公开(公告)号：US20160258809A1

公开(公告)日：2016-09-08

申请号：US15062418

申请日：2016-03-07

Applicant: The University of Chicago

Inventor： Philippe Guyot-Sionnest ,  Sean E. Keuleyan ,  Emmanuel Lhuillier

IPC: G01J1/42 ,  H01L31/0272 ,  H01L31/032 ,  H01L31/0352

CPC classification number: H01L31/0296 ,  C09K11/89 ,  G01J1/4228 ,  H01L27/146 ,  H01L31/0272 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/09 ,  H01L31/1828

Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

Abstract translation: 本文提供纳米颗粒，制造方法，包含纳米颗粒的装置，其制造方法及其使用方法。 具有1.7μm至12μm范围内的光吸收的纳米颗粒和器件可用作光电导体，光电二极管，光电晶体管，电荷耦合器件（CCD），发光探针，激光器，热成像仪，夜视系统和/或 光电探测器

公开(公告)号：US09437762B2

公开(公告)日：2016-09-06

申请号：US14448756

申请日：2014-07-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Salman Akram

IPC: H01L27/148 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L27/14607 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/1804

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract translation: 用于图像传感器的升高的光电传感器和形成光电传感器的方法。 光传感器可以具有具有凹陷特征的光传感器，包括但不限于v形，u形或其它成形特征。 具有这种压痕特征的光传感器可以将不被光电传感器的一部分吸收的入射光重定向到光传感器的另一部分以便额外吸收。 此外，升高的光电传感器减小像素单元的尺寸，同时减少泄漏，图像滞后和屏障问题。

公开(公告)号：US09426390B2

公开(公告)日：2016-08-23

申请号：US12717609

申请日：2010-03-04

Applicant: Boyd Fowler

Inventor： Boyd Fowler

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H04N5/335 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/357 ,  H04N5/3597 ,  H04N5/3745

Abstract: A pixel cell and imaging arrays using the same are disclosed. The pixel cell includes a photodiode that is connected to a floating diffusion node by a transfer gate that couples the photodiode to the floating diffusion node in response to a first gate signal. A shielding electrode shields the floating diffusion node from the first gate signal. An output stage generates a signal related to a charge on the floating diffusion node. In one aspect of the invention, the photodiode is connected to the floating diffusion node by a buried channel, and the shielding electrode includes an electrode overlying the channel and positioned between the transfer gate and the floating diffusion node. The shielding electrode is held at a potential that prevents charge from accumulating under the shielding electrode when the floating diffusion is at the second potential.

Abstract translation: 公开了使用其的像素单元和成像阵列。 像素单元包括光电二极管，其通过传输门连接到浮动扩散节点，所述传输栅极响应于第一栅极信号将光电二极管耦合到浮动扩散节点。 屏蔽电极屏蔽浮动扩散节点与第一门信号。 输出级产生与浮动扩散节点上的电荷相关的信号。 在本发明的一个方面中，光电二极管通过掩埋沟道连接到浮动扩散节点，并且屏蔽电极包括覆盖沟道并位于传输栅极和浮动扩散节点之间的电极。 当浮动扩散处于第二电位时，屏蔽电极被保持在防止电荷积聚在屏蔽电极下方的电位。

公开(公告)号：US09406716B2

公开(公告)日：2016-08-02

申请号：US14876296

申请日：2015-10-06

Applicant: OmniVision Technologies, Inc.

Inventor： Wei-Feng Lin ,  Yeh-An Chien ,  Chun-Sheng Fan

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/146 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14669 ,  H01L2224/11

Abstract: An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor.

公开(公告)号：US09377363B2

公开(公告)日：2016-06-28

申请号：US14294090

申请日：2014-06-02

Applicant: FLIR Systems, Inc.

Inventor： Pierre Boulanger ,  Marcel Tremblay ,  Jim Goodland ,  Barbara Sharp ,  Farhad Mirbod ,  Theodore R. Hoelter

IPC: G01J5/10 ,  G01J5/04 ,  H04N5/225 ,  H04N5/33 ,  G01J5/02 ,  G01J5/20 ,  G01J1/02 ,  G01J1/44 ,  H01L27/146 ,  G01J5/00

CPC classification number: G01J5/20 ,  G01J1/0204 ,  G01J1/44 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/023 ,  G01J5/046 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/204 ,  H01L22/14 ,  H01L22/32 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14669 ,  H01L27/14687 ,  H01L27/14698 ,  H01L37/02 ,  H04N5/2251 ,  H04N5/33 ,  Y10T29/49826

Abstract: An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.

Abstract translation: 对于一个实施例，红外线照相机结构包括红外检测器，衬底，耦合到衬底的多个电气部件，以及由导热材料制成并具有连接到衬底的腿部的基座。 红外检测器由支架支撑并热耦合到基座，基座将红外检测器与多个电气部件热隔离。

公开(公告)号：US20160170044A1

公开(公告)日：2016-06-16

申请号：US15050894

申请日：2016-02-23

Applicant: American Science and Engineering, Inc.

