正色调共聚物或具有一个单体的正性聚合物和/或正性色调共聚物的共混物 或更多的酸敏感正音官能团; 至少一种负色调组分，包括负色调聚合物，负性色谱共聚物或具有一个或多个酸敏感负性官能团的负色调聚合物和/或负色调共聚物的共混物; 至少一个光致酸发生器; 和至少一种与正性和负性成分相容的溶剂。

公开(公告)号：US08642252B2

公开(公告)日：2014-02-04

申请号：US12721032

申请日：2010-03-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

IPC分类号： H01L21/764

CPC分类号： H01L23/4821 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。