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公开(公告)号：US20240021754A1
公开(公告)日：2024-01-18
申请号：US18254093
申请日：2020-11-25
发明人： Liyang Zhang , Kai Cheng
CPC分类号： H01L33/16 , H01L33/405 , H01L33/005
摘要： A composite substrate, a photoelectric device and a preparation method therefor. The composite substrate comprises a base substrate and a nano-diamond structure located on the base substrate; the nano-diamond structure comprises a plurality of nano-diamond protrusions arranged at intervals, and a gap is provided between two adjacent nano-diamond protrusions. The photoelectric device comprises the composite substrate, and further comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked on the composite substrate; the first semiconductor layer comprises protruding portions and a flat portion sequentially stacked in the vertical direction, the protruding portions are in the gaps and correspond one-to-one to the gaps, and the flat portion is located on the protruding portions and the nano-diamond structure. The preparation method for the photoelectric device is used for manufacturing the photoelectric device.
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公开(公告)号：US20200243736A1
公开(公告)日：2020-07-30
申请号：US15764822
申请日：2017-01-12
发明人： Liyang Zhang
摘要： Provided are a semiconductor device and a fabrication method for the same. The semiconductor device includes a substrate, a bonding metal layer, a reflective layer, a first conductive layer, an active layer, a second conductive layer, a first electrode and a second electrode. The first electrode runs from one side of the substrate that is away from the bonding metal layer, successively through the substrate, the bonding metal layer, the reflective layer, the second conductive layer and the active layer, and extends to the first conductive layer, with the first electrode connected with the first conductive layer. The second electrode is provided on one side of the substrate away from the bonding metal layer. The semiconductor device has a structure where the second conductive layer is shared, which provides more homogeneous light emission and higher light extraction efficiency, eliminates the interference among pixel units.
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公开(公告)号：US20240213404A1
公开(公告)日：2024-06-27
申请号：US18319471
申请日：2023-05-17
发明人： Liyang Zhang , Kai Cheng
CPC分类号： H01L33/18 , H01L33/06 , H01L33/42 , H01L33/502 , H01L33/60
摘要： A light-emitting device and a method for manufacturing a light-emitting device are provided. The light-emitting device includes: a substrate, provided with at least one light guide channel through the substrate, wherein each of the at least one light guide channel comprises a first opening and a second opening opposite to the first opening, an area of a section of the second opening is greater than an area of a section of the first opening, the substrate comprises a first substrate and a second substrate stacked, and the second substrate is configured to control a direction of light output through the light guide channel; and a light-emitting structure, provided at a side of the substrate where the first opening is located, wherein the light-emitting structure comprises at least one light-emitting unit, each of the at least one light guide channel corresponds to at least one light-emitting unit.
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公开(公告)号：US20230006091A1
公开(公告)日：2023-01-05
申请号：US17781357
申请日：2020-06-11
发明人： Dandan Zhu , Liyang Zhang , Kai Cheng
摘要： This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated region are passivated. The layout of the activated region and the non-activated regions makes an LED include: a high-efficiency light emitting region and light emitting obstacle regions located on two sides of the high-efficiency light emitting region.
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公开(公告)号：US20190051697A1
公开(公告)日：2019-02-14
申请号：US15763610
申请日：2017-01-12
发明人： Liyang Zhang
CPC分类号： H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/505 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0041 , H01L2933/0066
摘要： A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes: a substrate, a bonding metal layer, a reflective layer, a first conductive layer, an active layer, a second conductive layer, first electrode(s) and second electrode(s). The first electrode(s) extends, from one side of the bonding metal layer away from the substrate, to the first conductive layer, to be connected with the bonding metal layer and the first conductive layer. The second electrode(s) penetrates through the substrate and the bonding metal layer to be in contact with the reflective layer. The semiconductor device, forming a structure sharing the first conductive layer, has more uniform illumination and a higher light extraction rate, and eliminates interferences between pixel units, achieves better uniformity of emitted light wavelength and makes distribution of electric current flowing through different pixel units more even.
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公开(公告)号：US20240145626A1
公开(公告)日：2024-05-02
申请号：US18319460
申请日：2023-05-17
发明人： Liyang Zhang , Kai Cheng
CPC分类号： H01L33/12 , H01L27/156 , H01L33/0066 , H01L33/06 , H01L33/20 , H01L33/30 , H01L33/382
摘要： The present application discloses a semiconductor structure including: a base, the base being made of an amorphous material and including at least one trench; a monocrystalline layer, at least part of the monocrystalline layer being provided in the trench; and an epitaxial structure layer, located on the side of the monocrystalline layer away from the base. The semiconductor structure disclosed in the present application includes the monocrystalline layer formed in the at least one trench of the base, and an amorphous material with a thermal expansion coefficient similar to that of the monocrystalline layer is selected as the base, which can relieve the tensile stress generated by the monocrystalline layer during the epitaxial process. At the same time, the epitaxial structure layer is grown on an independent monocrystalline layer, and the size is small, which alleviates the problem of semiconductor film cracking on the large-size substrate.
