公开(公告)号：US10096540B2

公开(公告)日：2018-10-09

申请号：US13107075

申请日：2011-05-13

申请人： KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang ,  JaeHyun Lee

发明人： KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang ,  JaeHyun Lee

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

摘要： A semiconductor device has a semiconductor die with an insulation layer formed over an active surface of the semiconductor die. A conductive layer is formed over the first insulating layer electrically connected to the active surface. A plurality of conductive pillars is formed over the conductive layer. A plurality of dummy pillars is formed over the first insulating layer electrically isolated from the conductive layer and conductive pillars. The semiconductor die is mounted to a substrate. A height of the dummy pillars is greater than a height of the conductive pillars to maintain the standoff distance between the semiconductor die and substrate. The dummy pillars can be formed over the substrate. The dummy pillars are disposed at corners of the semiconductor die and a central region of the semiconductor die. A mold underfill material is deposited between the semiconductor die and substrate.

公开(公告)号：US20130069221A1

公开(公告)日：2013-03-21

申请号：US13234366

申请日：2011-09-16

申请人： JaeHyun Lee ,  KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang

发明人： JaeHyun Lee ,  KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05186 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11903 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3841 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0665

摘要： A semiconductor device has a semiconductor die mounted to a substrate. A plurality of conductive pillars is formed over a semiconductor die. A plurality of conductive protrusions is formed over the conductive pillars. Bumps are formed over the conductive protrusions and conductive pillars. Alternatively, the conductive protrusions are formed over the substrate. A conductive layer is formed over the substrate. The semiconductor die is mounted to the substrate by reflowing the bumps at a temperature that is less than a melting point of the conductive pillars and conductive protrusions to metallurgically and electrically connect the bumps to the conductive layer while maintaining a fixed offset between the semiconductor die and substrate. The fixed offset between the semiconductor die and substrate is determined by a height of the conductive pillars and a height of the conductive protrusions. A mold underfill material is deposited between the semiconductor die and substrate.

摘要翻译： 半导体器件具有安装到衬底的半导体管芯。 在半导体管芯上形成多个导电柱。 多个导电突起形成在导电柱上。 凸起形成在导电突起和导电柱上。 或者，导电突起形成在衬底上。 导电层形成在衬底上。 半导体管芯通过在小于导电柱和导电突起的熔点的温度下回流焊接而安装到衬底上，以将凸点冶金和电连接到导电层，同时保持半导体管芯和半导体管芯之间的固定偏移 基质。 半导体管芯和衬底之间的固定偏移由导电柱的高度和导电突起的高度决定。 模具底部填充材料沉积在半导体管芯和衬底之间。

公开(公告)号：US20120286418A1

公开(公告)日：2012-11-15

申请号：US13107075

申请日：2011-05-13

申请人： KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang ,  JaeHyun Lee

发明人： KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang ,  JaeHyun Lee

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L23/49811 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3192 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0239 ,  H01L2224/03013 ,  H01L2224/0332 ,  H01L2224/0343 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/2929 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81007 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01013 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor die with an insulation layer formed over an active surface of the semiconductor die. A conductive layer is formed over the first insulating layer electrically connected to the active surface. A plurality of conductive pillars is formed over the conductive layer. A plurality of dummy pillars is formed over the first insulating layer electrically isolated from the conductive layer and conductive pillars. The semiconductor die is mounted to a substrate. A height of the dummy pillars is greater than a height of the conductive pillars to maintain the standoff distance between the semiconductor die and substrate. The dummy pillars can be formed over the substrate. The dummy pillars are disposed at corners of the semiconductor die and a central region of the semiconductor die. A mold underfill material is deposited between the semiconductor die and substrate.

摘要翻译： 半导体器件具有形成在半导体管芯的有效表面上的绝缘层的半导体管芯。 导电层形成在与主动表面电连接的第一绝缘层上。 多个导电柱形成在导电层上。 在与导电层和导电柱电隔离的第一绝缘层上形成多个虚拟柱。 将半导体管芯安装到基板上。 虚拟柱的高度大于导电柱的高度，以保持半导体管芯和衬底之间的间隔距离。 虚拟柱可以形成在衬底上。 虚拟柱设置在半导体管芯的角部和半导体管芯的中心区域。 模具底部填充材料沉积在半导体管芯和衬底之间。

公开(公告)号：US20110269506A1

公开(公告)日：2011-11-03

申请号：US12945746

申请日：2010-11-12

申请人： Kyungdong CHOI ,  Seongwon Park

发明人： Kyungdong CHOI ,  Seongwon Park

IPC分类号： H04W4/00

CPC分类号： H04M1/7253

摘要： A portable multimedia playback apparatus, a portable multimedia playback system, and a method for controlling operations thereof are disclosed. The method for controlling an operation of the portable multimedia playback apparatus having a display unit for displaying an image corresponding to a played-back multimedia content and a controller for outputting a display signal to the display unit to display the image corresponding to the played-back multimedia content on the display unit, includes receiving a signal from a mobile terminal capable of executing a phone application, determining status information about the mobile terminal from information included in the received signal, and outputting a display signal from the controller to the display unit such that an image corresponding to the determined status information is displayed on the display unit.

