公开(公告)号：US08178963B2

公开(公告)日：2012-05-15

申请号：US11648688

申请日：2007-01-03

Applicant: Wen-Kun Yang

Inventor： Wen-Kun Yang

IPC: H01L23/52

CPC classification number: H01L23/5389 ,  H01L21/6835 ,  H01L23/49827 ,  H01L24/24 ,  H01L24/82 ,  H01L2221/68345 ,  H01L2224/24227 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00

Abstract: The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die disposed within the die receiving through hole; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.

Abstract translation: 本发明公开了一种包装结构，包括：具有模具接收通孔的基板，连接通孔结构和第一接触垫; 设置在模具接收通孔内的模具; 形成在模具下方并填充在模具和模具的侧壁之间的间隙中的周围材料; 形成在所述管芯和所述基板上的电介质层; 形成在电介质层上并耦合到第一接触焊盘的再分布层（RDL）; 形成在RDL上的保护层; 以及第二接触焊盘，其形成在所述基板的下表面和所述连接通孔结构的下方。

公开(公告)号：US08058102B2

公开(公告)日：2011-11-15

申请号：US12615682

申请日：2009-11-10

Applicant: Diann-Fang Lin ,  Yu-Shan Hu

Inventor： Diann-Fang Lin ,  Yu-Shan Hu

IPC: H01L21/48

CPC classification number: H01L23/3107 ,  H01L23/3185 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/13 ,  H01L24/19 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/2518 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/30107

Abstract: The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes a dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material.

Abstract translation: 本发明公开了一种具有再分配层（RDL）和硅通孔（TSV）技术的半导体器件封装结构。 封装结构包括电子元件，该电子元件包括在电子元件的背面上的电介质层，穿过电子元件和电介质层的多个第一导电通孔以及伴随第一导电通孔的多个导电垫 在电子元件的有效表面上; 设置在电子元件附近的填充材料; 设置在电介质层和填充材料之上并连接到第一导电通孔的第一再分配层; 设置在电子元件的有源表面上的第一保护层，导电焊盘和填充材料; 以及设置在再分布层，电介质层和填充材料之上的第二保护层。

公开(公告)号：US20110180891A1

公开(公告)日：2011-07-28

申请号：US12869001

申请日：2010-08-26

Applicant: Diann-Fang Lin ,  Yu-Shan Hu

Inventor： Diann-Fang Lin ,  Yu-Shan Hu

IPC: H01L31/0232

CPC classification number: H01L23/49827 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/16195 ,  H01L2924/18165 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00

Abstract: The present invention provides a conductor package structure comprising an optical sensor element. A filling material is filled around the optical sensor element. At least one conductor element is formed through the filling material from top side to the back side for signal connection. A redistribution layer is formed on the at least one conductor element and coupled to die pad of the optical sensor element. A transparent material is formed on the redistribution layer.

Abstract translation: 本发明提供一种包括光学传感器元件的导体封装结构。 填充材料填充在光学传感器元件周围。 至少一个导体元件通过填充材料从顶侧到后面形成用于信号连接。 再分配层形成在至少一个导体元件上并且耦合到光学传感器元件的管芯焊盘。 在再分布层上形成透明材料。

公开(公告)号：US20110108977A1

公开(公告)日：2011-05-12

申请号：US12615682

申请日：2009-11-10

Applicant: Diann-Fang Lin ,  Yu-Shan Hu

Inventor： Diann-Fang Lin ,  Yu-Shan Hu

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L23/3107 ,  H01L23/3185 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/13 ,  H01L24/19 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/2518 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/30107

Abstract: The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes a dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material.

