公开(公告)号：US08991332B2

公开(公告)日：2015-03-31

申请号：US12394203

申请日：2009-02-27

申请人： Satheesh Kuppurao ,  David K. Carlson ,  Manish Hemkar ,  Andrew Lam ,  Errol Sanchez ,  Howard Beckford

发明人： Satheesh Kuppurao ,  David K. Carlson ,  Manish Hemkar ,  Andrew Lam ,  Errol Sanchez ,  Howard Beckford

IPC分类号： C23C16/46 ,  C23C16/52 ,  C23C16/44 ,  H01L21/67

CPC分类号： C23C16/46 ,  C23C16/4411 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。 腔表面的多于一个部分可以进行温度调制。

公开(公告)号：US08813538B2

公开(公告)日：2014-08-26

申请号：US13237144

申请日：2011-09-20

申请人： David K. Carlson ,  Satheesh Kuppurao

发明人： David K. Carlson ,  Satheesh Kuppurao

IPC分类号： G01N7/00 ,  G01N33/00

CPC分类号： G01N33/0016 ,  Y10T137/85978

摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.

摘要翻译： 公开了系统和方法，其包括例如使用加压的惰性参考气体来调节测试室中的样品气体的压力水平，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地测定样品气体的组成。 公开了许多其他方面。

公开(公告)号：US20140199785A1

公开(公告)日：2014-07-17

申请号：US13796169

申请日：2013-03-12

申请人： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

发明人： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

IPC分类号： H01L21/67 ,  H01L21/66

CPC分类号： C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

摘要翻译： 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US08772055B1

公开(公告)日：2014-07-08

申请号：US13796169

申请日：2013-03-12

申请人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

发明人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC分类号： H01L21/00 ,  B05C11/00 ,  H05B6/66

CPC分类号： C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

摘要翻译： 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US20120266819A1

公开(公告)日：2012-10-25

申请号：US13441382

申请日：2012-04-06

申请人： ERROL ANTONIO C. SANCHEZ ,  DAVID K. CARLSON ,  SATHEESH KUPPURAO

发明人： ERROL ANTONIO C. SANCHEZ ,  DAVID K. CARLSON ,  SATHEESH KUPPURAO

IPC分类号： C23C16/455 ,  C23C16/56

CPC分类号： C23C16/54 ,  C23C16/06 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67207

摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

摘要翻译： 提供了用于处理衬底的设备。 在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件， 所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体 基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从 处理室。

公开(公告)号：US20110217466A1

公开(公告)日：2011-09-08

申请号：US13109533

申请日：2011-05-17

申请人： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

发明人： David K. Carlson ,  Errol Antonio C. Sanchez ,  Satheesh Kuppurao

IPC分类号： C23C16/448

CPC分类号： C23C16/4482

摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

公开(公告)号：US07396743B2

公开(公告)日：2008-07-08

申请号：US10866471

申请日：2004-06-10

申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

公开(公告)号：US20080014350A1

公开(公告)日：2008-01-17

申请号：US11697937

申请日：2007-04-09

申请人： David Carlson ,  Errol Sanchez ,  Satheesh Kuppurao

发明人： David Carlson ,  Errol Sanchez ,  Satheesh Kuppurao

IPC分类号： C23C16/00

CPC分类号： C23C16/4482

摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

公开(公告)号：US20070170148A1

公开(公告)日：2007-07-26

申请号：US11336178

申请日：2006-01-20

申请人： Satheesh Kuppurao ,  David Carlson ,  Howard Beckford ,  Errol Sanchez

发明人： Satheesh Kuppurao ,  David Carlson ,  Howard Beckford ,  Errol Sanchez

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/461 ,  C03C15/00

CPC分类号： H01L21/02532 ,  C23C16/452 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02636

摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.

摘要翻译： 公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。 亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。

公开(公告)号：US09870919B2

公开(公告)日：2018-01-16

申请号：US13864849

申请日：2013-04-17

申请人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

发明人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/0262 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.