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143 条记录 (耗时 0.02 秒)

    Transistor amplifier
    81.
    发明授权
    Transistor amplifier 失效
    晶体管放大器

    公开(公告)号：US3921089A

    公开(公告)日：1975-11-18

    申请号：US50883674

    申请日：1974-09-24

    申请人： SONY CORP

    发明人： TSURUSHIMA KATSUAKI

    IPC分类号： H03F1/30 ,  H03F3/20 ,  H03F3/30 ,  H03F3/16

    CPC分类号： H03F1/306 ,  H03F3/3044

    摘要： A transistor amplifier includes at least one field effect transistor with triode characteristics employed for amplifying purposes, particularly in an output stage, with the drain and source electrodes of each such transistor being connected, through a load, between terminals of an operating voltage source which is subject to fluctuations, and with an input signal being applied to the gate electrode of the field effect transistor having triode characteristics. In order to ensure that fluctuations in the voltage of the operating voltage source will not cause variations in the biasing DC drain current of the transistors with triode characteristics, and consequent distortions in the amplifier output, a biasing circuit is provided for applying a gate bias voltage to the gate electrode of each field effect transistor with triode characteristics, and the biasing circuit includes a compensating arrangement for varying such gate bias voltage in response to fluctuations of the operating voltage source with the ratio of a voltage fluctuation of such source to the resulting variation of the gate bias voltage preferably being substantially proportional to the amplification constant of the field effect transistor, whereby to stabilize the biasing DC drain current. The foregoing arrangement is particularly suited for transistor amplifiers in which the output stage is constituted by an amplifier of the push-pull type employing field effect transistors with triode characterisitcs, and in which variations in the biasing DC drain currents resulting from operating voltage fluctuations would cause crossover distortions.

    摘要翻译： 晶体管放大器包括具有用于放大目的的三极管特性的至少一个场效应晶体管，特别是在输出级中，每个这样的晶体管的漏极和源极通过负载在工作电压源的端子之间连接， 受到波动，并且输入信号被施加到具有三极管特性的场效应晶体管的栅电极。 为了确保工作电压源的电压的波动不会引起具有三极管特性的晶体管的偏置DC漏极电流的变化，以及放大器输出中的随后的失真，提供偏置电路以施加栅极偏置电压 到具有三极管特性的每个场效应晶体管的栅电极，并且偏置电路包括用于响应于工作电压源的波动而改变该栅极偏置电压的补偿装置，其中该源的电压波动与所得变化的比率 栅极偏置电压优选地基本上与场效应晶体管的放大常数成比例，由此稳定偏置DC漏极电流。 上述布置特别适用于晶体管放大器，其中输出级由采用具有三极管特性的场效应晶体管的推挽型放大器构成，其中由工作电压波动导致的偏置DC漏极电流的变化将导致 交叉扭曲。

    Bias circuits and methods for depletion mode semiconductor devices
    84.
    发明授权
    Bias circuits and methods for depletion mode semiconductor devices 有权
    用于耗尽型半导体器件的偏置电路和方法

    公开(公告)号：US09595928B2

    公开(公告)日：2017-03-14

    申请号：US14812715

    申请日：2015-07-29

    申请人： CREE, INC.

    发明人： Bruce C. Schmukler

    IPC分类号： H03F3/04 ,  H03F3/193 ,  H03F1/02 ,  H03F3/21 ,  H03F3/45

    CPC分类号： H03F3/193 ,  H03F1/0205 ,  H03F1/0261 ,  H03F1/306 ,  H03F3/1935 ,  H03F3/21 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/451 ,  H03F2203/45154

    摘要： A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.

    摘要翻译： 射频（RF）放大器包括具有栅极的耗尽型半导体器件，偏置器件和反相电路。 耗尽型半导体器件可以是HEMT和/或MESFET。 偏置装置被配置为产生偏置电压。 反相电路被配置为从偏置电压产生反向偏置电压，并将反相偏置电压施加到栅极。 描述相关电路和方法。

    BIAS CIRCUITS AND METHODS FOR DEPLETION MODE SEMICONDUCTOR DEVICES
    85.
    发明申请
    BIAS CIRCUITS AND METHODS FOR DEPLETION MODE SEMICONDUCTOR DEVICES 有权
    偏置电路和偏移模式半导体器件的方法

    公开(公告)号：US20170033749A1

    公开(公告)日：2017-02-02

    申请号：US14812715

    申请日：2015-07-29

    申请人： CREE, INC.

    发明人： Bruce C. SCHMUKLER

    IPC分类号： H03F3/193 ,  H03F3/21 ,  H03F3/45 ,  H03F1/02

    CPC分类号： H03F3/193 ,  H03F1/0205 ,  H03F1/0261 ,  H03F1/306 ,  H03F3/1935 ,  H03F3/21 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/451 ,  H03F2203/45154

    摘要： A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.

