公开(公告)号：US10197988B2

公开(公告)日：2019-02-05

申请号：US14009698

申请日：2012-05-09

申请人： Ki Hong Kim

发明人： Ki Hong Kim

IPC分类号： G05B19/404 ,  B23Q5/56 ,  F16H25/20 ,  F16H57/12 ,  B23Q5/40

摘要： According to an embodiment of the present invention, a torque variation of a servomotor, which is measured in a numerical control apparatus of an existing numerical control machine tool, is observed, and a backlash is detected by calculating a transfer distance of an output shaft of the servomotor at a torque peak, without adding additional positioning detection equipment, thereby detecting an accurate backlash amount without adding additional equipment.

公开(公告)号：US20180207480A1

公开(公告)日：2018-07-26

申请号：US15743544

申请日：2016-06-24

申请人： Sun Ki HONG

发明人： Sun Ki HONG

IPC分类号： A63B24/00 ,  A61B5/00 ,  A61B5/026 ,  A61B5/0205 ,  A61B5/0402 ,  A61B5/0488 ,  A61B5/145 ,  A61B5/11 ,  A63B71/06

CPC分类号： A63B24/0062 ,  A61B5/002 ,  A61B5/02055 ,  A61B5/021 ,  A61B5/024 ,  A61B5/026 ,  A61B5/0261 ,  A61B5/0402 ,  A61B5/0488 ,  A61B5/08 ,  A61B5/1118 ,  A61B5/1128 ,  A61B5/14546 ,  A61B5/4824 ,  A61B5/4866 ,  A61B5/6804 ,  A61B5/746 ,  A61B2503/10 ,  A61B2560/0247 ,  A61B2560/0252 ,  A63B71/0054 ,  A63B71/0622 ,  A63B71/12 ,  A63B71/1225 ,  A63B2071/0625 ,  A63B2071/0655 ,  A63B2071/1258 ,  A63B2220/20 ,  A63B2220/30 ,  A63B2220/62 ,  A63B2220/72 ,  A63B2220/73 ,  A63B2220/75 ,  A63B2220/76 ,  A63B2220/78 ,  A63B2220/805 ,  A63B2220/807 ,  A63B2220/836 ,  A63B2225/50 ,  A63B2230/045 ,  A63B2230/062 ,  A63B2230/305 ,  A63B2230/405 ,  A63B2230/438 ,  A63B2230/505 ,  A63B2230/605 ,  G16H20/40

摘要： Provided is an apparatus for managing a player with a guard including a sensor sensing a vital information of a player to calculate an injury risk of the player to thereby manage a condition of the player, the apparatus including: a communication unit receiving the vital information from the guard and transmitting the injury risk to the guard; a memory storing a program calculating the injury risk to manage the condition of the player; and a processor connected to the communication unit and the memory to execute an operation implemented by the program, in which the program may include instructions using the vital information and pre-stored vital recovering ability data of the player to calculate the injury risk of the player.

公开(公告)号：US09966375B2

公开(公告)日：2018-05-08

申请号：US15049648

申请日：2016-02-22

申请人： Yong-Joon Choi ,  Tae-Yong Kwon ,  Mirco Cantoro ,  Chang-Jae Yang ,  Dong-Hoon Khang ,  Woo-Ram Kim ,  Cheol Kim ,  Seung-Jin Mun ,  Seung-Mo Ha ,  Do-Hyoung Kim ,  Seong-Ju Kim ,  So-Ra You ,  Woong-ki Hong

发明人： Yong-Joon Choi ,  Tae-Yong Kwon ,  Mirco Cantoro ,  Chang-Jae Yang ,  Dong-Hoon Khang ,  Woo-Ram Kim ,  Cheol Kim ,  Seung-Jin Mun ,  Seung-Mo Ha ,  Do-Hyoung Kim ,  Seong-Ju Kim ,  So-Ra You ,  Woong-ki Hong

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/10 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/11 ,  H01L29/165

CPC分类号： H01L27/0924 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0207 ,  H01L27/1104 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.

