摘要:
A production method for an endless track bushing wherein high-carbon low-alloy steel is selected as a bushing material, the bushing material is quench-hardened without pre-carburizing the bushing material, and then tempered. In the quench-hardening, the bushing material is induction-heated from an outside surface of the bushing material only so that an inside surface of the bushing material is heated to a temperature above and close to a transformation temperature of the high-carbon low-alloy steel, and then the heated bushing material is cooled from the outside surface of the bushing material only so that a residual compressive stress is produced at the inside surface of the bushing material when it has been cooled to an ambient temperature. The thus produced bushing has a high hardness throughout the entire cross section and a high toughness.
摘要:
Stable facsimile communications and reduced deterioration in image quality are achieved, when standard facsimile apparatuses communicate using a communication network composed a subnetwork with relatively good transmission quality such as a wire system and a subnetwork with relatively bad transmission quality such a mobile system subnetwork, both subnetworks being interspersed between the facsimile apparatuses, by inserting a pair of FAX signal converting apparatuses into the communication channel between the facsimile apparatuses for error control responsive to the quality of the channel in use.
摘要:
An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed.
摘要:
A semiconductor integrated circuit device is provided to include a vertical type MOSFET and a gate protection element for the MOSFET. The vertical type MOSFET is made up of a silicon layer of n-type conductivity formed on an n.sup.+ -type silicon substrate, a base region of p-type conductivity formed in the surface of the silicon layer of n-type conductivity, an n.sup.+ -type source region provided in the base region, and a gate electrode formed on a portion of the base region through a gate insulating film. The silicon substrate serves as the drain. The gate protection element is formed of a polycrystalline silicon layer which is provided on the base region through an insulating film and includes at least one pn junction. By virtue of forming the gate protection element over the base region rather than directly over the substrate, a more stable operation is achieved.
摘要:
Speed control apparatus for DC motor comprising a current mirror circuit including a first transistor 11 and second transistors 12-14 with their bases connected in common, the collectors of the second transistors 12-14 being in-common connected to one end of the DC motor 9 so as to control the motor current, the bases of the transistors being fed with such base current that saturates the transistors, thereby to raise their maximum controlling torque and starting torque of the DC motor.
摘要:
A photoresist composition containing a resin that is hardly soluble or insoluble, but which is soluble in an aqueous alkali solution by action of an acid, and a salt represented by formula (I): wherein Q1, Q2, L1, W1, W2, R1, R2, t1 and t2 are defined in the specification, and Z+ represents an organic cation.
摘要:
A salt represented by the formula (a): wherein Q1 and Q2 each independently represent a fluorine atom etc., X1 represents a single bond etc., X2 represents a single bond etc., Y1 represents a C3-C6 alicyclic hydrocarbon group etc., with the proviso that —X2—Y1 group has one or more fluorine atoms, and Z+ represents an organic counter cation, and a photoresist composition comprising the salt represented by the formula (a) and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.
摘要:
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要:
The object of the present invention is to provide a chemically amplified resist composition excellent in a resolution and a mask error enhancement factor.By employing the salt represented by the formulae (A1) as an acid generator of a resist composition, the above mentioned object is achieved. wherein Z+ represents an organic cation, Q1 and Q2 each independently represent a fluorine atom or a perfluoroalkyl group, Ra2 represents a divalent alicyclic hydrocarbon group pr the like, Ra2 represents an elimination group represented by the formulae (II-1) or (II-2). In the formulae (II-1) or (II-2), Ra3 and Ra4 each independently represent a hydrogen atom or an aliphatic hydrocarbon group, Ra5 represents an aliphatic hydrocarbon group, Ra6 represents a divalent aliphatic hydrocarbon group, and Ra7 represents an aliphatic hydrocarbon group.