Abstract:
A dielectric for aluminum and copper metalizations is stable at high temperatures. Surprisingly, in spite of the elimination of water during the cyclization, the polymeric dielectrics are very suitable for filling narrow trenches. The filled trenches exhibit no defects and bubbles or cracks. The polybenzoxazoles have dielectric constants of k≦2.7 and are suitable as an electrical insulator. Furthermore, these materials adhere very well on all surfaces relevant for micro-electronics.
Abstract:
Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
Abstract:
The invention relates to a layer arrangement and to a process for producing a layer arrangement. The layer arrangement has a layer which is arranged on a substrate and includes a first subregion comprising decomposable material and a second subregion which is arranged next to the first subregion and has a useful structure comprising a non-decomposable material. Furthermore, the layer arrangement has a covering layer on the layer comprising decomposable material and the useful structure, the layer arrangement being designed in such a manner that the decomposable material can be removed from the layer arrangement.
Abstract:
A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.
Abstract:
Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.
Abstract:
Bis-o-aminophenols, which carry on at least one of their hydroxyl groups a tert-butoxy-carbonyl group, can be reacted with dicarboxylic acids to give the corresponding poly-o-hydroxyamides. Following cyclization to the polybenzoxazole, these polymers have a lower dielectric constant than compounds prepared from corresponding poly-o-hydroxyamides which do not carry any tert-butoxycarbonyl group.
Abstract:
The following invention relates to phenyl-linked polybenzoxazoles having terminal, aryl- or heteroaryl-attached cyanate groups which can be used for adhesive bonding and as dielectrics, especially for electronic components, and to a process for preparing them.
Abstract:
The present invention describes the use of poly-o-hydroxy amides (PHAs) for adhesively bonding articles or materials, especially components used in the semiconductor industry, such as chips and wafers, a process for adhesively bonding materials, especially chips and/or wafers, chip and/or wafer stacks produced by the process, and adhesive compositions which comprise the poly-o-hydroxy amides of the formula (I).
Abstract:
Bis-o-aminophenols and o-aminophenolcarboxylic acids have the following structures: A1 to A7 are, independently of each other, H, F, CH3, CF3, OCH3 or OCF3. T is an aromatic or heterocyclic residue. A method for preparing bis-o-aminophenols and o-aminophenolcarboxylic acids is also provided.
Abstract:
UV-hardenable and thermally hardenable epoxy resins for the underfilling process in electrical and electronic components are provided. A new casting resin component has an increased storage stability at room temperature of at least 6 months and improved characteristics for the underfilling process including faster hardening and lower viscosity. Filler material with a maximum grain size of 20 &mgr;m and a siloxane component are provided in addition to the casting resin formulation.