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公开(公告)号：US6093972A
公开(公告)日：2000-07-25
申请号：US304152
申请日：1999-05-03
Applicant: Francis J. Carney , George Amos Carson , Phillip C. Celaya , Harry Fuerhaupter , Frank Tim Jones , Donald H. Klosterman , Cynthia M. Melton , James Howard Knapp , Keith E. Nelson
Inventor： Francis J. Carney , George Amos Carson , Phillip C. Celaya , Harry Fuerhaupter , Frank Tim Jones , Donald H. Klosterman , Cynthia M. Melton , James Howard Knapp , Keith E. Nelson
CPC classification number: H01L21/565 , H01L21/561 , H01L23/3121 , H01L24/97 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311
Abstract: A microelectronic package (10) is formed and includes an integrated circuit die (12) attached to a substrate (14) by a plurality of solder bump interconnections (16) to form a preassembly (18). The integrated circuit die (12) has an active face (20) that faces the substrate (14) and is spaced apart therefrom by a gap (22). The integrated circuit die (12) also includes a back face (24) opposite the active face (20). The substrate (14) includes a die attach region (26) and a surrounding region (28) about the integrated circuit die (12). The solder bump interconnections (16) extend across the gap (22) and connect the integrated circuit die (12) and the substrate (14). A mold (30) is disposed about the preassembly (18) such that the mold (30) cooperates with the substrate (14) to define a mold cavity (32) that encloses the integrated circuit die (12). The mold (30) has a molding surface (34) that includes the surrounding region (28) and a mold surface (34) that faces the back face (24) and is spaced apart therefrom. A polymeric precursor (36) is dispensed into the mold cavity (32) and is formed against the molding surface (34) and the back face (24). The polymeric precursor (36) is then cured to form a polymeric encapsulant (38) that encapsulates the integrated circuit die (12).
Abstract translation: 形成微电子封装（10）并且包括通过多个焊料凸块互连（16）附接到衬底（14）以形成预组件（18）的集成电路管芯（12）。 集成电路管芯（12）具有面向衬底（14）并与间隔开的间隙（22）的有效面（20）。 集成电路管芯（12）还包括与有源面（20）相对的背面（24）。 衬底（14）包括管芯附接区域（26）和围绕集成电路管芯（12）的周围区域（28）。 焊料凸点互连（16）跨越间隙（22）延伸并连接集成电路管芯（12）和衬底（14）。 模具（30）围绕预组件（18）设置，使得模具（30）与衬底（14）配合以限定围绕集成电路管芯（12）的模腔（32）。 模具（30）具有包括周围区域（28）的模制表面（34）和面向背面（24）并与其间隔开的模具表面（34）。 聚合物前体（36）被分配到模腔（32）中并且抵靠模制表面（34）和背面（24）形成。 聚合物前体（36）然后被固化以形成封装集成电路管芯（12）的聚合密封剂（38）。
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公开(公告)号：US5435838A
公开(公告)日：1995-07-25
申请号：US334998
申请日：1994-11-07
Applicant: Cynthia M. Melton , Alicia Growney , Harry Fuerhaupter
Inventor： Cynthia M. Melton , Alicia Growney , Harry Fuerhaupter
CPC classification number: C23C18/48 , H05K3/3473
Abstract: An electroless immersion plating process for depositing a tin-bismuth plate onto a surface formed of copper or the like comprises immersing the surface into an acidic aqueous solution comprising a tin alkane sulfonate compound, preferably tin methane sulfonate, and a bismuth alkane sulfonate compound, preferably bismuth methane sulfonate. The solution also contains thiourea in an amount effective to reduce tin at the surface. The bismuth compound is added in an amount to produce a bismuth concentration that is less than about 1.0 gram per liter. Furthermore, the ratio of tin to bismuth in the solution is at least 30 to 1, and preferably at least 50 to 1. The process deposits a dense, adherent plate composed of a tin-bismuth alloy containing at least 50 weight percent tin and preferably containing greater than 70 weight percent tin, which plate is well suited for use in microelectronic soldering operations.
