Pattern Drawing Apparatus and Pattern Drawing Method

    公开(公告)号:US20170343907A1

    公开(公告)日:2017-11-30

    申请号:US15231842

    申请日:2016-08-09

    发明人: Eriko NAKAJIMA

    IPC分类号: G03F9/00 G03F7/20

    摘要: A pattern drawing apparatus includes a first image-pickup device for reading an alignment mark and reading a first pattern image for detecting a positional shift, a second image-pickup device for reading the first pattern image and reading a second pattern image for detecting a positional shift drawn by an irradiation light beam from the optical head while carrying out a relative movement between the table and the optical head, and a positional shift detection unit for obtaining a first coordinate difference between a center of a visual field of the first image-pickup device and a center of the first pattern based on a read image by the first image-pickup device and obtaining a second coordinate difference between the center of the first pattern and a specific position of the second pattern based on a read image by the second image-pickup device.

    MASK BLANK, PHASE-SHIFT MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    88.
    发明申请
    MASK BLANK, PHASE-SHIFT MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    掩模层,相位移掩模和制造半导体器件的方法

    公开(公告)号:US20160377975A1

    公开(公告)日:2016-12-29

    申请号:US15121124

    申请日:2014-12-09

    申请人: HOYA CORPORATION

    IPC分类号: G03F1/32 G03F7/20

    CPC分类号: G03F1/32 G03F1/58 G03F7/2053

    摘要: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1, the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: CN≦9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084  Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

    摘要翻译: 提供:在将过渡金属硅化物材料用于遮光膜的情况下,具有较薄的遮光膜的相移掩模,同时解决了ArF耐光性的问题; 以及用于制造该相移掩模的掩模坯料。 一种在透光基板(1)上具有相移膜(2)和遮光膜(4)的掩模板(10),其中相移膜(2)由具有ArF耐光性的材料形成 并且至少一层遮光膜(4)由含有过渡金属,硅和氮的材料形成,并满足下面的式(1)的条件。 CN≤9.0×10-6×RM 4 - 1.65×10-4×RM 3 - 7.718×10-2×RM 2 + 3.611×RM - 21.084式(1)在这一点上,RM表示过渡金属 含量相对于上述一层中的过渡金属含量和硅含量的总和,CN表示上述一层中的氮含量。