摘要:
An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.
摘要:
The present invention pertains to radiation sources that mimic radiation environment(s) encountered by packaged semiconductor devices. The sources are suitable for use in test systems operative to test for soft error and/or failure rates in devices sensitive to such radiation. The radiation is highly active to exacerbate soft error rates and thereby accelerate testing and reduce test times. The sources are also relatively uniformly distributed within a medium to simulate the direction(s) and energy spectra of radiation that would actually be encountered by semiconductor devices in device operation.
摘要:
Precision measurement of optical signal power is provided. In one implementation, a Wilson current mirror senses current through an avalanche photodiode (APD) that has been exposed to the optical signal. The output of this APD may also be used to recover data. By incorporating a high voltage transistor as the buffer, the Wilson current mirror is able to operate in series with the APD at a high bias level.
摘要:
In a nondestructive and noncontact analysis system for analyzing and evaluating an object, a light beam generation/modulation apparatus emits a modulated and focused light beam to thereby irradiate the object, and the modulation of the modulated and focused light beam is carried out with a modulation signal synchronized with a reference signal composed of a series of regular pulses. A magnetism detection apparatus detects a magnetic field, which is generated by an electric current induced by irradiating the object with the modulated and focused light beam, to thereby produce a magnetic field signal. A signal extraction circuit extracts a phase difference signal between the reference signal and the magnetic field signal. An image data production system produces phase difference image data based on the phase difference signal.
摘要:
A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
摘要:
An apparatus for measuring an electrical property of a semiconductor wafer includes a probe having an electrically conductive tip formed at least in part of a material that is transparent to light and a probe guard disposed adjacent the electrically conductive tip. The apparatus includes a device for selectively applying a first electrical stimulus between a semiconductor wafer and the electrically conductive tip of each probe when it is positioned in spaced relation to the semiconducting material forming the semiconductor wafer, and a device for selectively applying a second electrical stimulus between the semiconductor wafer and the probe guard of each probe. A device for measuring a response of the semiconductor wafer to the electrical stimuli and for determining from the response at least one electrical property thereof is provided. A light source can be positioned to selectively emit light through the transparent material toward the semiconductor wafer.
摘要:
A sidewall or other feature in a semiconductor wafer is evaluated by illuminating the wafer with at least one beam of electromagnetic radiation, and measuring intensity of a portion of the beam reflected by the wafer. Change in reflectance between measurements provides a measure of a property of the feature. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment. A single beam may be used if it is polarized in a direction substantially perpendicular to a longitudinal direction of the sidewall. A portion of the energy of the beam is absorbed by the sidewall, thereby to cause a decrease in reflectance when compared to reflectance by a flat region. Alternatively, two beams may be used, of which a first beam applies heat to the feature itself or to a region adjacent to the feature, and a second beam is used to measure an increase in reflectance caused by an elevation in temperature due to heat transfer through the feature. The elevation in temperature that is measured can be either of the feature itself, or of a region adjacent to the feature.
摘要:
Analysis of a semiconductor die is enhanced by the stimulation the die and the detection of a response to the stimulation. According to an example embodiment of the present invention, a semiconductor die is analyzed using indirect stimulation of a portion of the die, and detecting a response therefrom. First, selected portion of circuitry within the die is stimulated. The stimulation of the selected portion induces a second portion of circuitry within the die to generate an external emission. The emission is detected and the die is analyzed therefrom. In one particular implementation, a response from the selected portion is inhibited from interfering with the detection of the emission from the second portion of circuitry.
摘要:
An inspection apparatus is provided capable of adequately positioning an inspection chip to a conductive pattern as an inspection object. For connecting an electrode pad 1b of an inspection chip 1 with a lead 2a of a package 2, bump electrodes 3 and 4 are first provided at the inspection chip and at the package, respectively. Then, an anisotropic conductor 5 is provided to cover between the bump electrodes 3 and 4, and a conductor film 6 is provided on the anisotropic conductor 5 to extend between the bump electrodes 3 and 4. The anisotropic conductor 5 is thermo-compression bonded to provide an electrical connection between the conductor film 6 and the bump electrodes 3 and 4. This structure may provide a desirable surface of the inspection chip 1 having a sufficiently reduced thickness.
摘要:
Improved methods and apparatus are provided for the handling and testing of semiconductor devices. One embodiment comprises a die carrier for one or more semiconductor dice having very fine pitch electrical I/O (input/output) elements. The semiconductor dice are temporarily attached to the die carrier in singulated form to enable testing the dice with conventional contact technology. The die carrier may include a flex circuit base substrate and a rigid support frame. Further embodiments comprise materials and methods for attaching the semiconductor dice to the die carrier and for providing a temporary electrical connection with the semiconductor dice during testing. Exemplary materials for providing the temporary electrical connection may comprise a conductive film or tape, a conductive or conductor-filled epoxy, resin or RTV adhesive-based materials, a water-soluble material impregnated with a conductive filler or non-reflowed solder paste.