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公开(公告)号：US20230343589A1
公开(公告)日：2023-10-26
申请号：US17779474
申请日：2021-04-15
发明人： Kai Cheng , Liyang Zhang
IPC分类号： H01L21/02 , H01L21/768 , H01L21/308 , H01L23/48
CPC分类号： H01L21/0254 , H01L21/76898 , H01L21/02381 , H01L21/02433 , H01L21/02164 , H01L21/0217 , H01L21/3081 , H01L21/3086 , H01L23/481
摘要： The disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first group III nitride epitaxial layer disposed on a support substrate, a silicon substrate, a bonding layer and a second group III nitride epitaxial layer; wherein the first group III nitride epitaxial layer is bonded to the silicon substrate by the bonding layer; through-silicon-vias are formed in the silicon substrate, and first through-holes are formed in the bonding layer, wherein the through-silicon-vias communicate with the first through-holes; and the second group III nitride epitaxial layer is disposed within the first through-holes and the through-silicon-vias and on the silicon substrate, wherein the second group III nitride epitaxial layer is coupled to the first group III nitride epitaxial layer. Since the depth to width ratio of the through-silicon-via(s) is great, the dislocation extension within the second group III nitride epitaxial layer is limited, and the probability of dislocation annihilation in the sidewalls of the through-silicon-via(s) is increased, such that the second III nitride epitaxial layer with low dislocation density can be formed, and the quality of the epitaxial layer is improved.
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公开(公告)号：US20220416114A1
公开(公告)日：2022-12-29
申请号：US17771747
申请日：2019-12-13
发明人： Kai Cheng , Liyang Zhang
IPC分类号： H01L33/00 , H01L21/263 , H01L21/461
摘要： Provided is a method of manufacturing a semiconductor structure. The method includes: providing a substrate, where the substrate includes a plurality of component areas and peripheral areas surrounding the plurality of component areas; next, forming a sacrificial layer on each of the plurality of component areas, and forming a semiconductor active layer on the sacrificial layer and the substrate not covered with the sacrificial layer; patterning the semiconductor active layer to remove the semiconductor active layer on the peripheral areas so as to form a plurality of annular grooves which expose the sacrificial layer, such that the semiconductor active layer on each of the plurality of component areas is independent; afterwards, removing the sacrificial layer on each of the plurality of component areas through the annular grooves, such that the independent semiconductor active layer is separated from the substrate, where the independent semiconductor active layer forms a semiconductor structure.
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公开(公告)号：US20220246424A1
公开(公告)日：2022-08-04
申请号：US17616170
申请日：2020-04-26
发明人： Kai Cheng , Liyang Zhang
IPC分类号： H01L21/02
摘要： The present invention provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a substrate; forming an amorphous layer on the substrate, wherein the amorphous layer includes a plurality of patterns to expose part of the substrate; forming a metal nitride layer on the amorphous layer; removing the amorphous layer to form a plurality of cavities between the substrate and the metal nitride layer; removing the substrate to form the semiconductor structure. In the present invention, an amorphous layer is formed on the substrate, and a metal nitride layer is formed on the amorphous layer. The amorphous layer can inhibit slip or dislocation during epitaxial growth, thereby improving the quality of the metal nitride layer and improving the performance of the semiconductor structure, while the metal nitride layer can realize self-supporting.
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公开(公告)号：US10446605B2
公开(公告)日：2019-10-15
申请号：US15763610
申请日：2017-01-12
发明人： Liyang Zhang
IPC分类号： H01L29/20 , H01L27/15 , H01L33/46 , H01L33/38 , H01L33/44 , H01L33/00 , H01L33/62 , H01L33/50 , H01L33/32 , H01L33/06
摘要： A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes: a substrate, a bonding metal layer, a reflective layer, a first conductive layer, an active layer, a second conductive layer, first electrode(s) and second electrode(s). The first electrode(s) extends, from one side of the bonding metal layer away from the substrate, to the first conductive layer, to be connected with the bonding metal layer and the first conductive layer. The second electrode(s) penetrates through the substrate and the bonding metal layer to be in contact with the reflective layer. The semiconductor device, forming a structure sharing the first conductive layer, has more uniform illumination and a higher light extraction rate, and eliminates interferences between pixel units, achieves better uniformity of emitted light wavelength and makes distribution of electric current flowing through different pixel units more even.
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