公开(公告)号：US09412715B2

公开(公告)日：2016-08-09

申请号：US14508736

申请日：2014-10-07

申请人： FUJITSU LIMITED

发明人： Kozo Shimizu ,  Seiki Sakuyama ,  Toshiya Akamatsu

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L21/50 ,  H01L25/065 ,  H01L23/31 ,  H01L23/538

CPC分类号： H01L24/81 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/5383 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16506 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81002 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/8142 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81805 ,  H01L2224/81893 ,  H01L2224/81931 ,  H01L2224/83815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083

摘要： A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.

摘要翻译： 一种半导体器件，包括：连接构件，包括形成在其主表面上的第一焊盘; 半导体芯片，其包括形成有第二焊盘的电路形成表面，所述芯片安装在所述连接构件上，使得所述电路形成表面面向所述主表面; 以及焊料凸块，其连接所述第一和第二焊盘，并且由含有Bi和Sn的金属制成，其中所述凸块包括邻近所述第二焊盘形成的第一界面层，邻近所述第一焊盘形成的第二界面层， 形成在与所述界面层中的任一个邻接的第一中间区域和与所述界面层中的另一个相邻地形成并与所述第一中间区域相邻形成的第二中间区域; 第一中间区域的双浓度高于Sn-浓度; 并且第二中间区域中的Sn浓度高于Bi浓度。

公开(公告)号：US09984993B2

公开(公告)日：2018-05-29

申请号：US15294508

申请日：2016-10-14

申请人： Advanced Semiconductor, Inc.

发明人： Min-Fong Shu ,  Yi-Hsiu Tseng ,  Kuan-Neng Chen ,  Shu-Chiao Kuo

IPC分类号： H01L23/00 ,  H01L23/13 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

摘要： A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

公开(公告)号：US20160240503A1

公开(公告)日：2016-08-18

申请号：US14622494

申请日：2015-02-13

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Min-Fong Shu ,  Yi-Hsiu TSENG ,  Kuan-Neng CHEN ,  Shu-Chiao KUO

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

摘要： The present disclosure relates to bonding structures useful in semiconductor packages and methods of manufacturing the same. In an embodiment, the bonding structure comprises a substrate, having a top surface and including at least one bonding pad, wherein each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface; and a semiconductor element including at least one pillar, wherein each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.

摘要翻译： 本公开涉及可用于半导体封装的结合结构及其制造方法。 在一个实施例中，接合结构包括具有顶表面并且包括至少一个焊盘的衬底，其中每个接合焊盘邻近衬底的顶表面设置并具有倾斜表面; 以及包括至少一个柱的半导体元件，其中每个柱结合到相应焊盘的倾斜表面的一部分，并且在所述柱的侧壁和相应的焊盘的倾斜表面之间形成间隙。

公开(公告)号：US20150247244A1

公开(公告)日：2015-09-03

申请号：US14634535

申请日：2015-02-27

申请人： IMEC VZW ,  GLOBALFOUNDRIES INC.

发明人： Eric Beyne ,  Joeri De Vos ,  Jaber Derakhshandeh ,  Luke England ,  George Vakanas

IPC分类号： C23C30/00

CPC分类号： C23C30/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/031 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/0518 ,  H01L2224/05563 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/13101 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13144 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48655 ,  H01L2224/48657 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48855 ,  H01L2224/48857 ,  H01L2224/81203 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85355 ,  H01L2224/85375 ,  H01L2224/85455 ,  H01L2224/85457 ,  Y10T428/12826 ,  Y10T428/12861 ,  Y10T428/12882 ,  Y10T428/1291 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/24917 ,  H01L2924/01005 ,  H01L2924/00014 ,  H01L2924/014

摘要： The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

摘要翻译： 本发明涉及一种具有至少一个主表面的基底，该至少一个主表面包括由覆盖层覆盖的至少一个非贵金属粘结着陆垫，从而将非贵金属粘合着陆垫与环境隔离。 该覆盖层包括合金，该合金为NiB或CoB，并且含有10％至5​​0％范围内的硼的原子浓度百分比。

公开(公告)号：US20150024555A1

公开(公告)日：2015-01-22

申请号：US14508736

申请日：2014-10-07

申请人： FUJITSU LIMITED

发明人： Kozo SHIMIZU ,  Seiki Sakuyama ,  Toshiya Akamatsu

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/5383 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16506 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81002 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/8142 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81805 ,  H01L2224/81893 ,  H01L2224/81931 ,  H01L2224/83815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083

摘要： A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.

