公开(公告)号：US07227213B2

公开(公告)日：2007-06-05

申请号：US10997250

申请日：2004-11-24

申请人： Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： H01L29/76 ,  H01L21/425

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The process for manufacturing a through insulated interconnection is performed by forming, in a body of semiconductor material, a trench extending from the front (of the body for a thickness portion thereof; filling the trench with dielectric material; thinning the body starting from the rear until the trench, so as to form an insulated region surrounded by dielectric material; and forming a conductive region extending inside said insulated region between the front and the rear of the body and having a higher conductivity than the first body. The conductive region includes a metal region extending in an opening formed inside the insulated region or of a heavily doped semiconductor region, made prior to filling of the trench.

摘要翻译： 通过绝缘互连制造的方法是通过在半导体材料体中形成从前部（其主体的厚度部分）延伸的沟槽;用电介质材料填充沟槽;从后面开始使身体变薄 直到形成由电介质材料包围的绝缘区域，形成在主体前后的绝缘区域内延伸的导电性区域，并具有比第1主体高的导电性，导电区域包括： 金属区域在形成在绝缘区域内的开口中延伸，或者在填充沟槽之前制成的重掺杂半导体区域。

公开(公告)号：US20050282221A1

公开(公告)日：2005-12-22

申请号：US11191325

申请日：2005-07-28

申请人： Gabriele Barlocchi ,  Pietro Corona ,  Ubaldo Mastromatteo ,  Flavio Villa

发明人： Gabriele Barlocchi ,  Pietro Corona ,  Ubaldo Mastromatteo ,  Flavio Villa

IPC分类号： B01L3/00 ,  B01L7/00 ,  C12M1/34 ,  C12Q1/68

CPC分类号： B01L7/52 ,  B01L3/5025 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/1827

摘要： A process for manufacturing a microfluidic device, including the steps of: forming at least one channel in a semiconductor material body; forming a dielectric diaphragm above the channel, for closing the channel; and forming heating elements for providing thermal energy inside the channel. The heating elements are formed directly on said dielectric diaphragm.

摘要翻译： 一种用于制造微流体装置的方法，包括以下步骤：在半导体材料体中形成至少一个通道; 在通道上形成介质隔膜，用于封闭通道; 以及形成用于在通道内提供热能的加热元件。 加热元件直接形成在所述介质隔膜上。

公开(公告)号：US20050233440A1

公开(公告)日：2005-10-20

申请号：US11092415

申请日：2005-03-29

申请人： Mario Scurati ,  Ubaldo Mastromatteo ,  Michele Palmieri

发明人： Mario Scurati ,  Ubaldo Mastromatteo ,  Michele Palmieri

IPC分类号： B01F13/00 ,  B01L3/00 ,  B01L7/00 ,  B03C5/02 ,  G01N27/447 ,  C12M1/34 ,  C12Q1/68

CPC分类号： G01N27/44704 ,  B01F13/0059 ,  B01L3/502715 ,  B01L7/525 ,  B01L2200/10 ,  B01L2300/0636 ,  B01L2300/0816 ,  B01L2300/0867 ,  B01L2300/0874 ,  B01L2300/1827 ,  B01L2400/0415 ,  B01L2400/0424 ,  B01L2400/049 ,  B01L2400/0677 ,  B03C5/026 ,  B03C2201/26

摘要： An integrated device for nucleic acid analysis having a support and a first tank for introducing a raw biological specimen includes at least one pre-treatment channel, a buried amplification chamber, and a detection chamber carried by the support and in fluid connection with one another and with the tank. The device can be used for all types of biological analyses.

摘要翻译： 用于具有支撑物和用于引入原始生物样本的第一罐的用于核酸分析的集成装置包括至少一个预处理通道，掩埋放大室和由支撑件承载并彼此流体连接的检测室，以及 与坦克。 该设备可用于所有类型的生物分析。

公开(公告)号：US20050181392A1

公开(公告)日：2005-08-18

申请号：US10996593

申请日：2004-11-24

申请人： Gabriele Barlocchi ,  Ubaldo Mastromatteo ,  Flavio Villa

发明人： Gabriele Barlocchi ,  Ubaldo Mastromatteo ,  Flavio Villa

IPC分类号： B81B1/00 ,  B81C1/00 ,  C12Q1/68 ,  C12M1/34

CPC分类号： B81C1/00539 ,  B81B1/002 ,  B81B2201/0214 ,  B81B2201/051 ,  B81C1/00404

摘要： The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a diaphragm extending on top of the body and upwardly closing the channel. The diaphragm is formed by a semiconductor layer completely encircling mask portions of insulating material.

