公开(公告)号：US20150038094A1

公开(公告)日：2015-02-05

申请号：US14450028

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H04B1/44 ,  H04B1/40

CPC classification number: H04B1/0458 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.

Abstract translation: 公开了射频（RF）滤波器前端电路的实施例，其包括具有弱耦合谐振器和电压驻波比（VSWR）控制电路的可调RF滤波器结构。 VSWR控制电路被配置为检测可调谐RF滤波器结构的终端处的VSWR，并且基于VSWR动态地调谐可调谐RF滤波器结构。 以这种方式，VSWR控制电路调谐可调谐RF滤波器结构，以改善可变RF滤波器结构的性能，而不是VSWR的变化。

公开(公告)号：US20150035637A1

公开(公告)日：2015-02-05

申请号：US14450156

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01F27/29 ,  H01F17/02

CPC classification number: H01F17/0013 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/525

Abstract: Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.

Abstract translation: 公开了包括衬底和驻留在衬底中的电感器的装置的实施例。 在一个实施例中，电感器形成为从第一端子延伸到第二端子的导电路径。 导电路径具有对应于放置在三维（3D）体积上的二维（2D）波瓣的形状。 由于导电路径的形状对应于放置在3D体积上的2D波瓣，由电感器产生的磁场具有在电感器外部主要破坏的磁场线和在电感器内主要构造的磁场线。 以这种方式，电感器可以在靠近其他部件放置的同时保持高品质（Q）因子。

公开(公告)号：US10121718B2

公开(公告)日：2018-11-06

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09899289B2

公开(公告)日：2018-02-20

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09780756B2

公开(公告)日：2017-10-03

申请号：US14449764

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/09 ,  H03H7/01 ,  H03J5/24 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72

CPC classification number: H03H7/0161 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H03J5/242

Abstract: Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations.

公开(公告)号：US09761367B2

公开(公告)日：2017-09-12

申请号：US14927546

申请日：2015-10-30

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/46 ,  H01F27/28 ,  H03H7/38 ,  H04B1/40 ,  H04J1/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H03H7/38 ,  H03H7/463 ,  H04B1/40 ,  H04J1/08

Abstract: Multiplexing circuitry is disclosed that includes filtering circuitry, which provides a first transfer function between a common port and a first port and a second transfer function between the common port and a second port. The first transfer function and second transfer function provide a first passband and a second passband, respectively. The first transfer function also has a stopband provided within the second passband of the second transfer function due to the filtering circuitry including a first parallel resonant circuit provided in series in a first filter path being weakly coupled to a second parallel resonant provided in shunt with respect to a second filter path. The weak coupling between the first parallel resonant circuit and the second parallel resonant circuit thus naturally provides a stopband in the first transfer function within the second passband of the second transfer function.

公开(公告)号：US09755671B2

公开(公告)日：2017-09-05

申请号：US14450028

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03F3/24 ,  H03F3/19 ,  H04B1/16 ,  H04B1/04 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0458 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.

公开(公告)号：US09741632B2

公开(公告)日：2017-08-22

申请号：US14851652

申请日：2015-09-11

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/367 ,  H01L23/373 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/02 ,  H01L21/56 ,  H01L21/762

Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

公开(公告)号：US09653772B2

公开(公告)日：2017-05-16

申请号：US14931621

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L27/08 ,  H01P7/06 ,  H01L21/027 ,  H01L49/02 ,  H03H9/24 ,  H01P7/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

Abstract: A resonator includes a laminate, an inductive element on the laminate, and a semiconductor die attached to the inductive element and the laminate. The semiconductor die includes a substrate and a device layout area. The device layout area is separated into a number of device layout sub-areas, each of which has an area between about 1.0 μm2 and 100.0 μm2. By limiting the area of each one of the device layout sub-areas with the charge carrier trap trenches, the total area of the semiconductor die prone to inducement of eddy currents (i.e., the layer of accumulated charge at the interface of the substrate and the device layout area) is reduced, which in turn reduces interference with the magnetic field of the inductive element and thus improves the performance of the resonator.

公开(公告)号：US09647641B2

公开(公告)日：2017-05-09

申请号：US14450199

申请日：2014-08-01

Applicant: RF Micro Devices, inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03J3/06 ,  H03H7/01 ,  H03H7/46 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03J5/24 ,  H03H7/38

Abstract: RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.