摘要:
A method for producing a panel of a multi-layer electronic circuit package and resulting article of manufacture is provided comprising the steps of coating a circuitized core material that has been cut into panels with a dielectric material and copper cover sheets; forming circuits from the cover sheets by etching; applying an adhesive polymer across the dielectric material covering the entire area of the panel; applying a cover sheet; drilling the panel to form through-holes and vias; seeding and plating the through-holes and vias with joining metal; applying photo-resist to the panels exposed with an image of the area of the panel to be joined and developed; and etching the cover sheet and the photo-resist away in the area of the panel to be joined to expose the adhesive polymer.
摘要:
Reinforcement members are disposed along only the transverse edge regions of selected flexible cables of an integral chip carrier and cable assembly, and along only the respectively aligned end areas of the chip carrier portion of the assembly. The reinforcement members may be disposed along all of the flexible cables and end areas of the assembly, or on only selected cable and end area portions of the assembly. The reinforcement members are formed of a tough tear resistant polymer material, such as a hot melt adhesive or polymer tape or film.
摘要:
A method for producing a panel of a multi-layer electronic circuit package and resulting article of manufacture is provided comprising the steps of coating a circuitized core material that has been cut into panels with a dielectric material and copper cover sheets; forming circuits from the cover sheets by etching; applying an adhesive polymer across the dielectric material covering the entire area of the panel; applying a cover sheet; drilling the panel to form through-holes and vias; seeding and plating the through-holes and vias with joining metal; applying photo-resist to the panels exposed with an image of the area of the panel to be joined and developed; and etching the cover sheet and the photo-resist away in the area of the panel to be joined to expose the adhesive polymer.
摘要:
The present invention provides a method of ablative photodecomposition and forming metal pattern which attains high resolution, is convenient, and employs non-halogenated solvents. The present invention is directed to a process for forming a metal pattern, preferably circuitization on an organic substrate, preferably on a circuit board or component thereof, which comprises coating the substrate with an ablatively-removable coating comprising a polymer resin preferably an acrylate polymer resin and preferably an ultraviolet absorber. A pattern is formed in the polymer coating corresponding to the desired metal pattern by irradiating at least a portion of the polymer coating with a sufficient amount of ultraviolet radiation to thereby ablatively remove the irradiated portion of the polymer coating. Next the patterned substrate is coated with a conductive metal paste to define the metal pattern, and the conductive metal paste is cured. The remaining polymer coating is removed by solvent stripping with nonhalogenated solvents. The present invention further includes patterning electronic structures comprising multilayer circuitry using the above method. An excimer laser is used to form vias or through holes in the electronic structure while simultaneously patterning the polymer coating. This results in perfect alignment between the pattern formed in the polymer coating and the vias or through holes. High resolution circuitry is thus attainable when the electronic structure is subsequently metallized with a conductive metal paste.
摘要:
An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%–10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.