Inventor： Anatoli Arodzero ,  Joseph Callerame ,  Dan-Christian Dinca ,  Rajen Sud ,  Lee Grodzins ,  Martin Rommel ,  Peter Rothschild ,  Jeffrey Schubert

IPC: G01T1/20

CPC classification number: G01T1/2018 ,  G01T1/20 ,  G01T1/2006 ,  G01T1/2008 ,  G01T3/06 ,  G01T5/08 ,  G01T7/00 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14658

Abstract: Methods for discriminating among x-ray beams of distinct energy content. A first volume of scintillation medium converts energy of incident penetrating radiation into scintillation light which is extracted from a scintillation light extraction region by a plurality of optical waveguides that convert the scintillation light to light of a longer wavelength. An x-ray beam initially incident upon the first volume of scintillation medium and traversing the first volume is then incident on a second volume of scintillation medium. The first and second scintillation media may be separated by an absorber or one or more further volumes of scintillation medium, and may also have differential spectral sensitivities. Scintillation light from the first and second scintillation volumes is detected in respective detectors and processed to yield a measure of respective low energy and high-energy components of the incident x-ray beam.

Abstract translation: 用于区分不同能量含量的x射线束的方法。 闪烁介质的第一体积将入射穿透辐射的能量转换成通过将闪烁光转换为较长波长的光的多个光波导从闪烁光提取区域提取的闪烁光。 最初入射到第一体积的闪烁介质并穿过第一体积的X射线束然后入射到第二体积的闪烁介质上。 第一和第二闪烁介质可以由吸收器或一个或多个另外的体积的闪烁介质分离，并且还可以具有差的光谱灵敏度。 在相应的检测器中检测来自第一和第二闪烁体积的闪烁光，并对其进行处理以产生入射的X射线束的各自的低能量和高能量分量的量度。

公开(公告)号：US09337235B2

公开(公告)日：2016-05-10

申请号：US14588815

申请日：2015-01-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Szu-Ying Chen ,  Meng-Hsun Wan ,  Dun-Nian Yaung ,  Pao-Tung Chen ,  Jen-Cheng Liu

IPC: H01L21/311 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18 ,  H01L2924/381

Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

公开(公告)号：US20160126285A1

公开(公告)日：2016-05-05

申请号：US14992234

申请日：2016-01-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masahiro Kobayashi ,  Mineo Shimotsusa

IPC: H01L27/146 ,  H01L27/02

CPC classification number: H01L27/14689 ,  H01L27/0255 ,  H01L27/0296 ,  H01L27/146 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/288

Abstract: A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.

公开(公告)号：US09318640B2

公开(公告)日：2016-04-19

申请号：US13935755

申请日：2013-07-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

IPC: H01L27/00 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/146 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/1469 ,  H01L31/18

Abstract: A device having a sensor die with a sensor and a control circuit die with at least one control circuit disposed therein, the control circuit die on the sensor die. A plurality of mounting pads is disposed on a second side of the sensor die. A first electrical connection connects a first one of the plurality of mounting pads to a first control circuit of the at least one sensor control circuit and a second electrical connection connects the first control circuit to the sensor. A third electrical connection connects the sensor to a second control circuit of the at least one control circuit and a fourth electrical connection connects the second control circuit to second one of the plurality of mounting pads.

Abstract translation: 具有传感器的传感器管芯的设备和设置有至少一个控制电路的控制电路管芯，控制电路在传感器管芯上进行管芯。 多个安装垫设置在传感器管芯的第二侧上。 第一电连接将多个安装焊盘中的第一个连接到至少一个传感器控制电路的第一控制电路，并且第二电连接将第一控制电路连接到传感器。 第三电连接将传感器连接到至少一个控制电路的第二控制电路，并且第四电连接将第二控制电路连接到多个安装焊盘中的第二控制电路。

公开(公告)号：US09305946B2

公开(公告)日：2016-04-05

申请号：US13753182

申请日：2013-01-29

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tatsuya Ryoki ,  Kazuki Ohshitanai

IPC: H01L27/146 ,  H04N5/347 ,  H04N5/345 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/146 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378 ,  H04N9/04511

Abstract: A photoelectric conversion apparatus includes a plurality of pixels arranged in a matrix, a plurality of signal processing units each corresponding to a column of the matrix, and a signal line. Each of the plurality of signal processing units includes a first capacitance and a second capacitance that hold a signal, a switch provided between the signal line and the first capacitance, a capacitance adjustment unit electrically connected to the second capacitance, and a connection unit configured to electrically connect the first capacitance provided to one of signal processing units to the second capacitance provided to another one of the signal processing units.

Abstract translation: 光电转换装置包括以矩阵形式排列的多个像素，多个信号处理单元，每个信号处理单元分别对应于矩阵的一列，以及信号线。 多个信号处理单元中的每一个包括保持信号的第一电容和第二电容，设置在信号线和第一电容之间的开关，电连接到第二电容的电容调整单元，以及连接单元， 将提供给信号处理单元之一的第一电容电连接到提供给另一个信号处理单元的第二电容。