摘要翻译： 微反应器具有半导体材料体; 一个大面积的埋藏通道延伸到身体并具有墙壁; 覆盖通道壁的绝缘材料的涂层; 一个在主体顶部延伸并向上关闭通道的隔膜。 隔膜由完全环绕绝缘材料的掩模部分的半导体层形成。

公开(公告)号：US20050156320A1

公开(公告)日：2005-07-21

申请号：US11005832

申请日：2004-12-07

申请人： Ubaldo Mastromatteo

发明人： Ubaldo Mastromatteo

IPC分类号： B81C1/00 ,  B81C3/00 ,  H01L21/60 ,  H01L21/98 ,  H01L29/40

CPC分类号： B81C1/00238 ,  B81C2201/019 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05684

摘要： An integrated semiconductor device includes semiconductor regions and isolation regions in a first wafer of semiconductor material, and, on a second wafer of semiconductor material, interconnection structures. Plug elements provide electrical and mechanical coupling between the first and second wafers. Each plug element includes a first region coupled to the first wafer and a second region formed of a selected metal bonded with the semiconductor regions of the first wafer, forming a metal silicide.

摘要翻译： 集成半导体器件包括半导体材料的第一晶片中的半导体区域和隔离区域，以及在半导体材料的第二晶片上的互连结构。 插头元件提供第一和第二晶片之间的电气和机械耦合。 每个插头元件包括耦合到第一晶片的第一区域和由与第一晶片的半导体区域接合的选定金属形成的第二区域，形成金属硅化物。

公开(公告)号：US06909073B2

公开(公告)日：2005-06-21

申请号：US10795589

申请日：2004-03-08

申请人： Flavio Villa ,  Gabriele Barlocchi ,  Manlio Gennaro Torchia ,  Ubaldo Mastromatteo

发明人： Flavio Villa ,  Gabriele Barlocchi ,  Manlio Gennaro Torchia ,  Ubaldo Mastromatteo

IPC分类号： B01J19/00 ,  B01L3/00 ,  B01L7/00 ,  C12M1/34 ,  C12M1/36 ,  G01N33/487 ,  H05B3/02

CPC分类号： B01L7/525 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00828 ,  B01J2219/0086 ,  B01J2219/00873 ,  B01J2219/00961 ,  B01J2219/00986 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2300/1827 ,  B01L2300/185 ,  B01L2300/1883 ,  B01L2300/1894

摘要： An integrated device based upon semiconductor technology, in particular a chemical microreactor, including a semiconductor body having a high-temperature operating portion and a low temperature operating portion. The semiconductor body is provided with a thermal-insulation device including a dissipator element arranged between the high-temperature operating portion and the low-temperature operating portion. The dissipator includes a membrane connecting the high-temperature operating portion and the low-temperature operating portion, and a plurality of diaphragms that extend substantially orthogonal to the membrane and are parallel to one another.

摘要翻译： 基于半导体技术的集成器件，特别是化学微反应器，包括具有高温操作部分和低温操作部分的半导体本体。 半导体本体设置有绝热装置，其包括设置在高温操作部和低温操作部之间的耗散元件。 散热器包括连接高温操作部分和低温操作部分的膜，以及基本上垂直于膜并且彼此平行延伸的多个膜片。

公开(公告)号：US06727479B2

公开(公告)日：2004-04-27

申请号：US10128989

申请日：2002-04-22

申请人： Flavio Villa ,  Gabriele Barlocchi ,  Manlio Gennaro Torchia ,  Ubaldo Mastromatteo

发明人： Flavio Villa ,  Gabriele Barlocchi ,  Manlio Gennaro Torchia ,  Ubaldo Mastromatteo

IPC分类号： H05B302

CPC分类号： B01L7/525 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00828 ,  B01J2219/0086 ,  B01J2219/00873 ,  B01J2219/00961 ,  B01J2219/00986 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2300/1827 ,  B01L2300/185 ,  B01L2300/1883 ,  B01L2300/1894

摘要： An integrated device based upon semiconductor technology, in particular a chemical microreactor, including a semiconductor body having a high-temperature operating portion and a low-temperature operating portion. The semiconductor body is provided with a thermal-insulation device including a dissipator element arranged between the high-temperature operating portion and the low-temperature operating portion. The dissipator includes a membrane connecting the high-temperature operating portion and the low-temperature operating portion, and a plurality of diaphragms that extend substantially orthogonal to the membrane and are parallel to one another.