摘要翻译： 一种半导体器件，包括：连接构件，包括形成在其主表面上的第一焊盘; 半导体芯片，其包括形成有第二焊盘的电路形成表面，所述芯片安装在所述连接构件上，使得所述电路形成表面面向所述主表面; 以及焊料凸块，其连接所述第一和第二焊盘，并且由含有Bi和Sn的金属制成，其中所述凸块包括邻近所述第二焊盘形成的第一界面层，邻近所述第一焊盘形成的第二界面层， 形成在与所述界面层中的任一个邻接的第一中间区域和与所述界面层中的另一个相邻地形成并与所述第一中间区域相邻形成的第二中间区域; 第一中间区域的双浓度高于Sn-浓度; 并且第二中间区域中的Sn浓度高于Bi浓度。

公开(公告)号：US09496238B2

公开(公告)日：2016-11-15

申请号：US14622494

申请日：2015-02-13

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Min-Fong Shu ,  Yi-Hsiu Tseng ,  Kuan-Neng Chen ,  Shu-Chiao Kuo

IPC分类号： H01L23/31 ,  H01L23/49 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

摘要： A bonding structure includes a substrate having a top surface and including at least one bonding pad. Each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface. A semiconductor element includes at least one pillar. Each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.

摘要翻译： 接合结构包括具有顶表面并且包括至少一个接合焊盘的基板。 每个接合焊盘设置成与衬底的顶表面相邻并且具有倾斜的表面。 半导体元件包括至少一个支柱。 每个支柱结合到对应的焊盘的倾斜表面的一部分，并且在柱的侧壁和相应的焊盘的倾斜表面之间形成间隙。

公开(公告)号：US20150137366A1

公开(公告)日：2015-05-21

申请号：US14610002

申请日：2015-01-30

申请人： International Business Machines Corporation

发明人： Gregory M. Fritz ,  Eric P. Lewandowski

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L24/17 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13179 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/1713 ,  H01L2224/17163 ,  H01L2224/7525 ,  H01L2224/75264 ,  H01L2224/81192 ,  H01L2224/81222 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/8146 ,  H01L2224/81466 ,  H01L2224/818 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/0541 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2224/81121 ,  H01L2924/00012 ,  H01L2224/757 ,  H01L2924/014 ,  H01L2224/05552

摘要： An array of bonding pads including a set of reactive materials is provided on a first substrate. The set of reactive materials is selected to be capable of ignition by magnetic heating induced by time-dependent magnetic field. The magnetic heating can be eddy current heating, hysteresis heating, and/or heating by magnetic relaxation processes. An array of solder balls on a second substrate is brought to contact with the array of bonding pads. A reaction is initiated in the set of magnetic materials by an applied magnetic field. Rapid release of heat during a resulting reaction of the set of reactive materials to form a reacted material melts the solder balls and provides boding between the first substrate and the second substrate. Since the magnetic heating can be localized, the heating and warpage of the substrate can be minimized during the bonding process.

摘要翻译： 包括一组反应性材料的焊盘阵列设置在第一衬底上。 通过由时间依赖磁场引起的磁加热，可以选择一组反应性材料。 磁加热可以是涡流加热，滞后加热和/或通过磁弛豫过程加热。 使第二基板上的焊球的阵列与焊盘的阵列接触。 通过施加的磁场在一组磁性材料中引发反应。 在一组反应性材料的反应期间，在形成反应的材料的反应中快速释放热量，熔化焊球并在第一基板和第二基板之间提供粘结。 由于磁加热可以被定位，所以在接合过程中可以最小化衬底的加热和翘曲。

公开(公告)号：US08456021B2

公开(公告)日：2013-06-04

申请号：US12954397

申请日：2010-11-24

申请人： Chien-Te Feng ,  Shih-Chin Lin

发明人： Chien-Te Feng ,  Shih-Chin Lin

IPC分类号： H01L21/31

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L23/481 ,  H01L23/4985 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81418 ,  H01L2224/8142 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/8146 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81473 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/83385 ,  H01L2224/85409 ,  H01L2224/85411 ,  H01L2224/85413 ,  H01L2224/85416 ,  H01L2224/85418 ,  H01L2224/8542 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85457 ,  H01L2224/8546 ,  H01L2224/85463 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2224/85473 ,  H01L2224/85476 ,  H01L2224/85478 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.

