公开(公告)号：US12205522B2

公开(公告)日：2025-01-21

申请号：US17677857

申请日：2022-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten Baumheinrich ,  Peter Brick ,  Jean-Jacques Drolet ,  Hubert Halbritter ,  Laura Kreiner ,  Jens Richter ,  Thomas Schwarz ,  Paul Ta ,  Kilian Regau ,  Christopher Soell ,  Hoa Vu ,  Christopher Wiesmann ,  Patrick Hoerner ,  Jong Park ,  Kanishk Chand

IPC: G09G3/32 ,  B60K35/00 ,  B60K35/22 ,  G09G5/10

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US12199224B2

公开(公告)日：2025-01-14

申请号：US17421950

申请日：2020-01-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Reeswinkel ,  Jens Eberhard

IPC: H01L33/54 ,  H01L33/00 ,  H01L33/48 ,  H01L33/62

Abstract: In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

公开(公告)号：US12199222B2

公开(公告)日：2025-01-14

申请号：US17824429

申请日：2022-05-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Xue Wang ,  Petrus Sundgren ,  Laura Kreiner

IPC: H01L33/52 ,  B60K35/00 ,  B60K35/22 ,  H01L25/075 ,  H01L33/04 ,  H01L33/50 ,  H01L33/60

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US12198606B2

公开(公告)日：2025-01-14

申请号：US17515057

申请日：2021-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten Baumheinrich ,  Peter Brick ,  Jean-Jacques Drolet ,  Hubert Halbritter ,  Laura Kreiner ,  Jens Richter ,  Thomas Schwarz ,  Paul Ta ,  Kilian Regau ,  Christopher Soell ,  Hoa Vu ,  Christopher Wiesmann ,  Patrick Hoerner ,  Jong Park ,  Kanishk Chand

IPC: G09G3/32 ,  B60K35/00 ,  G09G5/10 ,  B60K35/22

Abstract: Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US12190788B2

公开(公告)日：2025-01-07

申请号：US17515102

申请日：2021-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten Baumheinrich ,  Peter Brick ,  Jean-Jacques Drolet ,  Hubert Halbritter ,  Laura Kreiner ,  Jens Richter ,  Thomas Schwarz ,  Paul Ta ,  Kilian Regau ,  Christopher Soell ,  Hoa Vu ,  Christopher Wiesmann ,  Patrick Hoerner ,  Jong Park ,  Kanishk Chand

IPC: G09G3/32 ,  B60K35/00 ,  B60K35/22 ,  G09G5/10

Abstract: Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US12132158B2

公开(公告)日：2024-10-29

申请号：US17432429

申请日：2020-02-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Richard Scheicher ,  Thomas Huettmayer ,  Ivar Tangring ,  Angela Eberhardt ,  Florian Peskoller

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44 ,  H01L33/58

CPC classification number: H01L33/62 ,  H01L33/005 ,  H01L33/22 ,  H01L33/44 ,  H01L33/58 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 μm, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.

公开(公告)号：US12128821B2

公开(公告)日：2024-10-29

申请号：US17430855

申请日：2020-02-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Brandl ,  Peter Brick ,  Uli Hiller ,  Sebastian Stigler ,  Armin Wetterer

IPC: B60Q3/62 ,  B60Q3/54 ,  B60Q3/74 ,  B60R13/02 ,  D03D15/547 ,  D06N3/00

CPC classification number: B60Q3/62 ,  B60Q3/54 ,  B60Q3/745 ,  B60R13/02 ,  D03D15/547 ,  D06N3/0002 ,  D06N2201/00 ,  D06N2209/0892 ,  D10B2401/18 ,  D10B2401/20 ,  D10B2403/02431

Abstract: A light emitting device includes a radiation source for the emission of electromagnetic radiation and a converter element on which the electromagnetic radiation impinges in a first surface region and which, excited by the impinged electromagnetic radiation, emits visible light into an environment in a second surface region which differs at least partially from the first surface region. The wavelength of the light emitted into the environment differs from the wavelength of the electromagnetic radiation impinged on the converter element. The converter element includes a luminous element including a textile with a converter material. The converter material due to excitation by the electromagnetic radiation with a first wavelength emits visible light with a second wavelength differing from the first wavelength. The radiation source realizes a background illumination for the converter element. The first surface region is formed by a side surface or a back surface of the converter element.

公开(公告)号：US12125951B2

公开(公告)日：2024-10-22

申请号：US17530543

申请日：2021-11-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Erik Johansson ,  Robert Fitzmorris ,  Kevin Wiese ,  James Wyckoff

IPC: H01L33/50 ,  H01L25/16 ,  H01L33/00 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L33/504 ,  H01L25/167 ,  H01L33/005 ,  H01L33/54 ,  H01L33/56 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A structure comprising a nanoparticle converting electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength range, an interlayer at least partially surrounding the nanoparticle, and an encapsulation at least partially surrounding the interlayer is specified, wherein the interlayer comprises a plurality of first amphiphilic ligands and a plurality of second amphiphilic ligands and the first ligands and the second ligands are intercalated.
Furthermore, an agglomerate comprising a plurality of structures, an optoelectronic device as well as methods for producing a structure and an agglomerate are disclosed.

公开(公告)号：US12119620B2

公开(公告)日：2024-10-15

申请号：US17430658

申请日：2020-01-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke

IPC: H01S5/024 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/4043 ,  H01S5/02461 ,  H01S5/0282 ,  H01S5/0287

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

公开(公告)号：US12100782B2

公开(公告)日：2024-09-24

申请号：US17435612

申请日：2020-03-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alvaro Gomez-Iglesias ,  Asako Hirai

IPC: H01L33/14 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/14 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first layer and the second layer, the semiconductor layer sequence having at least one injection region, wherein the first layer includes a first conductivity type, wherein the second layer includes a second conductivity type, wherein the semiconductor layer sequence includes the first conductivity type within the entire injection region, wherein the injection region, starting from the first layer, at least partially penetrates the active layer, wherein side surfaces of the semiconductor layer sequence are formed at least in places by the injection region, and wherein the injection region is configured to inject charge carriers directly into the active layer.