摘要:
A nonvolatile memory device includes a first memory structure. The first memory structure includes first through N-th memory dies that may be connected to an external memory controller via a first channel. N is a natural number equal to or greater than two. At least one of the first through N-th memory dies is configured to be used as a first representative die that performs an on-die termination (ODT) operation while a data write operation is performed for one of the first through N-th memory dies.
摘要:
Provided are an electrode lead of a secondary battery where a protection layer for anti-corrosion is selectively formed at an electrode lead portion at the cell outside and a secondary battery including the same. Since a protection layer for anti-corrosion is selectively formed only on an electrode lead portion at the cell outside, the corrosion of the electrode lead may be prevented from an external environment and the resistance of a cell may be reduced simultaneously.
摘要:
A real time monitoring system of a spent fuel pool includes a detection unit configured to detect condition information using a sensor installed in the spent fuel pool; an input storage unit configured to receive and store configuration information of a spent fuel, history information related to burnup, and a normal value and a limit value of current condition information; an operation and determination unit configured to calculate the current condition information of the spent fuel by using the condition information detected by the detection unit and the configuration information and the history information stored in the input storage unit and configured to determine a risk level by comparing the current condition information with the limit value corresponding to the risk level; and a display unit configured to display the current condition information calculated by the operation and determination unit and configured to display the determined risk level.
摘要:
Provided is a secondary battery comprising a separator having an inorganic layer wherein active sites of inorganic particles in the inorganic layer are modified into non-reactive sites. Use of the separator leads to improvements in wettability of an electrolyte and thermoelectric stability and storage characteristics of the secondary battery. Provided is also a method of manufacturing the same secondary battery.
摘要:
Provided is a positive electrode active material. The positive electrode active material includes: a small-diameter active material having an average particle diameter of about 0.5 μm and a maximum particle diameter of less than about 1 μm; and a large-diameter active material having an average particle diameter of about 5 μm to about 20 μm and a maximum particle diameter of less than about 100 μm.
摘要:
The present invention relates to a cooling apparatus for an electronic device. In the present invention, a coolant passing through a condenser 10 is introduced into and s filled in a compensator 15. The coolant passing through the compensator 15 is introduced into a vaporizer 20 and vaporized through heat exchange with an auxiliary heat source H2 provided outside of the vaporizer. In addition, a vaporizing unit 22 made of a porous material is provided in the vaporizer 20. The coolant passing through the vaporizer 20 and a liquid coolant supplied from the condenser 10 are mixed in a vortex generating unit 30 to form a coolant spray, and the coolant spray moves along a spiral trajectory to be formed into a vortex. Meanwhile, the coolant spray of a vortex is injected to be in close contact with the inner wall of an evaporator 50 to be heat-exchanged with a main heat source H1 positioned outside of the evaporator, thereby cooling the main heat source H1. According to the present invention as mentioned above, the main heat source adjacent to the evaporator is heat-exchanged with the coolant more actively to thereby improve the cooling performance of the electronic device. Also, a pressure loss of the coolant spouted from the venturi tube is further reduced.
摘要:
A semiconductor device is disclosed including a through electrode. The semiconductor device may include a first semiconductor chip including a transceiver circuit formed on a first surface, a first coupling conductive pattern which is formed on a second surface opposite the first surface, and a through electrode which connects the transceiver circuit and the first coupling conductive pattern. There may be a transceiver located on a second semiconductor chip and including a second coupling conductive pattern facing the first coupling conductive pattern which communicates wirelessly with the first coupling conductive pattern.
摘要:
An up/down detection unit samples a received data signal and determines in which of first through third areas of the data signal the logic level of the data signal transitions, wherein the data sampling clock signal, the first edge sampling clock signal, and the second edge sampling clock signal are sequentially activated. A lower limit detection unit detects a lower limit of the first area if the logic level of the data signal transitions in the first area. An upper limit detection unit detects an upper limit of the third area if the logic level of the data signal transitions in the third area. A phase detection unit determines a delay amount indicating the amount by which the data signal is to be delayed according to the upper limit and lower limit detected. A buffer unit delays the data signal by the delay amount determined by the phase detection unit.
摘要:
A stacked semiconductor device includes a plurality of stacked chips, each having a plurality of elements to receive a signal. At least one first ladder main signal line for receiving the signal is arranged to pass through the chips. At least one second ladder main signal line is arranged to pass through the chips. A plurality of ladder buffers buffer the signal applied from the first ladder main signal line to the second ladder main signal line. The signal is uniformly distributed to the stacked chips using a ladder type circuit network technique.
摘要:
A semiconductor device having an electrostatic discharge (ESD) protection circuit and a method of testing the same may provided. The semiconductor device may include one or more stacked chips, each stacked chip may include a test circuit configured to output a test control signal and a selection control signal in response to a test enable signal, an internal circuit configured to perform an operation and output a plurality of test signals in response to the test control signal, at least one multiplexer (MUX) configured to select and output one of the plurality of test signals based on the selection control signal, at least one test pad configured to receive the selected test signal, and at least one electrostatic discharge (ESD) protection circuit configured to discharge static electricity applied through the test pad externally.