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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08415664B2

    公开(公告)日：2013-04-09

    申请号：US13271272

    申请日：2011-10-12

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

    Photoelectric conversion device and manufacturing method thereof
    3.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 有权
    光电转换装置及其制造方法

    公开(公告)号：US09059347B2

    公开(公告)日：2015-06-16

    申请号：US13159579

    申请日：2011-06-14

    申请人： Kazuo Nishi ,  Takashi Hirose ,  Naoto Kusumoto

    发明人： Kazuo Nishi ,  Takashi Hirose ,  Naoto Kusumoto

    IPC分类号： H01L31/06 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0465

    CPC分类号： H01L31/03762 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/0465 ,  H01L31/1816 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.

    摘要翻译： 具有低照度的高发电量的光电转换装置，其中半导体层被适当地分离并且防止了电池的侧表面部分的短路。 光电转换装置包括形成在与第一电极相邻的一个第一电极和另一个第一电极之间的隔离槽; 包括在第一电极上具有一种导电类型的第一半导体层的堆叠，使用本征半导体形成的第二半导体层和具有与一种导电类型相反的导电类型的第三半导体层; 以及连接电极，其连接与包含在与所述一个第一电极相邻的另一个第一电极上形成的堆叠中的第三半导体层接触的第一电极和第二电极。 第二半导体层的侧表面部分不结晶。

    Semiconductor device and manufacturing method thereof
    4.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08258512B2

    公开(公告)日：2012-09-04

    申请号：US12752388

    申请日：2010-04-01

    申请人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

    发明人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

    IPC分类号： H01L29/04

    CPC分类号： H01L27/14665 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14692

    摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

    摘要翻译： 本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。 根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件 通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。 因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。

    Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
    5.
    发明授权
    Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device 有权
    光电转换装置和电子装置以及光电转换装置的制造方法

    公开(公告)号：US08207589B2

    公开(公告)日：2012-06-26

    申请号：US12068849

    申请日：2008-02-12

    申请人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

    发明人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

    IPC分类号： H01L27/146

    CPC分类号： H01L31/147 ,  H01L27/12 ,  H01L27/1214 ,  H01L31/153 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

    摘要翻译： 一种光电转换装置，包括：第一基板，其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。 第一电极和第二电极分别被附接到第三和第四电极，导电材料不仅设置在第一，第二，第三和第四电极的彼此面对，而且在第一和第二电极的第一和第二电极的侧表面处 第二电极，以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08053816B2

    公开(公告)日：2011-11-08

    申请号：US11681638

    申请日：2007-03-02

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。 此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。 本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触， 并且其中滤色器的端部位于光电转换层的另一端部的内部。