Abstract:
An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.
Abstract:
A cigar cutter mainly formed by a bottom sheet, a left blade, a right blade and an upper sheet. The four sheets are locked by a stud, while the left and right blade are movable with respective to the bottom sheet. The centers of these sheets have holes which are aligned. When a cigar passes through the hole, the two blades can move inwards to cut the cigar. A skilled design mechanism is formed in the four sheets so that as the two blades can be received within the two blades in a storage state. When it is desired to insert a cigar into the holes of the sheets, the two blades can be compressed inwards, and than the blades will resilient outwards by resilient forces of springs.
Abstract:
In accordance with the present invention, a method is provided for testing dynamic random access memory under wafer-level-burn-in that substantially can overcome the disadvantage of requiring at a manufacturing period and which even further increases with the increase of the memory capacity being expanded. In the embodiment, first of all, there are pluralities of word lines that are arranged in parallel. Generally word line driver means respectively driving the word lines and concludes word line test means for receiving a test signal, and further for producing an output signal. The layout of input bit-line to bit-line can be cross-arranged. Thus, the main feature of the present invention is mentioned that voltage for bit-line can be divided as even-numbered voltage and odd-numbered voltage for cross toggling. Especially, all of the tests can be carried out in the fabrication period of a semiconductor factory. Also, the semiconductor memory device of this invention overcomes the above-identified problem and numerous other disadvantages and deficiencies of the conventional technology.
Abstract:
An image correction apparatus for correcting an original image captured by a photographing device is provided. The image correction apparatus includes a storage and a texture mapping module. The storage therein stores mapping data sets associated with the photographing device. The invention is able to construct and utilize mapping data associated with a particular optical lens when used as part of the photographic device. The texture mapping module corrects an original captured image using a texture mapping procedure according to the appropriate mapping data to generate a corrected image. The texture mapping procedure may use mapping data in a polygon based approach to generate corrected images more efficiently.
Abstract:
A shift register and a shift register are provided. The shift register comprises the switch circuit, the latch circuit, and the inverter circuit 170. The shift register set, by alternately-serially connecting two types of shift registers, can receive two clock signals and an initial pulse signal to control the output waveform. The output of the present stage shift register can be used to control the turn-on time of the nest stage shift register. Further, by changing the circuit driving signal from the dynamic signal to the static signal, the circuit can operate only when the signal is “0” or “1” without being affected by the signal rising time and the falling time so that the circuit can operate in a more stable status.
Abstract:
A shift register and a shift register are provided. The shift register comprises the switch circuit, the latch circuit, and the inverter circuit 170. The shift register set, by alternately-serially connecting two types of shift registers, can receive two clock signals and an initial pulse signal to control the output waveform. The output of the present stage shift register can be used to control the turn-on time of the nest stage shift register. Further, by changing the circuit driving signal from the dynamic signal to the static signal, the circuit can operate only when the signal is “0” or “1” without being affected by the signal rising time and the falling time so that the circuit can operate in a more stable status.
Abstract:
A method is provided for use on a wafer formed with a plurality of dice on each of which a memory device, such as a DRAM (dynamic random access memory) device to perform a burn-in operation on the memory device so as to test the reliability thereof. By this method, a plurality of pads are formed in the scribe lines that are used as reference marks in the cutting apart of the dice. These pads are used to transfer an externally generated burn-in enable signal and a DC bias voltage to each memory device. Since the pads for burn-in wiring are formed in the scribe lines, they will not take additional space on the dice where each memory device is formed. The burn-in operation is more convenient, quick, and cost-effective to implement.
Abstract:
Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.
Abstract:
The present invention provides a film deposition system and method by combining a plurality of gas supplying apparatuses and a deposition apparatus being in communication with the plurality of gas supplying apparatuses. By means of respectively providing different types of vapor precursors with high concentration and high capacity into a process chamber of the deposition apparatus through the plurality of gas supplying apparatus, the deposition reaction is accelerated so as to improve the efficiency of film deposition. In an embodiment of the gas supplying apparatus, it utilizes a first gas for providing high pressure toward on a liquid surface of the precursor, thereby transporting the precursor into an atomizing and heating unit whereby the precursor is atomized and then is heated so as to form a high-concentration and high capacity vapor precursor transported by another carrier gas.
Abstract:
Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.