Abstract translation: 本发明公开了一种具有再分配层（RDL）和硅通孔（TSV）技术的半导体器件封装结构。 封装结构包括电子元件，该电子元件包括在电子元件的背面上的电介质层，穿过电子元件和电介质层的多个第一导电通孔以及伴随第一导电通孔的多个导电垫 在电子元件的有效表面上; 设置在电子元件附近的填充材料; 设置在电介质层和填充材料之上并连接到第一导电通孔的第一再分配层; 设置在电子元件的有源表面上的第一保护层，导电焊盘和填充材料; 以及设置在再分布层，电介质层和填充材料之上的第二保护层。

公开(公告)号：US07812434B2

公开(公告)日：2010-10-12

申请号：US11648787

申请日：2007-01-03

Applicant: Wen-Kun Yang

Inventor： Wen-Kun Yang

IPC: H01L23/06

CPC classification number: H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/24155 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/15798 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00

Abstract: The present invention discloses a structure of package comprising: a substrate with a die receiving through hole; a base attached on a lower surface of the substrate; a die disposed within the die receiving through hole and attached on the base; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the die; a protection layer formed over the RDL; and pluralities of pads formed on the protection layer and coupled to the RDL. The RDL is made from an alloy comprising Ti/Cu/Au alloy or Ti/Cu/Ni/Au alloy.

Abstract translation: 本发明公开了一种包装体的结构，其特征在于，包括：具有模头的通孔的基板; 基底，其附接在所述基底的下表面上; 模具，设置在模具接收通孔内并附接在基座上; 形成在所述管芯和所述基板上的电介质层; 在所述电介质层上形成并耦合到所述管芯的再分布层（RDL）; 形成在RDL上的保护层; 以及形成在保护层上并耦合到RDL的多个焊盘。 RDL由包含Ti / Cu / Au合金或Ti / Cu / Ni / Au合金的合金制成。

公开(公告)号：US07655501B2

公开(公告)日：2010-02-02

申请号：US12141138

申请日：2008-06-18

Applicant: Wen-Kun Yang ,  Tung-Chuan Wang ,  Chao-Nan Chou ,  Chih-Wei Lin

Inventor： Wen-Kun Yang ,  Tung-Chuan Wang ,  Chao-Nan Chou ,  Chih-Wei Lin

IPC: H01L21/00

CPC classification number: H01L23/3128 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2224/82 ,  H01L2924/00

Abstract: The present invention provides a structure of package comprising a substrate with a pre-formed die receiving cavity formed and/or terminal contact metal pads formed within an upper surface of the substrate. A die is disposed within the die receiving cavity by adhesion and a dielectric layer formed on the die and the substrate. At least one re-distribution built up layer (RDL) is formed on the dielectric layer and coupled to the die via contact pad. Connecting structure, for example, UBM is formed over the re-distribution built up layer. Terminal Conductive bumps are coupled to the UBM.

Abstract translation: 本发明提供了一种包装结构，其包括具有预先形成的模具容纳空腔的基板和/或形成在基板的上表面内的端接触金属焊盘。 通过粘合将模具设置在模具接收腔内，并且在模具和基板上形成介电层。 在电介质层上形成至少一个重新分配建立层（RDL），并通过接触焊盘与芯片耦合。 连接结构，例如UBM形成在重新分配建立的层上。 端子导电凸块耦合到UBM。

公开(公告)号：US20100007017A1

公开(公告)日：2010-01-14

申请号：US12172431

申请日：2008-07-14

Applicant: Shih-Chuan Wei ,  Dyi-Chung Hu ,  Yu-Shan Hu

Inventor： Shih-Chuan Wei ,  Dyi-Chung Hu ,  Yu-Shan Hu

IPC: H01L23/488 ,  H01L21/58

CPC classification number: H01L23/5389 ,  H01L23/145 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/19 ,  H01L2223/54426 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00

Abstract: The present invention discloses an inter-connecting structure for a semiconductor package and a method for the same. The inter-connecting structure for the semiconductor package comprises a substrate formed to support a die thereon; core paste formed on the substrate and adjacent to the die; and a stiffener formed in an upper portion of the core paste, wherein the hardness of the stiffener is larger than the hardness of the core paste.

