公开(公告)号：US08647983B2

公开(公告)日：2014-02-11

申请号：US13380595

申请日：2010-07-01

申请人： Lea Di Cioccio ,  Pierric Gueguen ,  Maurice Rivoire

发明人： Lea Di Cioccio ,  Pierric Gueguen ,  Maurice Rivoire

IPC分类号： H01L21/44 ,  H01L21/50

CPC分类号： B81C1/00269 ,  B81C1/00301 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/038 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/05547 ,  H01L2224/08148 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1461 ,  H01L2924/00

摘要： A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other.

摘要翻译： 一种将第一铜元素接合到第二铜元件上的方法，包括在元件将与之接触的第一元件和第二元件的每一个的每个表面上形成富含氧的结晶铜层，两层的总厚度为 小于6nm，其包括：a）抛光表面以获得小于1nm RMS的粗糙度和亲水表面，b）清洁表面以抑制由于抛光和大部分腐蚀而导致的颗粒的存在 抑制剂，和c）将富含氧的两个结晶铜层彼此接触。

公开(公告)号：US07492026B2

公开(公告)日：2009-02-17

申请号：US11323074

申请日：2005-12-30

申请人： Danielle Thomas ,  Maurice Rivoire

发明人： Danielle Thomas ,  Maurice Rivoire

IPC分类号： H01L31/00

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14692 ,  H01L31/022408

摘要： A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

摘要翻译： 位于集成电路上方的光传感器包括下电极，第一导电类型的重掺杂非晶硅层和第二导电类型的轻掺杂非晶硅层。 轻掺杂的非晶硅层至少位于下电极的上方和附近的平坦表面上。

公开(公告)号：US06399502B1

公开(公告)日：2002-06-04

申请号：US09540188

申请日：2000-03-31

申请人： Caroline Hernandez ,  Yves Campidelli ,  Maurice Rivoire ,  Daniel Bensahel

发明人： Caroline Hernandez ,  Yves Campidelli ,  Maurice Rivoire ,  Daniel Bensahel

IPC分类号： H01L2100

CPC分类号： H01L31/1812 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/32115 ,  H01L29/125 ,  H01L29/165 ,  H01L31/035254 ,  H01L33/24 ,  H01L33/34 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2234 ,  H01S5/3224 ,  Y02E10/50

摘要： The process comprises: etching, in a semiconductor substrate (2), at least one trench (3) with predetermined width and depth; depositing, on the substrate and in the trench, a stack of successive and alternate layers of Si1−xGex (0

摘要翻译： 该方法包括：在半导体衬底（2）中蚀刻具有预定宽度和深度的至少一个沟槽（3）; 在衬底和沟槽中沉积Si1-xGex（0

公开(公告)号：US20120097296A1

公开(公告)日：2012-04-26

申请号：US13380633

申请日：2010-07-01

申请人： Lea Di Cioccio ,  Pierric Gueguen ,  Maurice Rivoire

发明人： Lea Di Cioccio ,  Pierric Gueguen ,  Maurice Rivoire

IPC分类号： C22F1/08 ,  C23F1/00

CPC分类号： H01L21/76886 ,  H01L21/31053 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76883

摘要： A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing.

摘要翻译： 一种用于改变具有平坦表面的铜元件的晶体结构的方法，包括：a）制备具有大晶粒的铜标准，其中标准包括平面表面，b）将平坦表面的粗糙度减小到小于1的粗糙度 nm，c）清洁平面，d）使两个平面接触，e）退火。

公开(公告)号：US07200908B2

公开(公告)日：2007-04-10

申请号：US11442420

申请日：2006-05-26

申请人： Fabrice Cassett ,  Guillaume Bouche ,  Maurice Rivoire

发明人： Fabrice Cassett ,  Guillaume Bouche ,  Maurice Rivoire

IPC分类号： H01G7/00 ,  H01G5/00

CPC分类号： H01H59/0009 ,  H01G5/16 ,  H01G5/18 ,  H01H2059/0081 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49156

摘要： A method of making a variable capacitor by forming a grove portion in an insulating substrate, two upper portions of the substrate located on either side of the groove portion forming two lateral edges, a conductive layer covering the inside of the groove portion, a flexible conductive membrane, placed above the groove portion by bearing on the edges, a dielectric layer covering the conductive layer or the membrane to insulate the conductive layer and the membrane, and terminals of application of a voltage between the conductive layer and the membrane, and such that the depth of the groove portion continuously increases from one of the edges to the bottom of the groove portion, and that the conductive layer covers the inside of the groove portion at least to reach one of the two edges, that it may cover.

摘要翻译： 一种通过在绝缘基板中形成槽部来制造可变电容器的方法，位于形成两个侧边缘的槽部分的任一侧上的基板的两个上部，覆盖槽部分内部的导电层，柔性导电 膜，通过承载在边缘上而置于凹槽部分上方，覆盖导电层或膜的电介质层以使导电层和膜绝缘，以及在导电层和膜之间施加电压的端子，使得 凹槽部分的深度从凹槽部分的一个边缘到底部连续地增加，并且导电层至少覆盖凹槽部分的内部，至少可以覆盖两个边缘中的一个。

公开(公告)号：US07144814B2

公开(公告)日：2006-12-05

申请号：US09427675

申请日：1999-10-27

申请人： Eric Jacquinot ,  Pascal Letourneau ,  Maurice Rivoire

发明人： Eric Jacquinot ,  Pascal Letourneau ,  Maurice Rivoire

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Abrasive composition for the integrated circuits electronics industry comprising an aqueous acid suspension of individualized colloidal silica particles not linked to each other by siloxane bonds and an abrasive surfactant, this abrasive being for mechanical chemical polishing in the integrated circuits industry, comprising a fabric impregnated by such a composition, and a process for mechanical chemical polishing.