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公开(公告)号：US07153449B2
公开(公告)日：2006-12-26
申请号：US10311395
申请日：2001-07-06
Applicant: Uwe Hauf , Harry Fuerhaupter , Alexey Stiop , Udo Grieser
Inventor： Uwe Hauf , Harry Fuerhaupter , Alexey Stiop , Udo Grieser
IPC: C09K13/00
CPC classification number: H05K3/383 , C23C22/52 , C23F1/18 , H05K3/064 , H05K3/28 , H05K2203/0796 , H05K2203/124
Abstract: The present invention relates to a solution and to a method of treating copper surfaces, the copper surfaces being brought into contact with an acidic treatment liquid which contains hydrogen peroxide and at least one five-membered heterocyclic compound as well as additionally at least one microstructure modifying agent selected from the group comprising thioles A, disulfides B, sulfides C and thioamides D having the following respective general formulae: wherein R1 and R2=alkyl, alkenyl, aryl, aralkyl, especially benzyl, cycloalkyl and the derivatives thereof and R3=R1, R1—O, R1—S, amino or substituted amino, wherein R1 and R2 may especially be phenyl or substituted phenyl.
Abstract translation: 本发明涉及一种处理铜表面的方法和方法，所述铜表面与含有过氧化氢和至少一种五元杂环化合物的酸性处理液接触，另外还包括至少一种微结构修饰 选自包含硫醇A，二硫化物B，硫化物C和硫代酰胺D的组分，其具有以下各自的通式：其中R 1和R 2 =烷基，烯基，芳基 ，芳烷基，特别是苄基，环烷基及其衍生物，R 3是R 1，R 1 -O，R 1， 其中R 1和R 2可以特别是苯基或取代的苯基。
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Patent Agency Ranking
公开(公告)号：US5391402A
公开(公告)日：1995-02-21
申请号：US160769
申请日：1993-12-03
Applicant: Cynthia M. Melton , Alicia Growney , Harry Fuerhaupter
Inventor： Cynthia M. Melton , Alicia Growney , Harry Fuerhaupter
CPC classification number: C23C18/48 , H05K3/3473
Abstract: An electroless immersion plating process for depositing a tin-bismuth plate onto a surface formed of copper or the like comprises immersing the surface into an acidic aqueous solution comprising a tin alkane sulfonate compound, preferably tin methane sulfonate, and a bismuth alkane sulfonate compound, preferably bismuth methane sulfonate. The solution also contains thiourea in an amount effective to reduce tin at the surface. The bismuth compound is added in an amount to produce a bismuth concentration that is less than about 1.0 gram per liter. Furthermore, the ratio of tin to bismuth in the solution is at least 30 to 1, and preferably at least 50 to 1. The process deposits a dense, adherent plate composed of a tin-bismuth alloy containing at least 50 weight percent tin and preferably containing greater than 70 weight percent tin, which plate is well suited for use in microelectronic soldering operations.
Abstract translation: 将用于将铜铋平板沉积在由铜等形成的表面上的无电镀浸渍方法包括将表面浸入包含锡烷基磺酸盐化合物，优选甲磺酸锡和酸铋烷磺酸盐化合物的酸性水溶液中 甲磺酸铋。 该溶液还含有有效降低表面锡量的硫脲。 铋化合物的添加量为产生小于约1.0克/升的铋浓度。 此外，溶液中锡与铋的比例为至少30:1，优选至少50:1。该方法沉积由含有至少50重量％锡的锡 - 铋合金构成的致密的粘合板，优选 含有大于70重量％的锡，该板非常适合用于微电子焊接操作。
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5.发明申请公开(公告)号：US20050067378A1
公开(公告)日：2005-03-31
申请号：US10675019
申请日：2003-09-30
Applicant: Harry Fuerhaupter , David Baron , Kuldip Johal , Patrick Brooks
Inventor： Harry Fuerhaupter , David Baron , Kuldip Johal , Patrick Brooks
CPC classification number: C23F1/18 , H05K3/022 , H05K3/064 , H05K3/383 , H05K3/4641 , H05K2201/0338 , H05K2201/068 , H05K2203/124
Abstract: Process to improve adhesion of dielectric materials to a metal layer, including providing an unpatterned metal layer having a first major surface; micro-roughening the first major surface to form a micro-roughened surface; and etching the metal layer to form a circuit pattern in the metal layer, in which the micro-roughening is carried out prior to the etching.