摘要翻译： 基于半导体技术的集成器件，特别是化学微反应器，包括具有高温操作部分和低温操作部分的半导体本体。 半导体本体设置有绝热装置，其包括设置在高温操作部和低温操作部之间的耗散元件。 散热器包括连接高温操作部分和低温操作部分的膜，以及基本上垂直于膜并且彼此平行延伸的多个膜片。

公开(公告)号：US06673593B2

公开(公告)日：2004-01-06

申请号：US09779980

申请日：2001-02-08

申请人： Ubaldo Mastromatteo ,  Flavio Villa ,  Gabriele Barlocchi

发明人： Ubaldo Mastromatteo ,  Flavio Villa ,  Gabriele Barlocchi

IPC分类号： C12M100

CPC分类号： B65D73/00 ,  A01G9/026 ,  B01J19/0093 ,  B01J2219/00873 ,  B01J2219/00961 ,  B01L3/5025 ,  B01L3/502707 ,  B01L3/502715 ,  B01L7/52 ,  B01L2200/12 ,  B01L2200/147 ,  B01L2300/0816 ,  B01L2300/1827 ,  B26D1/245 ,  B29C53/04 ,  B29C61/02 ,  B29L2009/00 ,  B32B3/28 ,  B32B7/02 ,  B32B37/144 ,  B32B38/1866 ,  B32B2307/736 ,  B44C3/04 ,  B44C3/044 ,  B44C3/087 ,  B44C5/005 ,  B44C5/06 ,  B44F1/14 ,  F28F2260/02 ,  Y10T156/1041 ,  Y10T156/1051 ,  Y10T156/1052 ,  Y10T428/2443

摘要： The integrated device for microfluid thermoregulation comprises a semiconductor material body having a surface; a plurality of buried channels extending in the semiconductor material body at a distance from the surface of the semiconductor material body; inlet and outlet ports extending from the surface of the semiconductor material body as far as the ends of the buried channels and being in fluid connection with the buried channels; and heating elements on the semiconductor material body. Temperature sensors are arranged between the heating elements above the surface of the semiconductor material body.

摘要翻译： 用于微流体温度调节的集成装置包括具有表面的半导体材料体; 多个掩埋沟道，其在半导体材料体的与半导体材料体的表面相距一定距离处延伸; 入口和出口从半导体材料体的表面延伸到埋入通道的端部并与埋入通道流体连接; 以及半导体材料体上的加热元件。 温度传感器布置在半导体材料体表面之上的加热元件之间。

公开(公告)号：US06171931B2

公开(公告)日：2001-01-09

申请号：US09167246

申请日：1998-10-06

申请人： Bruno Murari ,  Flavio Villa ,  Ubaldo Mastromatteo

发明人： Bruno Murari ,  Flavio Villa ,  Ubaldo Mastromatteo

IPC分类号： H01L2146

CPC分类号： H01L24/83 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256 ,  H01L24/26 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/30105

摘要： A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.

摘要翻译： 一种用于制造集成器件的半导体材料晶片，包括由包括由碳化硅，氮化硅和陶瓷材料组成的材料制成的中间绝缘层分隔的第一和第二单晶硅层的叠加层。 在中间层和第二硅层之间设置氧化物接合层。 通过在加热的真空室中在第一硅层上形成中间绝缘层来制造晶片; 沉积氧化层; 并叠加第二硅层。 当硅，绝缘材料，氧化物和硅层的堆叠被热处理时，氧化物反应以将绝缘层粘合到第二硅层。 作为陶瓷材料氧化铍，可以使用氮化铝，氮化硼和氧化铝。

公开(公告)号：US6110825A

公开(公告)日：2000-08-29

申请号：US200496

申请日：1998-11-25

申请人： Ubaldo Mastromatteo ,  Bruno Murari

发明人： Ubaldo Mastromatteo ,  Bruno Murari

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01K3/10 ,  H01L21/70

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548

摘要： The process comprises the steps of: forming a through hole from the back of a semiconductor material body; forming a hole insulating layer of electrically isolating material laterally covering the walls of the through hole; forming a through contact region of conductive material laterally covering the hole insulating layer inside the hole and having at least one portion extending on top of the lower surface of the body; forming a protective layer covering the through contact region; and forming a connection structure extending on top of the upper surface of the body between and in electrical contact with the through contact region and the electronic component.

摘要翻译： 该方法包括以下步骤：从半导体材料体的背面形成通孔; 形成横向覆盖所述通孔的壁的电隔离材料的孔绝缘层; 形成导电材料的穿透接触区域，横向覆盖所述孔内的所述孔绝缘层，并且具有至少一部分延伸到所述主体的下表面的顶部; 形成覆盖所述贯通接触区域的保护层; 以及形成连接结构，所述连接结构在所述主体的上表面的顶部延伸并与所述贯穿接触区域和所述电子部件电接触。