    摘要翻译： 射频（RF）放大器包括具有栅极的耗尽型半导体器件，偏置器件和反相电路。 耗尽型半导体器件可以是HEMT和/或MESFET。 偏置装置被配置为产生偏置电压。 反相电路被配置为从偏置电压产生反向偏置电压，并将反相偏置电压施加到栅极。 描述相关电路和方法。

    AMPLIFICATION DEVICE AND AMPLIFICATION METHOD
    87.
    发明申请
    AMPLIFICATION DEVICE AND AMPLIFICATION METHOD 有权
    放大器件和放大方法

    公开(公告)号：US20130207726A1

    公开(公告)日：2013-08-15

    申请号：US13716130

    申请日：2012-12-15

    申请人： Fujitsu Limited

    发明人： Tsuneaki TADANO

    IPC分类号： H03F3/68 ,  H03F3/19 ,  H03F3/04

    CPC分类号： H03F3/68 ,  H03F1/0288 ,  H03F1/306 ,  H03F3/04 ,  H03F3/19 ,  H03F3/245 ,  H03F2200/15 ,  H03F2200/18

    摘要： In an amplification device, an amplification unit has a transistor and amplifies a signal that is input. A control unit applies, when a power source is turned on, a pinch-off voltage to a gate of the transistor before applying a drain bias voltage to a drain of the transistor and then applies a gate bias voltage to the gate of the transistor.

    摘要翻译： 在放大装置中，放大单元具有晶体管并放大输入的信号。 当在晶体管的漏极施加漏极偏置电压之前，控制单元在电源接通时施加针对晶体管的栅极的钳位电压，然后将栅极偏置电压施加到晶体管的栅极。

    SELF-ADJUSTING GATE BIAS NETWORK FOR FIELD EFFECT TRANSISTORS
    88.
    发明申请
    SELF-ADJUSTING GATE BIAS NETWORK FOR FIELD EFFECT TRANSISTORS 有权
    自适应栅极偏置网络的场效应晶体管

    公开(公告)号：US20110181324A1

    公开(公告)日：2011-07-28

    申请号：US13063314

    申请日：2008-09-15

    申请人： Roland Gesche ,  Ibrahim M. Khalil ,  Silvio Kuehn ,  Armin Liero

    发明人： Roland Gesche ,  Ibrahim M. Khalil ,  Silvio Kuehn ,  Armin Liero

    IPC分类号： H03K17/00

    CPC分类号： H03F1/301 ,  H01L27/0255 ,  H03F1/306 ,  H03F1/3205 ,  H03F1/523 ,  H03F3/193 ,  H03F3/1935 ,  H03F2200/18 ,  H03F2200/444

    摘要： The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.

    摘要翻译： 本发明涉及用于射频应用中的场效应晶体管的自调节栅极偏置网络。 提供了一种用于场效应晶体管的偏置网络，其包括具有连接到地的源极电极和连接到负载的漏电极的场效应晶体管; 连接到栅电极的射频网络; 连接到栅电极的栅偏置网; 其中具有非线性特性的器件串联地提供在栅电极和栅极偏压网络之间，使得场效应晶体管的栅电极处的正向偏置电流被减小或防止。 正向偏置电流的减少或防止导致过驱动条件下对场效应晶体管的偏置点进行自调节，从而改善了放大器失真的减小或者改变连接到栅电极的振荡器的类别。

    Bias network
    89.
    发明授权
    Bias network 有权
    偏差网络

    公开(公告)号：US07852136B2

    公开(公告)日：2010-12-14

    申请号：US12189888

    申请日：2008-08-12

    申请人： John P. Bettencourt

    发明人： John P. Bettencourt

    IPC分类号： H03K17/687

    CPC分类号： H03F1/306 ,  H03F3/1935

    摘要： A network having a current mirror comprising: a output transistor having a gate electrode for controlling a first current between a first electrode and a second electrode, the first electrode being coupled to a positive reference potential and the second electrode being connected to ground. A second transistor has a gate electrode for controlling a second current between a first electrode and a second electrode of the second transistor. The gate electrodes are connected together to produce the first current and the second current with equal current densities. A first portion of current from a current source is fed to the first electrode of the second transistor and a second portion of current from the current source is fed to a bias voltage producing circuit producing a bias voltage at the gate electrode of the output transistor for tracking variations in the first current passing through the output transistor.

    摘要翻译： 一种具有电流镜的网络，包括：输出晶体管，具有用于控制第一电极和第二电极之间的第一电流的栅电极，第一电极耦合到正参考电位，第二电极连接到地。 第二晶体管具有用于控制第二晶体管的第一电极和第二电极之间的第二电流的栅电极。 栅电极连接在一起以产生具有相等电流密度的第一电流和第二电流。 来自电流源的电流的第一部分被馈送到第二晶体管的第一电极，并且来自电流源的电流的第二部分被馈送到偏置电压产生电路，在输出晶体管的栅电极处产生偏置电压， 跟踪通过输出晶体管的第一电流的变化。