专利检索 ap:("Ralf Otremba" OR "Joachim Mahler" OR "Bernd Rakow" OR "Reimund Engl" OR "Rupert Fischer") AND inv:"Joachim Mahler" 第 1 页

1.

发明申请
SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件

公开(公告)号：US20110189821A1

公开(公告)日：2011-08-04

申请号：US12899622

申请日：2010-10-07

申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

IPC分类号： H01L21/50

CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device and method is disclosed. One embodiment provides a method comprising placing a first semiconductor chip on a carrier. After placing the first semiconductor chip on the carrier, an electrically insulating layer is deposited on the carrier. A second semiconductor chip is placed on the electrically insulating layer.

摘要翻译： 公开了半导体器件和方法。一个实施例提供了一种方法，包括将第一半导体芯片放置在载体上。在将第一半导体芯片放置在载体上之后，在载体上沉积电绝缘层。第二半导体芯片放置在电绝缘层上。

2.

发明授权
Semiconductor device with a metallic carrier and two semiconductor chips applied to the carrier 有权
标题翻译：具有金属载体的半导体器件和应用于载体的两个半导体芯片

公开(公告)号：US07868465B2

公开(公告)日：2011-01-11

申请号：US11757649

申请日：2007-06-04

申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

IPC分类号： H01L23/48 , H01L21/58

CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.

摘要翻译： 公开了一种半导体器件。一个实施例提供一种包括载体，施加到载体上的电绝缘层，施加到电绝缘层的粘合剂层的装置。施加到粘合剂层的第一半导体芯片。

3.

发明申请
SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件

公开(公告)号：US20080296782A1

公开(公告)日：2008-12-04

申请号：US11757649

申请日：2007-06-04

申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

IPC分类号： H01L23/48 , H01L21/58

CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.

摘要翻译： 公开了一种半导体器件。一个实施例提供一种包括载体，施加到载体上的电绝缘层，施加到电绝缘层的粘合剂层的装置。施加到粘合剂层的第一半导体芯片。

4.

发明授权
Semiconductor device 有权
标题翻译：半导体器件

公开(公告)号：US08642408B2

公开(公告)日：2014-02-04

申请号：US12899622

申请日：2010-10-07

申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer

IPC分类号： H01L21/00 , H01L23/495

CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device and method is disclosed. One embodiment provides a method comprising placing a first semiconductor chip on a carrier. After placing the first semiconductor chip on the carrier, an electrically insulating layer is deposited on the carrier. A second semiconductor chip is placed on the electrically insulating layer.

摘要翻译： 公开了半导体器件和方法。一个实施例提供了一种方法，包括将第一半导体芯片放置在载体上。在将第一半导体芯片放置在载体上之后，在载体上沉积电绝缘层。第二半导体芯片放置在电绝缘层上。

5.

发明申请
SEMICONDUCTOR DEVICE INCLUDING ISOLATION LAYER 有权
标题翻译：包含隔离层的半导体器件

公开(公告)号：US20080173992A1

公开(公告)日：2008-07-24

申请号：US11778427

申请日：2007-07-16

申请人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl

发明人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl

IPC分类号： H01L21/00 , H01L23/02 , H01L23/495

CPC分类号： H01L23/49562 , H01L21/6836 , H01L23/49513 , H01L23/49575 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/04026 , H01L2224/05554 , H01L2224/274 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10253 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/45099 , H01L2224/05599

摘要： A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.

摘要翻译： 半导体器件包括载体，半导体芯片，其包括在第一面上的有源区域和施加到第二面上的单独的隔离层，以及将隔离层耦合到载体的粘合材料，第二面朝向载体。

6.