公开(公告)号：US09892163B2

公开(公告)日：2018-02-13

申请号：US14450114

申请日：2014-08-01

申请人： Ki Hong Kim ,  Sangyong Hwang ,  Sung Heun Wi ,  Jane Jung Lee ,  Joo Young Yoon ,  Sang Kyun Cha

发明人： Ki Hong Kim ,  Sangyong Hwang ,  Sung Heun Wi ,  Jane Jung Lee ,  Joo Young Yoon ,  Sang Kyun Cha

IPC分类号： G06F17/30

CPC分类号： G06F17/30469 ,  G06F17/30463 ,  G06F17/30466

摘要： Total global minimum costs can be determined for multiple sub-plans for completing a multi-operation database process to be performed in a distributed database management system that includes a plurality of nodes. The multiple sub-plans can include different distributions of node locations of a plurality of operators among the plurality of nodes. An optimal plan having a lowest total minimum global cost can be selected from the multiple sub-plans.

公开(公告)号：US09634152B2

公开(公告)日：2017-04-25

申请号：US13537650

申请日：2012-06-29

申请人： Ki Hong Lee ,  Seung Ho Pyi ,  Jung Yun Chang

发明人： Ki Hong Lee ,  Seung Ho Pyi ,  Jung Yun Chang

IPC分类号： H01L27/088 ,  H01L21/8239 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11582

摘要： A semiconductor device includes memory blocks each configured to comprise a pair of channels, each channel including a pipe channel formed in a pipe gate of the memory block and a drain-side channel and a source-side channel coupled to the pipe channel; first slits placed between the memory blocks adjacent to other memory blocks; and a second slit placed between the source-side channel and the drain-side channel of each pair of channels.

公开(公告)号：US09620513B2

公开(公告)日：2017-04-11

申请号：US13599148

申请日：2012-08-30

申请人： Ki Hong Lee ,  Seung Ho Pyi ,  Sung Ik Moon

发明人： Ki Hong Lee ,  Seung Ho Pyi ,  Sung Ik Moon

IPC分类号： H01L27/11 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11548 ,  H01L27/11575

CPC分类号： H01L27/11582 ,  H01L21/0332 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575

摘要： A semiconductor device includes a cell structure; n first pad structures formed on one side of the cell structure and each configured to have a step form in which 2n layers form one stage; and n second pad structures formed on the other side of the cell structure each configured to have a step form in which 2n layers form one stage, wherein n is a natural number of 1 or higher, and the first pad structures and the second pad structures have asymmetrical step forms having different heights.

公开(公告)号：US20160254219A1

公开(公告)日：2016-09-01

申请号：US15153970

申请日：2016-05-13

申请人： Dae Sung YOO ,  Han Mo KOO ,  Ki Tae PARK ,  Jun Young LIM ,  Tae Ki HONG

发明人： Dae Sung YOO ,  Han Mo KOO ,  Ki Tae PARK ,  Jun Young LIM ,  Tae Ki HONG

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L23/492

CPC分类号： H01L23/49811 ,  H01L23/315 ,  H01L23/4924 ,  H01L23/49572 ,  H01L23/49582 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/50 ,  H01L24/86 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

摘要： Provided is a tape for electronic devices with lead crack and a method of manufacturing the tape. According to the present invention, by forming a bending portion on a narrow circuit pattern to be connected from an inner lead to an outer lead and further forming the bending portion within a resin application portion, crack occurred in a narrow wiring width can be avoided. The tape may includes a first lead and a second lead formed on a dielectric substrate and a bending portion formed on one of the first lead and the second lead wherein the bending portion is formed within a resin application portion.

摘要翻译： 提供了一种具有铅裂的电子设备的带子和一种制造带子的方法。 根据本发明，通过在从内引线到外引线连接的窄电路图案上形成弯曲部，并且在树脂施加部内进一步形成弯曲部，可以避免窄布线宽度的裂纹。 带可以包括形成在电介质基板上的第一引线和第二引线以及形成在第一引线和第二引线之一上的弯曲部分，其中弯曲部分形成在树脂施加部分内。

