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    Photoelectric conversion device and manufacturing method thereof
    1.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 有权
    光电转换装置及其制造方法

    公开(公告)号：US08772627B2

    公开(公告)日：2014-07-08

    申请号：US12848357

    申请日：2010-08-02

    申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satohiro Okamoto

    发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satohiro Okamoto

    IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/0368

    CPC分类号： H01L31/035209 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548

    摘要： To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.

    摘要翻译： 提供其特性得到充分改善的光电转换装置。 光电转换装置包括：第一电极; 具有表现出第一导电类型的半导体层的单元电池，具有光电转换效果的半导体层和表现出第二导电类型的半导体层; 和第二电极。 在具有光电转换效果的半导体层中，其粒径小于具有光电转换效果的半导体层的厚度的晶粒在具有光电转换效果的半导体层的厚度方向上排列 对具有第二导电类型的半导体层表现出第一导电类型的半导体层。

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08546811B2

    公开(公告)日：2013-10-01

    申请号：US13018879

    申请日：2011-02-01

    申请人： Hiromichi Godo ,  Yasuyuki Arai ,  Satohiro Okamoto ,  Mari Terashima ,  Eriko Nishida ,  Junpei Sugao

    发明人： Hiromichi Godo ,  Yasuyuki Arai ,  Satohiro Okamoto ,  Mari Terashima ,  Eriko Nishida ,  Junpei Sugao

    IPC分类号： H01L27/14

    CPC分类号： H01L29/7869

    摘要： An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

    摘要翻译： 本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。 半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及 绝缘层设置成与氧化物半导体层接触。 氧化物半导体层的侧表面与源电极或漏电极接触。 氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

    DISPLAY DEVICE AND DRIVING METHOD THEREOF
    3.
    发明申请
    DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
    显示装置及其驱动方法

    公开(公告)号：US20110063340A1

    公开(公告)日：2011-03-17

    申请号：US12877689

    申请日：2010-09-08

    申请人： Atsushi UMEZAKI ,  Satohiro Okamoto

    发明人： Atsushi UMEZAKI ,  Satohiro Okamoto

    IPC分类号： G09G5/10

    CPC分类号： G09G3/344 ,  G09G2310/061

    摘要： A new driving method of a display device that makes it possible to reduce power consumption and to improve display quality is proposed. A first gray scale is displayed in all pixels in a first initialization period, a second gray scale is displayed in all the pixels in a second initialization period, an objective image is displayed in a writing period, and the image is held in a holding period. Alternatively, an electrical history of a gray scale storage display element for displaying a number of gray scales is erased in the first initialization period and the second initialization period. Alternatively, a potential of a common electrode is changed in the first initialization period, the second initialization period, the writing period, and the holding period. Alternatively, a potential of a capacitor wiring is changed in synchronization with the potential of the common electrode.

    摘要翻译： 提出了一种能够降低功耗并提高显示质量的显示装置的新的驱动方法。 在第一初始化期间，在所有像素中显示第一灰度级，在第二初始化期间，在全部像素中显示第二灰阶，在写入期间显示目标图像，并且将图像保持在保持期间 。 或者，在第一初始化期间和第二初始化期间，擦除用于显示多个灰度级的灰度级存储显示元件的电历史。 或者，在第一初始化期间，第二初始化期间，写入期间和保持期间，改变公共电极的电位。 或者，与公共电极的电位同步地改变电容器配线的电位。

    Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus
    4.
    发明授权
    Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus 有权
    半导体衬底和半导体衬底制造装置的制造方法

    公开(公告)号：US07816232B2

    公开(公告)日：2010-10-19

    申请号：US12275809

    申请日：2008-11-21

    申请人： Akihisa Shimomura ,  Masaki Koyama ,  Satohiro Okamoto

    发明人： Akihisa Shimomura ,  Masaki Koyama ,  Satohiro Okamoto

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.

    摘要翻译： 目的在于提供一种均匀的半导体衬底，其中不良接合被降低。 另一个目的是以高产率制造半导体衬底。 第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

    METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 审中-公开
    制造半导体基板和半导体基板制造装置的方法

    公开(公告)号：US20110030901A1

    公开(公告)日：2011-02-10

    申请号：US12903527

    申请日：2010-10-13

    申请人： Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Satohiro OKAMOTO

    发明人： Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Satohiro OKAMOTO

    IPC分类号： B32B37/10

    CPC分类号： H01L21/76254

    摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.

    摘要翻译： 目的在于提供一种均匀的半导体衬底，其中不良接合被降低。 另一个目的是以高产率制造半导体衬底。 第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的特定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

    Liquid crystal display device and electronic device provided with the same
    9.
    发明授权
    Liquid crystal display device and electronic device provided with the same 有权
    液晶显示装置及具备该液晶显示装置的电子装置

    公开(公告)号：US07633089B2

    公开(公告)日：2009-12-15

    申请号：US12219014

    申请日：2008-07-15

    申请人： Atsushi Miyaguchi ,  Satohiro Okamoto

    发明人： Atsushi Miyaguchi ,  Satohiro Okamoto

    IPC分类号： H01L29/04

    CPC分类号： G02F1/13624 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/134318 ,  H01L27/124 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765

    摘要： A liquid crystal display device provided with a thin film transistor with excellent electrical characteristics and reduced off current, for which increase in manufacturing costs can be suppressed while suppressing reduction in yield. A thin film transistor includes a gate electrode provided over a substrate; a gate insulating film provided to cover the substrate and the gate electrode; a first island-shaped semiconductor layer and a second island-shaped semiconductor layer each formed as a stack of a microcrystalline semiconductor layer and a buffer layer with a depression on an upper surface thereof, over the gate electrode with the gate insulating film interposed therebetween; a conductive semiconductor layer; and a conductive layer provided on the conductive semiconductor layer. The conductive semiconductor layer is provided between the first island-shaped semiconductor layer and the second island-shaped semiconductor layer in contact with the gate insulating film.

    摘要翻译： 具有薄膜晶体管的液晶显示装置，其具有优异的电特性和减小的截止电流，从而可以抑制成品率的降低，从而可以抑制制造成本的增加。 薄膜晶体管包括设置在衬底上的栅电极; 设置为覆盖基板和栅电极的栅极绝缘膜; 第一岛状半导体层和第二岛状半导体层，其各自形成为微晶半导体层的堆叠和在其上表面上具有凹陷的缓冲层，栅极电极之间插入栅极绝缘膜; 导电半导体层; 以及设置在导电半导体层上的导电层。 导电半导体层设置在与栅极绝缘膜接触的第一岛状半导体层和第二岛状半导体层之间。