发明授权
Semiconductor device including isolation layer 有权
标题翻译：半导体器件包括隔离层

公开(公告)号：US08110906B2

公开(公告)日：2012-02-07

申请号：US11778427

申请日：2007-07-16

申请人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl

发明人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl

IPC分类号： H01L21/00 , H01L23/02 , H01L23/495

CPC分类号： H01L23/49562 , H01L21/6836 , H01L23/49513 , H01L23/49575 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/04026 , H01L2224/05554 , H01L2224/274 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10253 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/45099 , H01L2224/05599

摘要： A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.

摘要翻译： 半导体器件包括载体，半导体芯片，其包括在第一面上的有源区域和施加到第二面上的单独的隔离层，以及将隔离层耦合到载体的粘合材料，第二面朝向载体。

7.

发明授权
Semiconductor module 有权
标题翻译：半导体模块

公开(公告)号：US07705441B2

公开(公告)日：2010-04-27

申请号：US11682353

申请日：2007-03-06

申请人： Joachim Mahler , Reimund Engl , Thomas Behrens

发明人： Joachim Mahler , Reimund Engl , Thomas Behrens

IPC分类号： H01L23/31 , H01L23/02 , H01L21/00

CPC分类号： H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/26145 , H01L2224/27013 , H01L2224/2919 , H01L2224/32057 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/4911 , H01L2224/73265 , H01L2224/83051 , H01L2224/83191 , H01L2224/83192 , H01L2224/83365 , H01L2224/83385 , H01L2224/8385 , H01L2224/92247 , H01L2225/06555 , H01L2225/06575 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12044 , H01L2924/1301 , H01L2924/13033 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/10155 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012

摘要： A semiconductor module is disclosed. One embodiment provides a first semiconductor chip, a second semiconductor chip and a spacer. The first semiconductor chip has a depression at a first main surface. The spacer applied to the first main surface and at least partly fills the depression. The second semiconductor chip is applied to the spacer.

摘要翻译： 公开了一种半导体模块。一个实施例提供第一半导体芯片，第二半导体芯片和间隔物。第一半导体芯片在第一主表面具有凹陷。间隔件施加到第一主表面并且至少部分地填充凹陷。将第二半导体芯片应用于间隔件。

8.

发明申请
METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE COMPRISING SURFACE-MOUNTABLE FLAT EXTERNAL CONTACTS 有权
标题翻译：用于生产包含表面平面外部接触的功率半导体模块的方法

公开(公告)号：US20090093090A1

公开(公告)日：2009-04-09

申请号：US11867329

申请日：2007-10-04

申请人： Henrik Ewe , Stefan Landau , Klaus Schiess , Robert Bergmann , Alvin Wee Beng Tatt , Soon Lock Goh , Joachim Mahler , Boris Plikat , Reimund Engl

发明人： Henrik Ewe , Stefan Landau , Klaus Schiess , Robert Bergmann , Alvin Wee Beng Tatt , Soon Lock Goh , Joachim Mahler , Boris Plikat , Reimund Engl

IPC分类号： H01L21/56

CPC分类号： H01L23/3107 , H01L23/49524 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L24/24 , H01L24/80 , H01L24/82 , H01L2224/24051 , H01L2224/24226 , H01L2224/24246 , H01L2224/24998 , H01L2224/32245 , H01L2224/76155 , H01L2224/82007 , H01L2224/82039 , H01L2224/82102 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00

摘要： A method for producing a power semiconductor module having surface mountable flat external contact areas is disclosed. At least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the side edges of the semiconductor chip as far as the inner housing plane was a leaving free the source and gate contact areas on the top side of the semiconductor chip and also was partly leaving free the top sides of the corresponding external contacts.

摘要翻译： 公开了一种具有表面安装平坦的外部接触区域的功率半导体模块的制造方法。至少一个功率半导体芯片由其后侧固定在漏极外部触点上。绝缘层覆盖半导体芯片的侧边缘上方的顶侧，只要内壳平面离开半导体芯片的顶侧上的源极和栅极接触区域，并且还部分地释放出半导体芯片的顶侧相应的外部联系人。