摘要翻译： 公开了便携式多媒体播放装置，便携式多媒体播放系统及其操作控制方法。 用于控制便携式多媒体播放装置的操作的方法具有用于显示对应于播放的多媒体内容的图像的显示单元和用于向显示单元输出显示信号的控制器，以显示对应于播放的多媒体内容的图像 显示单元上的多媒体内容包括从能够执行电话应用的移动终端接收信号，从包括在接收信号中的信息确定关于移动终端的状态信息，并将显示信号从控制器输出到显示单元，如 在显示单元上显示与所确定的状态信息相对应的图像。

公开(公告)号：US09148502B2

公开(公告)日：2015-09-29

申请号：US12945746

申请日：2010-11-12

申请人： Kyungdong Choi ,  Seongwon Park

发明人： Kyungdong Choi ,  Seongwon Park

IPC分类号： H04M1/00 ,  H04M1/725

CPC分类号： H04M1/7253

摘要： A portable multimedia playback apparatus, a portable multimedia playback system, and a method for controlling operations thereof are disclosed. The method for controlling an operation of the portable multimedia playback apparatus having a display unit for displaying an image corresponding to a played-back multimedia content and a controller for outputting a display signal to the display unit to display the image corresponding to the played-back multimedia content on the display unit, includes receiving a signal from a mobile terminal capable of executing a phone application, determining status information about the mobile terminal from information included in the received signal, and outputting a display signal from the controller to the display unit such that an image corresponding to the determined status information is displayed on the display unit.

摘要翻译： 公开了便携式多媒体播放装置，便携式多媒体播放系统及其操作控制方法。 用于控制便携式多媒体播放装置的操作的方法具有用于显示对应于播放的多媒体内容的图像的显示单元和用于向显示单元输出显示信号的控制器，以显示对应于播放的多媒体内容的图像 显示单元上的多媒体内容包括从能够执行电话应用的移动终端接收信号，从包括在接收信号中的信息确定关于移动终端的状态信息，并将显示信号从控制器输出到显示单元，如 在显示单元上显示与所确定的状态信息相对应的图像。

公开(公告)号：US09230933B2

公开(公告)日：2016-01-05

申请号：US13234366

申请日：2011-09-16

申请人： JaeHyun Lee ,  KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang

发明人： JaeHyun Lee ,  KyungHoon Lee ,  SeongWon Park ,  KiYoun Jang

IPC分类号： H01L21/44 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05186 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11903 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3841 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0665

摘要： A semiconductor device has a semiconductor die mounted to a substrate. A plurality of conductive pillars is formed over a semiconductor die. A plurality of conductive protrusions is formed over the conductive pillars. Bumps are formed over the conductive protrusions and conductive pillars. Alternatively, the conductive protrusions are formed over the substrate. A conductive layer is formed over the substrate. The semiconductor die is mounted to the substrate by reflowing the bumps at a temperature that is less than a melting point of the conductive pillars and conductive protrusions to metallurgically and electrically connect the bumps to the conductive layer while maintaining a fixed offset between the semiconductor die and substrate. The fixed offset between the semiconductor die and substrate is determined by a height of the conductive pillars and a height of the conductive protrusions. A mold underfill material is deposited between the semiconductor die and substrate.

摘要翻译： 半导体器件具有安装到衬底的半导体管芯。 在半导体管芯上形成多个导电柱。 多个导电突起形成在导电柱上。 凸起形成在导电突起和导电柱上。 或者，导电突起形成在衬底上。 导电层形成在衬底上。 半导体管芯通过在小于导电柱和导电突起的熔点的温度下回流焊接而安装到衬底上，以将凸点冶金和电连接到导电层，同时保持半导体管芯和半导体管芯之间的固定偏移 基质。 半导体管芯和衬底之间的固定偏移由导电柱的高度和导电突起的高度决定。 模具底部填充材料沉积在半导体管芯和衬底之间。