摘要翻译： 集成电路（IC）装置包括具有顶侧表面和与顶侧表面相对的底部表面的聚合物基板，从顶侧表面延伸到底部表面的多个通孔，以及多个底部金属焊盘 底部表面定位在多个通孔上。 具有包括多个接合焊盘的活动顶面和第二侧的至少一个IC管芯固定到顶侧表面。 接合特征耦合到多个接合焊盘，用于将多个接合焊盘中的相应接合焊盘连接到多个底部金属焊盘。 接合特征延伸到通孔中以接触底部金属焊盘。

公开(公告)号：US5830782A

公开(公告)日：1998-11-03

申请号：US678808

申请日：1996-07-12

申请人： John W. Smith ,  Thomas H. Distefano

发明人： John W. Smith ,  Thomas H. Distefano

IPC分类号： H01L21/20 ,  H01L21/60 ,  H01L23/12 ,  H01L23/36 ,  H01L23/48

CPC分类号： H01L21/4839 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/22 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/544 ,  H01L23/642 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H05K3/4084 ,  H01L2221/68327 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/05644 ,  H01L2224/13016 ,  H01L2224/13018 ,  H01L2224/13026 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13617 ,  H01L2224/13638 ,  H01L2224/13644 ,  H01L2224/1412 ,  H01L2224/16057 ,  H01L2224/16225 ,  H01L2224/17104 ,  H01L2224/29191 ,  H01L2224/45124 ,  H01L2224/48744 ,  H01L2224/73204 ,  H01L2224/7525 ,  H01L2224/753 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75822 ,  H01L2224/75824 ,  H01L2224/81007 ,  H01L2224/81091 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81825 ,  H01L2224/8183 ,  H01L2224/819 ,  H01L2224/83005 ,  H01L2224/83104 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01066 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/19043 ,  H01L2924/351 ,  H05K1/118 ,  H05K2201/0133 ,  H05K2201/0394 ,  H05K2201/0397 ,  H05K2201/09081 ,  H05K2201/091 ,  H05K2203/063 ,  H05K3/361

摘要： A method of making a microelectronic assembly includes bonding a plurality of lead connection sections arranged in a row to contacts of a microelectronic element such as a semiconductor chip having contacts in rows at the periphery of the chip. The leads have terminal sections secured to a dielectric support structure, and horizontally curved sections between the terminal regions and bond regions. After bonding, the dielectric support structure is lifted upwardly relative to the chip, so as to bend the leads into a vertically-extensive orientation. Partial straightening of the original horizontal curvature allows each lead to stretch and accommodate the vertical movement.

摘要翻译： 制造微电子组件的方法包括将布置成行的多个引线连接部分接合到微电子元件的触点，例如在芯片周边具有行的触点的半导体芯片。 引线具有固定到电介质支撑结构的端子部分，以及端子区域和接合区域之间的水平弯曲部分。 在接合之后，电介质支撑结构相对于芯片向上提升，以便将引线弯曲成垂直方向。 原始水平曲率的部分矫直允许每个导线拉伸并适应垂直运动。

公开(公告)号：US11749534B1

公开(公告)日：2023-09-05

申请号：US17957683

申请日：2022-09-30

申请人： Deca Technologies USA, Inc.

发明人： Robin Davis ,  Paul R. Hoffman ,  Clifford Sandstrom ,  Timothy L. Olson

IPC分类号： H01L21/48 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L21/4839 ,  H01L21/561 ,  H01L21/568 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81466 ,  H01L2224/81469 ,  H01L2224/81481 ,  H01L2224/81484

摘要： A method and related structure for a quad flat no-lead (QFN), dual flat no-lead (DFN) or small outline no-lead (SON) package without a leadframe. Disposing semiconductor chips face-up on a temporary carrier, disposing a first encapsulant layer around the semiconductor chip, the active layer and conductive stumps, forming a conductive layer and conductive contacts over the planar surface, disposing encapsulant over the first encapsulant layer, conductive layer and conductive contacts, forming a photoresist over the encapsulant with openings, forming conductive pads within the openings, forming a solderable metal system (SMS) or applying an organic solderability preservative (OSP) over the conductive pads, and cutting through the encapsulant around the chip to form the outline of a package.