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103 条记录 (耗时 0.027 秒)

    Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device
    82.
    发明申请
    Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device 有权
    光电转换装置及其制造方法及半导体装置

    公开(公告)号：US20110291090A1

    公开(公告)日：2011-12-01

    申请号：US13206544

    申请日：2011-08-10

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/0376

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

    摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

    Semiconductor device and method of manufacturing the same
    83.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07888714B2

    公开(公告)日：2011-02-15

    申请号：US11226472

    申请日：2005-09-15

    申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    IPC分类号： H01L31/062

    CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

    摘要： Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

    摘要翻译： 考虑到传感器元件的高输出和小型化的进一步促进，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

    Photoelectric Conversion Device and Manufacturing Method Thereof
    84.
    发明申请
    Photoelectric Conversion Device and Manufacturing Method Thereof 有权
    光电转换装置及其制造方法

    公开(公告)号：US20110000545A1

    公开(公告)日：2011-01-06

    申请号：US12820439

    申请日：2010-06-22

    申请人： Kazuo Nishi ,  Naoto Kusumoto

    发明人： Kazuo Nishi ,  Naoto Kusumoto

    IPC分类号： H01L31/105 ,  H01L31/18

    CPC分类号： H01L31/022433 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.

    摘要翻译： 包括第一电极，具有一种导电类型的第一杂质半导体层，本征半导体层，与一种导电类型具有相反导电类型的第二杂质半导体层和透光第二电极的堆叠形成在绝缘体 。 透光第二电极和第二杂质半导体层具有一个或多个开口。 在第二杂质半导体层和本征半导体层之间的界面的水平处，一个开口的一个壁的一部分与相同开口的壁的相对部分之间的最短距离小于孔的扩散长度 本征半导体层。 因此，抑制复合，使得由于开口而产生更多的光载流子作为电流而被取出，从而提高了转换效率。

    Method of manufacturing electronic part
    85.
    发明授权
    Method of manufacturing electronic part 有权
    制造电子零件的方法

    公开(公告)号：US07845071B2

    公开(公告)日：2010-12-07

    申请号：US11072989

    申请日：2005-03-07

    申请人： Hisao Morooka ,  Hideaki Ninomiya ,  Junichi Shimamura ,  Kazuo Nishi

    发明人： Hisao Morooka ,  Hideaki Ninomiya ,  Junichi Shimamura ,  Kazuo Nishi

    IPC分类号： H05K3/30

    CPC分类号： H01L31/18 ,  H01L21/67132 ,  H05K1/0393 ,  H05K3/0058 ,  Y10T29/49117 ,  Y10T29/4913 ,  Y10T29/49131 ,  Y10T29/49144 ,  Y10T29/5193 ,  Y10T29/53174

    摘要： The present invention provides a substrate holding method capable of contributing to improvement in performance of an electronic part. A plastic film is adhered to a holding frame by using an adhesive tape having a proper gas releasing characteristic such that total quantity of gas detected when analysis using gas chromatograph mass spectrometry (dynamic HS-GC-MS) is conducted under test conditions of 180° C. and 10 minutes is 100.5 μg/g or less in n-tetradecane. In the case where the plastic film held by the holding frame is subjected to a process of manufacturing an electronic part (for example, a solar battery), even when a process accompanying generation of heat during the manufacturing process (for example, a film forming process such as plasma CVD) is performed on the plastic film, a release amount of unnecessary gas released from the adhesive tape due to the influence of the heat is suppressed, so that deterioration in the performance of the electronic part caused by the unnecessary gas is suppressed.

    摘要翻译： 本发明提供能够有助于提高电子部件的性能的基板保持方法。 通过使用具有适当的气体释放特性的粘合带将塑料膜粘附到保持框架上，使得在使用气相色谱质谱（动态HS-GC-MS）进行分析时检测到的气体总量在180°的测试条件下进行 C.正十四烷中10分钟为100.5μg/ g以下。 在由保持框架保持的塑料膜经受制造电子部件（例如，太阳能电池）的处理的情况下，即使在制造过程中伴随发热的处理（例如，成膜 在塑料膜上进行等离子体CVD等工序），能够抑制由于热量的影响而从粘合带释放的不需要的气体的释放量，不利气体导致的电子部件的性能下降 被压制

    Semiconductor device
    86.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07838812B2

    公开(公告)日：2010-11-23

    申请号：US12350271

    申请日：2009-01-08

    申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    IPC分类号： H01J40/14 ,  H03F3/08 ,  H03K17/78 ,  H04N3/14

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

    Photoelectric conversion device and semiconductor device
    87.
    发明授权
    Photoelectric conversion device and semiconductor device 有权
    光电转换器件和半导体器件

    公开(公告)号：US07772667B2

    公开(公告)日：2010-08-10

    申请号：US11383645

    申请日：2006-05-16

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/075

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

    摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME, AND A SEMICONDUCTOR DEVICE
    89.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME, AND A SEMICONDUCTOR DEVICE 有权
    光电转换装置及其制造方法和半导体器件

    公开(公告)号：US20090126790A1

    公开(公告)日：2009-05-21

    申请号：US12355187

    申请日：2009-01-16

    申请人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

    发明人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

    IPC分类号： H01L31/0232 ,  H01L31/0224

    CPC分类号： H01L31/1133 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14687

    摘要： A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.

    摘要翻译： 提供了具有可以抑制静电放电损坏的结构的光传感器。 通常，在光接收区域的整个表面上形成透明电极; 然而，在本发明中，不形成透明电极，并且使用光电转换层的p型半导体层和n型半导体层作为电极。 因此，在根据本发明的光电传感器中，电阻增加可以抑制静电放电损坏。 此外，用作电极的p型半导体层和n型半导体层的位置被保留; 因此，电阻增加，并且可以提高耐受电压。