公开(公告)号：US20150212403A1

公开(公告)日：2015-07-30

申请号：US14377941

申请日：2012-10-26

Applicant: S&S Tech Co., Ltd.

Inventor： Kee-Soo Nam ,  Geung-Won Kang ,  Jong-Hwa Lee ,  Chul-Kyu Yang ,  Soon-Gi Kwon

IPC: G03F1/26 ,  G03F1/80 ,  G03F1/76

CPC classification number: G03F1/26 ,  G03F1/32 ,  G03F1/50 ,  G03F1/76 ,  G03F1/80

Abstract: Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.

Abstract translation: 提供一种制造光掩模的方法，其中使用硬掩模膜图案作为蚀刻掩模，用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该掩模的光掩模。 在该方法中，用于图形化硬掩模膜的抗蚀剂膜可以形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。 因此，由于使用遮光膜图案，光密度可以维持在3.0，从而提高图案的分辨率和精度，降低负载效果，并且改善关键尺寸（CD）特征，例如CD均匀性 和CD线性。

公开(公告)号：US20150168825A1

公开(公告)日：2015-06-18

申请号：US14571385

申请日：2014-12-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naomi Shida ,  Kenji Todori ,  Shigehiko Mori ,  Reiko Yoshimura ,  Hiroyuki Kashiwagi ,  Ikuo Yoneda ,  Tsukasa Tada

IPC: G03F1/76 ,  G03F1/80

CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/80 ,  G03F7/16 ,  G03F7/20 ,  G03F7/201 ,  G03F7/40 ,  G03F7/7035 ,  H01L21/3065 ,  H01L21/3086

Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。

公开(公告)号：US20150072270A1

公开(公告)日：2015-03-12

申请号：US14019809

申请日：2013-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Yu ,  Ming-Yun Chen

IPC: G03F1/72 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/72 ,  G03F1/76 ,  G03F1/80

Abstract: Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

Abstract translation: EUV掩模的反射多层涂层或吸收层中的任何缺陷在将EUV掩模的图案转印到晶片上是有问题的，因为它们在晶片上产生集成电路图案的错误。 在这方面，根据本公开的各种实施例提供了制造EUV掩模的方法。 为了修复缺陷，根据各种实施例沉积充当布拉格反射器的柱状反射体，以局部补偿和修复缺陷。 根据本公开的实施例，可以补偿由于缺陷引起的反射损耗，并且恢复由于缺陷而导致的相位不同，从而形成期望的晶片印刷图像。

公开(公告)号：US08962222B2

公开(公告)日：2015-02-24

申请号：US13495291

申请日：2012-06-13

Applicant: Hsin-Chang Lee ,  Pei-Cheng Hsu ,  Chia-Jen Chen ,  Anthony Yen

Inventor： Hsin-Chang Lee ,  Pei-Cheng Hsu ,  Chia-Jen Chen ,  Anthony Yen

IPC: G03F1/00 ,  G03F1/44 ,  G03F1/24 ,  G03F1/68 ,  G03F1/76

CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/38 ,  G03F1/44 ,  G03F1/50 ,  G03F1/68 ,  G03F1/70 ,  G06F17/5068

Abstract: A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code.

Abstract translation: 公开了一种具有机读识别标记并适于制造集成电路器件的光掩模和用于形成光掩模和识别标记的方法。 示例性实施例包括接收与在光掩模坯件上形成的图案相对应的设计布局。 识别码的规格也与包括基底，反射层和吸收层的光掩模坯料一起被接收。 使用设计布局进行第一图案化。 使用识别码的说明来执行第二图案化。

公开(公告)号：US20150004790A1

公开(公告)日：2015-01-01

申请号：US14371293

申请日：2013-01-31

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yohei Murayama ,  Toshiki Ito ,  Chieko Mihara ,  Motoki Okinaka

IPC: H01L21/027 ,  G03F1/76 ,  H01L21/308

CPC classification number: H01L21/0274 ,  B29C33/62 ,  B29C39/026 ,  B29C2035/0827 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  G03F1/76 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/027 ,  H01L21/3081

Abstract: It is intended to provide a photocured product that is prepared using the photo-imprint method and has favorable pattern precision and improvement in pattern defects. The present invention provides a photocured product obtained by irradiating a coating film in contact with a mold with light, the photocured product containing a fluorine atom-containing surfactant, wherein of secondary ion signals obtained by the surface analysis of the photocured product based on time-of-flight secondary ion mass spectrometry, the intensity of a C2H5O+ ion signal is higher than that of a C3H7O+ ion signal.