Abstract translation: 提高电介质材料对金属层的附着力的方法，包括提供具有第一主表面的未图案化金属层; 微粗化第一主表面形成微粗糙表面; 并且蚀刻金属层以在金属层中形成电路图案，其中在蚀刻之前进行微粗糙化。
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6.发明授权Tin-bismuth solder connection having improved high temperature properties, and process for forming same 失效具有改善的高温性能的锡 - 铋焊料连接及其形成方法
公开(公告)号：US5320272A
公开(公告)日：1994-06-14
申请号：US42227
申请日：1993-04-02
Applicant: Cynthia Melton , Harry Fuerhaupter , George Demet
Inventor： Cynthia Melton , Harry Fuerhaupter , George Demet
CPC classification number: H05K3/3484 , B23K35/007 , B23K35/264 , H05K3/3463 , H05K2201/0317 , H05K2201/10636 , H05K2201/10992 , H05K2203/0435 , H05K2203/054 , H05K3/243 , H05K3/3442 , H05K3/3452 , H05K3/3473 , Y02P70/611
Abstract: In an electronic package, a solder connection for bonding faying surfaces is formed of tin-bismuth alloy comprising a tertiary metal, preferably gold or silver, in an amount effective to increase the melting temperature of the alloy and enhance mechanical properties of the connection at elevated temperatures typically encountered during operation. A process for forming the solder connection comprises applying a film of the tertiary metal onto at least one faying surface and thereafter applying tin-bismuth solder paste onto the film. Preferably, a plate of tin-bismuth alloy is first electroplated onto the faying surface, onto which the tertiary metal is plated. During heating to reflow the solder, the tertiary metal dissolves to produce a uniform liquid that forms the connection.
Abstract translation: 在电子封装中，用于焊接接合表面的焊接连接由含有第三金属，优选金或银的锡 - 铋合金形成，其量有效地增加合金的熔融温度并增强连接处的升高的机械性能 操作中通常遇到的温度。 用于形成焊接连接的工艺包括将第三金属的膜施加到至少一个引线表面上，然后将锡 - 铋焊膏施加到膜上。 优选地，将锡 - 铋合金板首先电镀在第三金属被电镀的引线表面上。 在加热回流焊料期间，第三金属溶解以产生形成连接的均匀液体。
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7.发明授权Microelectronic package including a polymer encapsulated die, and method for forming same 失效包括聚合物密封模的微电子封装及其形成方法
公开(公告)号：US5895229A
公开(公告)日：1999-04-20
申请号：US858756
申请日：1997-05-19
Applicant: Francis J. Carney , George Amos Carson , Phillip C. Celaya , Harry Fuerhaupter , Frank Tim Jones , Donald H. Klosterman , Cynthia M. Melton , James Howard Knapp , Keith E. Nelson
Inventor： Francis J. Carney , George Amos Carson , Phillip C. Celaya , Harry Fuerhaupter , Frank Tim Jones , Donald H. Klosterman , Cynthia M. Melton , James Howard Knapp , Keith E. Nelson
CPC classification number: H01L21/565 , H01L21/561 , H01L23/3121 , H01L24/97 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311
Abstract: A microelectronic package (10) is formed and includes an integrated circuit die (12) attached to a substrate (14) by a plurality of solder bump interconnections (16) to form a preassembly (18). The integrated circuit die (12) has an active face (20) that faces the substrate (14) and is spaced apart therefrom by a gap (22). The integrated circuit die (12) also includes a back face (24) opposite the active face (20). The substrate (14) includes a die attach region (26) and a surrounding region (28) about the integrated circuit die (12). The solder bump interconnections (16) extend across the gap (22) and connect the integrated circuit die (12) and the substrate (14). A mold (30) is disposed about the preassembly (18) such that the mold (30) cooperates with the substrate (14) to define a mold cavity (32) that encloses the integrated circuit die (12). The mold (30) has a molding surface (34) that includes the surrounding region (28) and a mold surface (34) that faces the back face (24) and is spaced apart therefrom. A polymeric precursor (36) is dispensed into the mold cavity (32) and is formed against the molding surface (34) and the back face (24). The polymeric precursor (36) is then cured to form a polymeric encapsulant (38) that encapsulates the integrated circuit die (12).
