摘要:
In an exemplary hidden refresh method for a pseudo SRAM, a system clock is received. A duty-on period of the system clock signal is adapted for performing a data access operation such as write or read operation. A refresh clock signal subjected to the control of the system clock signal is generated. A duty-on period of the refresh clock signal is non-overlapped with the duty-on period of the system clock signal. A refresh control pulse then is triggered by a starting edge of the duty-on period of the refresh clock signal to activate a word line, for performing a refresh operation.
摘要:
An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.
摘要:
A DC/DC converter. In the DC/DC converter, a DC/DC conversion circuit provides an output voltage to a storage capacitor upon receiving an enable signal. First and second resistors are connected in series to produce a first voltage according to the output voltage. A Schmitt trigger is coupled to the first voltage to output a first control signal through an inverter when the first voltage is smaller than a second voltage and to output a second control signal through the inverter when the first voltage is higher than a third voltage. An oscillator is turned off upon receiving the first control signal such that the DC/DC conversion circuit stops providing the output voltage, and is turned on and outputs the enable signal upon receiving the second control signal such that the DC/DC conversion circuit provides the output voltage to the storage capacitor.
摘要:
A static random access memory (SRAM) has a plurality of SRAM cells, a first switch unit, a second switch unit, and a capacitor. During read/write operations of the SRAM cells, the first switch unit and the second switch unit are turned on so that two power terminals of the SRAM cells respectively electrically connect to VDD and VSS and that the capacitor electrically connects between VDD and VSS. When the SRAM cells are not accessed, the first switch unit and the second switch unit are turned off and the capacitor keeps a voltage gap between the two power terminals of the SRAM cells greater than a predetermined value.
摘要翻译:静态随机存取存储器(SRAM)具有多个SRAM单元,第一开关单元,第二开关单元和电容器。 在SRAM单元的读/写操作期间,第一开关单元和第二开关单元导通,使得SRAM单元的两个电源端子分别电连接到V DD和V SS 并且电容器在V DD和V SS之间电连接。 当SRAM单元未被访问时,第一开关单元和第二开关单元断开,并且电容器保持SRAM单元的两个电源端子之间的电压间隙大于预定值。
摘要:
An image correction apparatus for correcting an original image captured by a photographing device is provided. The image correction apparatus includes a storage and a texture mapping module. The storage therein stores mapping data sets associated with the photographing device. The invention is able to construct and utilize mapping data associated with a particular optical lens when used as part of the photographic device. The texture mapping module corrects an original captured image using a texture mapping procedure according to the appropriate mapping data to generate a corrected image. The texture mapping procedure may use mapping data in a polygon based approach to generate corrected images more efficiently.
摘要:
A shift register and a shift register are provided. The shift register comprises the switch circuit, the latch circuit, and the inverter circuit 170. The shift register set, by alternately-serially connecting two types of shift registers, can receive two clock signals and an initial pulse signal to control the output waveform. The output of the present stage shift register can be used to control the turn-on time of the nest stage shift register. Further, by changing the circuit driving signal from the dynamic signal to the static signal, the circuit can operate only when the signal is “0” or “1” without being affected by the signal rising time and the falling time so that the circuit can operate in a more stable status.
摘要:
A shift register and a shift register are provided. The shift register comprises the switch circuit, the latch circuit, and the inverter circuit 170. The shift register set, by alternately-serially connecting two types of shift registers, can receive two clock signals and an initial pulse signal to control the output waveform. The output of the present stage shift register can be used to control the turn-on time of the nest stage shift register. Further, by changing the circuit driving signal from the dynamic signal to the static signal, the circuit can operate only when the signal is “0” or “1” without being affected by the signal rising time and the falling time so that the circuit can operate in a more stable status.
摘要:
A method is provided for use on a wafer formed with a plurality of dice on each of which a memory device, such as a DRAM (dynamic random access memory) device to perform a burn-in operation on the memory device so as to test the reliability thereof. By this method, a plurality of pads are formed in the scribe lines that are used as reference marks in the cutting apart of the dice. These pads are used to transfer an externally generated burn-in enable signal and a DC bias voltage to each memory device. Since the pads for burn-in wiring are formed in the scribe lines, they will not take additional space on the dice where each memory device is formed. The burn-in operation is more convenient, quick, and cost-effective to implement.
摘要:
An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.
摘要:
In an exemplary hidden refresh method for a pseudo SRAM, a system clock is received. A duty-on period of the system clock signal is adapted for performing a data access operation such as write or read operation. A refresh clock signal subjected to the control of the system clock signal is generated. A duty-on period of the refresh clock signal is non-overlapped with the duty-on period of the system clock signal. A refresh control pulse then is triggered by a starting edge of the duty-on period of the refresh clock signal to activate a word line, for performing a refresh operation.