Abstract translation: 本发明公开了一种用于半导体封装的互连结构及其方法。 用于半导体封装的互连结构包括形成为在其上支撑裸片的衬底; 芯浆形成在基板上并与模具相邻; 以及形成在芯糊的上部的加强件，其中，加强件的硬度大于芯浆的硬度。

公开(公告)号：US07566854B2

公开(公告)日：2009-07-28

申请号：US11608254

申请日：2006-12-08

Applicant: Wen-Kun Yang ,  Jui-Hsien Chang

Inventor： Wen-Kun Yang ,  Jui-Hsien Chang

IPC: G01B9/02

CPC classification number: H01L27/14618 ,  H01L2224/48091 ,  H04N5/2251 ,  H04N5/2257 ,  H01L2924/00014

Abstract: The present invention provides an image sensor module. The image sensor module has a die formed on a substrate, the die having a micro lens area, a lens holder formed on the substrate and over the die, a lens formed in the lens holder. A filter is formed within the lens holder and between the lens and the die, and at least one passive device formed on the substrate and covered within the lens holder. Conductive bumps or LGA (leadless grid array) are formed on the bottom surface of the substrate.

Abstract translation: 本发明提供一种图像传感器模块。 图像传感器模块具有形成在基板上的模具，模具具有微透镜区域，形成在基板上并且在模具上的透镜保持器，形成在透镜保持器中的透镜。 滤镜形成在透镜保持器内并且在透镜和模具之间，以及形成在基板上并被覆盖在透镜保持器内的至少一个无源器件。 导电凸块或LGA（无引线栅格阵列）形成在基板的底表面上。

公开(公告)号：US07557437B2

公开(公告)日：2009-07-07

申请号：US11946424

申请日：2007-11-28

Applicant: Wen-Kun Yang ,  Wen-Pin Yang ,  Shih-Li Chen

Inventor： Wen-Kun Yang ,  Wen-Pin Yang ,  Shih-Li Chen

IPC: H01L23/02

CPC classification number: H01L21/561 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2224/82 ,  H01L2924/00

Abstract: To pick and place standard dice on a new base for obtaining an appropriate and wider distance between dice than the original distance of dice on a wafer. The package structure has a larger size of balls array than the size of the die by fan out type package. Moreover, the die may be packaged with passive components or other dice with a side by side structure or a stacking structure.

Abstract translation: 在新的基础上选择和放置标准骰子，以获得骰子之间适当和更宽的距离，而不是晶片上骰子的原始距离。 包装结构具有比通过扇出型包装的模具尺寸更大的球阵列尺寸。 此外，管芯可以与被动部件或其他具有并排结构或堆叠结构的管芯封装。

公开(公告)号：US20090166873A1

公开(公告)日：2009-07-02

申请号：US11965157

申请日：2007-12-27

Applicant: Wen-Kun Yang ,  Jui-Hsien Chang ,  Chi-Chen Lee ,  Mon-Chin Tsai

Inventor： Wen-Kun Yang ,  Jui-Hsien Chang ,  Chi-Chen Lee ,  Mon-Chin Tsai

IPC: H01L23/498 ,  H01L21/60

CPC classification number: H01L27/14618 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/24 ,  H01L24/29 ,  H01L24/82 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3512 ,  H01L2924/00

Abstract: The interconnecting structure for a semiconductor die includes a die having bonding pads on an active surface; a core attached the side wall (edge) of the die by adhesion material; an isolating base adhered on the active surface of the die by adhesion glue; a through silicon via (TSV) open from the back side of the die to expose the bonding pads; a build up layer coupled between the bonding pads to terminal metal pads by the through silicon via; solder balls melted on terminal pads, wherein the terminal pads located on the core and/or the die.

Abstract translation: 半导体管芯的互连结构包括：在有源表面上具有接合焊盘的管芯; 通过粘合材料将芯片的侧壁（边缘）附着在芯上; 通过粘合胶粘在模具的活性表面上的隔离基体; 从芯片的背面开口的通硅通孔（TSV）露出接合焊盘; 通过硅通孔将接合焊盘耦合到端子金属焊盘的堆积层; 焊球在端子焊盘上熔化，其中位于芯和/或模具上的端子焊盘。