Abstract translation: 形成微电子封装（10）并且包括通过多个焊料凸块互连（16）附接到衬底（14）以形成预组件（18）的集成电路管芯（12）。 集成电路管芯（12）具有面向衬底（14）并与间隔开的间隙（22）的有效面（20）。 集成电路管芯（12）还包括与有源面（20）相对的背面（24）。 衬底（14）包括管芯附接区域（26）和围绕集成电路管芯（12）的周围区域（28）。 焊料凸点互连（16）跨越间隙（22）延伸并连接集成电路管芯（12）和衬底（14）。 模具（30）围绕预组件（18）设置，使得模具（30）与衬底（14）配合以限定围绕集成电路管芯（12）的模腔（32）。 模具（30）具有包括周围区域（28）的模制表面（34）和面向背面（24）并与其间隔开的模具表面（34）。 聚合物前体（36）被分配到模腔（32）中并且抵靠模制表面（34）和背面（24）形成。 聚合物前体（36）然后被固化以形成封装集成电路管芯（12）的聚合密封剂（38）。
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公开(公告)号：US5183692A
公开(公告)日：1993-02-02
申请号：US724029
申请日：1991-07-01
Applicant: Prosanto K. Mukerji , Russell Mallen , George Demet , Harry Fuerhaupter
Inventor： Prosanto K. Mukerji , Russell Mallen , George Demet , Harry Fuerhaupter
CPC classification number: C23C18/28 , H05K1/0346 , H05K3/181 , H05K3/381
Abstract: A method for producing a coating composed of an electroless metal plate, such as a copper plate, tightly bonded to a polyimide layer comprises a multi-step cure of the polyimide layer carried out in combination with a palladium-catalyzed electroless deposition process. A solution of a polyamic acid compound that is the precursor for the desired polyimide resin in a vaporizable solvent is applied to a substrate and heated preferably to temperature below 250.degree. C., to form a soft-cured polyimide film. The film is immersed in an aqueous palladium-tin colloidal suspension to deposit the colloidal particles thereon, which particles are then activated to form palladium nuclei dspersed on the surface. The soft-cured film is then heated, preferably above about 250.degree. C., to vaporize residual solvent and form a hard-cured polyimide layer having the palladium nuclei dispersed on the surface. The hard-cured layer is immersed in an electroless metal plating solution, whereupon the palladium nuclei catalyze deposition of the metal to form a continuous plate. In one aspect of the method, the metal-clad layer is further heated between about 350.degree. C. and 450.degree. C. to final cure the polyimide. It is found that the plate of the coating formed by this multi-cure method strongly adheres to the polymer layer to permit extended deposition and thereby form a relatively thicker plate without catastrophic separation from the polymer.
Abstract translation: 用于与由聚酰亚胺层紧密接合的铜板等化学金属板构成的涂层的制造方法包括与钯催化的无电沉积工艺结合进行的多层聚酰亚胺层的固化。 将作为所需聚酰亚胺树脂的前体的聚酰胺酸化合物在可汽化溶剂中的溶液施加到基底上，并优选加热至低于250℃，形成软固化的聚酰亚胺膜。 将膜浸入钯 - 锡胶体悬浮液中以沉积其上的胶体颗粒，然后将该颗粒活化以形成在表面上分散的钯核。 然后将软化固化膜加热，优选高于约250℃，蒸发残余溶剂，并形成具有分散在表面上的钯核的硬固化聚酰亚胺层。 将硬固化层浸渍在无电镀金属溶液中，由此钯核催化金属沉积形成连续板。 在该方法的一个方面，金属包覆层在约350℃至450℃之间进一步加热以最终固化聚酰亚胺。 发现通过这种多固化方法形成的涂层的板强烈地粘附到聚合物层以允许延长的沉积，从而形成相对较厚的板，而没有与聚合物的灾难性分离。
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