摘要翻译： 用于集成电路电子工业的研磨组合物包括通过硅氧烷键彼此不相连的单独胶体二氧化硅颗粒的水性酸悬浮液和研磨性表面活性剂，该研磨剂用于在集成电路工业中的机械化学抛光，其包含浸渍在其中的织物 组合物和机械化学抛光方法。

公开(公告)号：US20060114638A1

公开(公告)日：2006-06-01

申请号：US10999211

申请日：2004-11-29

申请人： Fabrice Casset ,  Guillaume Bouche ,  Maurice Rivoire

发明人： Fabrice Casset ,  Guillaume Bouche ,  Maurice Rivoire

IPC分类号： H01G5/00

CPC分类号： H01H59/0009 ,  H01G5/16 ,  H01G5/18 ,  H01H2059/0081 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49156

摘要： A variable capacitor having a groove portion formed in an insulating substrate, two upper portions of the substrate located on either side of the groove portion forming two lateral edges, a conductive layer covering the inside of the groove portion, a flexible conductive membrane, placed above the groove portion by bearing on the edges, a dielectric layer covering the conductive layer or the membrane to insulate the conductive layer and the membrane, and terminals of application of a voltage between the conductive layer and the membrane, and such that the depth of the groove portion continuously increases from one of the edges to the bottom of the groove portion, and that the conductive layer covers the inside of the groove portion at least to reach one of the two edges, that it may cover.

摘要翻译： 一种可变电容器，其具有形成在绝缘基板中的槽部，位于形成两个侧边缘的槽部的任一侧的基板的两个上部，覆盖所述槽部的内部的导电层，位于上方的柔性导电膜 沟槽部分通过承载在边缘上，覆盖导电层或膜的电介质层以使导电层和膜绝缘，以及在导电层和膜之间施加电压的端子，并且使得 凹槽部分从凹槽部分的一个边缘到底部连续地增加，并且导电层至少覆盖凹槽部分的内部至少可以覆盖两个边缘中的一个。

公开(公告)号：US6126518A

公开(公告)日：2000-10-03

申请号：US054518

申请日：1998-04-03

申请人： Eric Jacquinot ,  Maurice Rivoire ,  Catherine Euvrard

发明人： Eric Jacquinot ,  Maurice Rivoire ,  Catherine Euvrard

IPC分类号： B24B37/00 ,  C01B33/143 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/02024 ,  C01B33/143 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3043 ,  H01L21/31053 ,  H01L21/3212

摘要： Chemical mechanical polishing process for a layer of semiconductor material such as polycrystalline silicon, epitaxial single-crystal silicon, amorphous silicon or an isolating material such as phosphosilicate glass or borophosphosilicate glass used in the microelectronics semiconductors industry, with the exception of the initial silicon used in the manufacture of wafers for integrated circuits, in which an abrasion of the layer of semiconductor material or isolating material is carried out by rubbing the said layer with a fabric impregnated with an abrasive composition, the abrasive consisting of an aqueous suspension having a neutral pH or a pH close to neutrality of individualised colloidal silica particles, not linked together by siloxane bonds, and water as the suspension medium.

摘要翻译： 用于微电子半导体工业中使用的半导体材料层例如多晶硅，外延单晶硅，非晶硅或隔离材料如磷硅酸盐玻璃或硼磷硅酸盐玻璃的化学机械抛光工艺，除了用于 用于集成电路的晶片的制造，其中通过用浸渍有磨料组合物的织物摩擦所述层来进行半导体材料层或隔离材料的磨损，所述磨料由具有中性pH的水悬浮液或 接近未通过硅氧烷键连接在一起的个体化胶体二氧化硅颗粒的中性和作为悬浮介质的水的pH。

公开(公告)号：US5431964A

公开(公告)日：1995-07-11

申请号：US111894

申请日：1993-08-26

申请人： Maurice Rivoire

发明人： Maurice Rivoire

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  B05D3/06 ,  C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/4405 ,  H01L21/76879

摘要： The invention relates to the method of pretreating a deposition chamber intended to be used for the selective vapor deposition of tungsten, characterized in that a plasma of fluorine-containing gas, optionally combined with an inert diluting gas, is induced in the said deposition chamber.Advantageously, the same fluorine treatment is applied to the substrate intended to receive the selective tungsten deposition.

摘要翻译： 本发明涉及预处理用于钨选择性气相沉积的沉积室的方法，其特征在于在所述沉积室中诱导含氟气体的等离子体，任选与惰性稀释气体组合。 有利地，相同的氟处理被施加到旨在接收选择性钨沉积的基板。

公开(公告)号：US09620412B2

公开(公告)日：2017-04-11

申请号：US13380633

申请日：2010-07-01

申请人： Lea Di Cioccio ,  Pierric Gueguen ,  Maurice Rivoire

发明人： Lea Di Cioccio ,  Pierric Gueguen ,  Maurice Rivoire

IPC分类号： C22F1/08 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3105

CPC分类号： H01L21/76886 ,  H01L21/31053 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76883

摘要： A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing.