公开(公告)号：US09064911B2

公开(公告)日：2015-06-23

申请号：US12603149

申请日：2009-10-21

Applicant: Shambhu N. Roy ,  Matt Cheng-hsiung Tsai

Inventor： Shambhu N. Roy ,  Matt Cheng-hsiung Tsai

IPC: H01L21/67

CPC classification number: H01L21/67109

Abstract: A method and apparatus for controlling the temperature of a substrate support assembly includes a pedestal, a chuck connected to the pedestal, a cooling plate structure thermally coupled with the chuck, a heater thermally coupled with the cooling plate structure, and a controller configured to control the cooling plate structure while controlling the heater during processing of a substrate on the chuck. The method includes cooling a substrate support with a cooling plate structure while heating the cooling plate structure with a heater thermally coupled with the cooling plate structure, monitoring the performance of the cooling plate structure and the heater, and regulating the performance of the cooling plate structure and the heater to maintain the substrate support at a desired temperature.

Abstract translation: 一种用于控制基板支撑组件的温度的方法和装置包括基座，连接到基座的卡盘，与卡盘热耦合的冷却板结构，与冷却板结构热耦合的加热器以及被配置为控制 冷却板结构，同时在卡盘上的基板的加工期间控制加热器。 该方法包括用冷却板结构冷却衬底支撑件，同时用与冷却板结构热耦合的加热器加热冷却板结构，监测冷却板结构和加热器的性能，以及调节冷却板结构的性能 以及将基板支撑保持在所需温度的加热器。

公开(公告)号：US20140027908A1

公开(公告)日：2014-01-30

申请号：US13559107

申请日：2012-07-26

Applicant: Cheng-Hsiung Tsai ,  Chung-Ju Lee ,  Tsung-Jung Tsai ,  Hsiang-Huan Lee ,  Ming Han Lee

Inventor： Cheng-Hsiung Tsai ,  Chung-Ju Lee ,  Tsung-Jung Tsai ,  Hsiang-Huan Lee ,  Ming Han Lee

IPC: H01L21/768 ,  H01L23/535

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A copper alloy layer is blanket deposited over a low k dielectric layer and in via openings within the low k dielectric layer. The blanket deposited layer is then anisotropically etch to form horizontal interconnects. The interconnects are annealed to form a metal oxide barrier lining. A second low k dielectric layer is then depositing over the horizontal interconnects. Air gaps can be formed between adjacent interconnects to lower parasitic capacitance therebetween.

Abstract translation: 铜合金层被覆盖在低k电介质层和低k电介质层内的通孔中。 然后将覆盖层沉积层各向异性地蚀刻以形成水平互连。 将互连件退火以形成金属氧化物屏障衬里。 然后第二低k电介质层在水平互连上沉积。 可以在相邻互连之间形成气隙，以降低它们之间的寄生电容。

公开(公告)号：US08390980B2

公开(公告)日：2013-03-05

申请号：US12539410

申请日：2009-08-11

Applicant: Steven V. Sansoni ,  Cheng-Hsiung Tsai ,  Shambhu N. Roy ,  Karl M. Brown ,  Vijay D. Parkhe ,  Hari Ponnekanti

Inventor： Steven V. Sansoni ,  Cheng-Hsiung Tsai ,  Shambhu N. Roy ,  Karl M. Brown ,  Vijay D. Parkhe ,  Hari Ponnekanti

IPC: H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32431 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68785 ,  H01L2924/0002 ,  H02N13/00 ,  H01L2924/00

Abstract: Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.

Abstract translation: 本发明的实施例提供了一种经济高效的静电卡盘组件，其能够在超高真空环境中在宽的温度范围内运行，同时使静电卡盘组件内的热机械应力最小化。 在一个实施例中，静电卡盘组件包括具有夹持电极的介电体，该夹持电极包括与电介质体的CTE匹配的具有热膨胀系数（CTE）的金属基质复合材料。

公开(公告)号：US20100218785A1

公开(公告)日：2010-09-02

申请号：US12706484

申请日：2010-02-16

Applicant: Richard J. Green ,  Cheng-Hsiung Tsai ,  Shambhu N. Roy ,  Puneet Bajaj ,  David H. Loo

Inventor： Richard J. Green ,  Cheng-Hsiung Tsai ,  Shambhu N. Roy ,  Puneet Bajaj ,  David H. Loo

IPC: C23C14/34 ,  B08B6/00

CPC classification number: H01J37/32862 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3408

Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

Abstract translation: 提供了用于沉积室的原位等离子体清洗的方法和装置。 在一个实施例中，提供了一种用于在不破坏真空的情况下等离子体清洁沉积室的方法。 该方法包括将基板定位在设置在室中的基座上并由电浮动沉积环外接，在基板上沉积金属膜和在室中沉积环，使沉积在沉积环上的金属膜接地而不破坏真空， 以及在腔室中形成的等离子体从室中除去污染物，而不对接地的沉积环上的金属膜进行再溅射，而不破坏真空。

公开(公告)号：US07480129B2

公开(公告)日：2009-01-20

申请号：US11221169

申请日：2005-09-07

Applicant: Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

Inventor： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  Y10T279/23

Abstract: A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

Abstract translation: 可拆卸的静电卡盘可以附接到处理室中的基座。 静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。 卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。 突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。 具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

公开(公告)号：US09396933B2

公开(公告)日：2016-07-19

申请号：US13868385

申请日：2013-04-23

Applicant: Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/12

CPC classification number: H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract translation: 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US07907384B2

公开(公告)日：2011-03-15

申请号：US12315679

申请日：2008-12-04

Applicant: Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

Inventor： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

IPC: H01L21/68 ,  H01L21/683

CPC classification number: H01L21/6831 ,  Y10T279/23

Abstract: A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.

Abstract translation: 基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。 卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。 弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。 底座位于传热板的下方。

公开(公告)号：US07697260B2

公开(公告)日：2010-04-13

申请号：US10816152

申请日：2004-03-31

Applicant: Karl Brown ,  Nora Arellano ,  Semyon Sherstinsky ,  Allen Lau ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Steve Sansoni ,  Wei W. Wang

Inventor： Karl Brown ,  Nora Arellano ,  Semyon Sherstinsky ,  Allen Lau ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Steve Sansoni ,  Wei W. Wang

IPC: H01L21/683 ,  H01T23/00 ,  B23B31/28

CPC classification number: H01L21/6831 ,  Y10T279/23

Abstract: An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.

Abstract translation: 静电卡盘能够附着在处理室中的基座上。 卡盘具有包括具有嵌入电极的陶瓷体的静电压盖。 陶瓷体具有带有环形周边的基板支撑表面。 卡盘还具有作为陶瓷材料和金属的复合材料的静电压盘下面的底板。 基板具有延伸超过陶瓷体周边的环形凸缘。 基板和静电圆盘可以由具有壳体的支撑基座支撑，并且环形凸缘从壳体向外延伸以附接到基板的环形凸缘。 还可以提供具有嵌入式传热流体通道的传热板。

公开(公告)号：US20090201622A1

公开(公告)日：2009-08-13

申请号：US12315679

申请日：2008-12-04

Applicant: Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

Inventor： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  Y10T279/23

Abstract: A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.

Abstract translation: 基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。 卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。 弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。 底座位于传热板的下方。

公开(公告)号：US07550090B2

公开(公告)日：2009-06-23

申请号：US11626121

申请日：2007-01-23

Applicant: Quancheng Gu ,  Cheng-Hsiung Tsai ,  John C. Forster ,  Xiaoxi Guo ,  Larry Frazier

Inventor： Quancheng Gu ,  Cheng-Hsiung Tsai ,  John C. Forster ,  Xiaoxi Guo ,  Larry Frazier

IPC: B44C1/22 ,  B08B9/00 ,  C25F1/00

CPC classification number: C23C14/564 ,  Y10S438/905 ,  Y10S438/906

Abstract: A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.

Abstract translation: 提供了一种用于在预清洁过程中使用的介电圆顶表面的原位清洁方法。 通过提供与含碳膜反应形成含挥发性碳的化合物的一种或多种氧化气体的等离子体来除去含碳沉积物。