Abstract translation: 旨在提供使用光印方法制备的光固化产品，并且具有良好的图案精度和图案缺陷的改进。 本发明提供一种通过用光照射与模具接触的涂膜而获得的光固化产物，所述光固化产物含有含氟原子的表面活性剂，其中通过基于时间依赖性的光固化产物的表面分析获得的二次离子信号， 飞行时间二次离子质谱法，C2H5O +离子信号的强度高于C3H7O +离子信号强度。

公开(公告)号：US08916482B2

公开(公告)日：2014-12-23

申请号：US13437075

申请日：2012-04-02

Applicant: Hsin-Chang Lee ,  Yun-Yue Lin ,  Hung-Chang Hsieh ,  Chia-Jen Chen ,  Yih-Chen Su ,  Ta-Cheng Lien ,  Anthony Yen

Inventor： Hsin-Chang Lee ,  Yun-Yue Lin ,  Hung-Chang Hsieh ,  Chia-Jen Chen ,  Yih-Chen Su ,  Ta-Cheng Lien ,  Anthony Yen

IPC: H01L21/31

CPC classification number: G03F1/76

Abstract: A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.

Abstract translation: 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。

公开(公告)号：US20140272683A1

公开(公告)日：2014-09-18

申请号：US14052060

申请日：2013-10-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Anthony Yen ,  Chih-Tsung Shih ,  Ming-Jiun Yao ,  Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Hsin-Chang Lee

IPC: G03F1/76

CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/54 ,  G03F7/0043

Abstract: A method for fabricating an extreme ultraviolet (EUV) mask includes providing a low thermal expansion material (LTEM) layer. A reflective multiple-layer (ML) is deposited over the LTEM layer. A flowable-photosensitive-absorption-layer (FPhAL) is spin coated over the reflective ML. The FPhAL is patterned by a lithography process to form a patterned absorption layer.

Abstract translation: 制造极紫外（EUV）掩模的方法包括提供低热膨胀材料（LTEM）层。 反射多层（ML）沉积在LTEM层上。 将可流动光敏吸收层（FPhAL）旋涂在反射ML上。 FPhAL通过光刻工艺图案化以形成图案化的吸收层。

公开(公告)号：US08802333B2

公开(公告)日：2014-08-12

申请号：US13421113

申请日：2012-03-15

Applicant: Chien-Hsuan Liu ,  Jen-Pan Wang

Inventor： Chien-Hsuan Liu ,  Jen-Pan Wang

IPC: G03F1/00

CPC classification number: G03F1/52 ,  G03F1/24 ,  G03F1/50 ,  G03F1/76 ,  G03F7/70058 ,  G03F7/70283 ,  G03F7/703

Abstract: Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.

Abstract translation: 公开了各种非平面反射光刻掩模，使用这种光刻掩模的系统和方法。 一个实施例是包括透明基板，反射材料和掩模版图案的光刻掩模。 透明基板包括弯曲表面。 反射材料与透明基板的弯曲表面相邻，并且反射材料和透明基板之间的界面是反射表面。 标线图案位于透明基板的第二表面上。 标线图案的反射率小于反射材料的反射率。 公开了形成类似光刻掩模和使用类似光刻掩模的方法。

公开(公告)号：US20140217646A1

公开(公告)日：2014-08-07

申请号：US14021489

申请日：2013-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Doh-Hyoung LEE ,  Jun Ho JO

IPC: G03F7/20

CPC classification number: G03F1/76 ,  B23K26/067 ,  G03F7/2053 ,  G03F7/70383 ,  G03F7/70875

Abstract: A mask manufacturing apparatus includes a laser irradiator, a stage, a frame, and a heat spreader sheet. The laser irradiator divides a laser beam into a plurality of sub-laser beams and irradiates the sub-laser beams to a shadow mask material which is placed over a stage. The frame is disposed over the stage to support the shadow mask material. The heat spreader sheet makes contact with the shadow mask material, absorbs heat generated from the shadow mask material, and dissipates the heat to surroundings of the shadow mask material. Accordingly, the shadow mask material is protected from overheating.

Abstract translation: 掩模制造装置包括激光照射器，台架，框架和散热片。 激光照射器将激光束分割成多个子激光束，并将副激光束照射到放置在台上的荫罩材料。 框架设置在舞台上以支撑荫罩材料。 散热片与荫罩材料接触，吸收由荫罩材料产生的热量，并将热量散发到荫罩材料的周围。 因此，防止荫罩材料过热。

公开(公告)号：US20140212793A1

公开(公告)日：2014-07-31

申请号：US13967339

申请日：2013-08-14

Applicant: Mentor Graphics Corporation

Inventor： Emile Y. Sahouria

IPC: G03F1/76

CPC classification number: G03F1/76

Abstract: Mask writing techniques that employ multiple masking writing passes. A first writing pass is made to write a first shot pattern having a first resolution. A second writing pass is then made to write a second shot pattern having a second resolution finer than the first resolution, such that the second shot pattern substantially overlaps with the first shot pattern on the mask substrate.

Abstract translation: 使用多重掩蔽写作通行的掩码写入技术。 进行第一写入通道以写入具有第一分辨率的第一拍摄图案。 然后进行第二写入通道以写入具有比第一分辨率更精细的第二分辨率的第二拍摄图案，使得第二拍摄图案基本上与掩模基板上的第一拍摄图案重叠。