公开(公告)号：US09397391B2

公开(公告)日：2016-07-19

申请号：US13885374

申请日：2011-11-15

申请人： Yang-Ki Hong ,  Seok Bae ,  Jae-Jin Lee

发明人： Yang-Ki Hong ,  Seok Bae ,  Jae-Jin Lee

IPC分类号： B05D5/12 ,  H01Q1/36 ,  H01F1/34 ,  H01Q1/22 ,  H01Q1/38

CPC分类号： H01Q1/364 ,  H01F1/348 ,  H01Q1/2283 ,  H01Q1/38 ,  Y10T29/49016

摘要： An antenna is fabricated using an M-type hexaferrite, such as a tin (Sn) and zinc (Zn) substituted M-type strontium hexaferrite (Sn/Zn-substituted SrM: SrFe12−2xZnxSnxO19), thereby enabling antenna miniaturization, broad bandwidth, and high gain. In one embodiment, an antenna system has a substrate and a chip antenna formed on the substrate. The system also has a conductive radiator contacting the chip antenna, and the chip antenna comprises an M-type strontium hexaferrite for which Fe cations are substituted with tin (Sn) and zinc (Zn) to achieve soft magnetic properties for the antenna. Thus, the coercivity and permeability are lower and higher, respectively, than those of pure SrM. Such fabricated hexaferrite chip antennas have broadband characteristics and show good radiation performance at various frequencies, including in the GHz frequency range.

摘要翻译： 使用诸如锡（Sn）和锌（Zn）取代的M型六方铁氧锶（Sn / Zn取代的SrM：SrFe12-2xZnxSnxO19）的M型六铁素制造天线，从而使天线小型化，宽带宽， 和高增益。 在一个实施例中，天线系统具有形成在基板上的基板和芯片天线。 该系统还具有与芯片天线接触的导电散热器，并且芯片天线包括M型六方铁氧体，其中Fe阳离子被锡（Sn）和锌（Zn）所取代，以获得天线的软磁特性。 因此，矫顽力和渗透率分别低于纯SrM的矫顽力和渗透率。 这种制造的六方铁芯片天线具有宽带特性，并且在各种频率（包括在GHz频率范围内）表现出良好的辐射性能。

公开(公告)号：US09293614B2

公开(公告)日：2016-03-22

申请号：US13565828

申请日：2012-08-03

申请人： Min-Seok Oh ,  Doo-Youl Lee ,  Young-Jin Kim ,  Min Park ,  Yun-Seok Lee ,  Nam-Kyu Song ,  Dong-Seop Kim ,  Cho-Young Lee ,  Chan-Bin Mo ,  Young-Su Kim ,  Hoon-Ha Jeon ,  Yeon-Ik Jang ,  Jun-Ki Hong ,  Young-Sang Park ,  Chan-Yoon Jung

发明人： Min-Seok Oh ,  Doo-Youl Lee ,  Young-Jin Kim ,  Min Park ,  Yun-Seok Lee ,  Nam-Kyu Song ,  Dong-Seop Kim ,  Cho-Young Lee ,  Chan-Bin Mo ,  Young-Su Kim ,  Hoon-Ha Jeon ,  Yeon-Ik Jang ,  Jun-Ki Hong ,  Young-Sang Park ,  Chan-Yoon Jung

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0747

CPC分类号： H01L31/03529 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

摘要： A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

摘要翻译： 一种太阳能电池，包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层，所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。

公开(公告)号：US09190723B1

公开(公告)日：2015-11-17

申请号：US13247515

申请日：2011-09-28

申请人： Yang-Ki Hong ,  Seok Bae ,  Jae-Jin Lee

发明人： Yang-Ki Hong ,  Seok Bae ,  Jae-Jin Lee

IPC分类号： H01Q1/52 ,  H01Q21/28

CPC分类号： H01Q9/42 ,  H01Q1/52 ,  H01Q1/521 ,  H01Q17/00 ,  H01Q21/28 ,  H04B7/0413

摘要： A Multi-Input-Multi-Output (MIMO) system has multiple radiation elements and absorbers disposed on a substrate. The absorbers are positioned about the radiation elements to reduce the interference between the radiation elements. Use of the absorbers permits interference levels comparable to conventional MIMO systems using spatial diversity without requiring the antennas to be separated by at least one-half of the wavelength of the communicated signals. A ground plane on the substrate is also positioned on the substrate to enhance antenna system performance.

摘要翻译： 多输入多输出（MIMO）系统具有设置在基板上的多个辐射元件和吸收体。 吸收体围绕辐射元件定位以减小辐射元件之间的干扰。 吸收体的使用允许与使用空间分集的常规MIMO系统相当的干扰水平，而不需要将天线分离通信信号的波长的至少一半。 衬底上的接地平面也位于衬底上，以增强天线系统性能。