利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

64 条记录 (耗时 0.051 秒)

    Method of manufacturing an adaptive AIGaN buffer layer
    7.
    发明授权
    Method of manufacturing an adaptive AIGaN buffer layer 有权
    制造自适应AIGaN缓冲层的方法

    公开(公告)号：US07485512B2

    公开(公告)日：2009-02-03

    申请号：US11474431

    申请日：2006-06-26

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri ,  Elif Berkman

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri ,  Elif Berkman

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

    摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

    Gallium nitride based high-electron mobility devices
    8.
    发明授权
    Gallium nitride based high-electron mobility devices 有权
    基于氮化镓的高电子迁移率器件

    公开(公告)号：US07326971B2

    公开(公告)日：2008-02-05

    申请号：US11147341

    申请日：2005-06-08

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    摘要翻译： 异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Method of manufacturing gallium nitride based high-electron mobility devices
    9.
    发明授权
    Method of manufacturing gallium nitride based high-electron mobility devices 有权
    制造氮化镓基高电子迁移率器件的方法

    公开(公告)号：US07364988B2

    公开(公告)日：2008-04-29

    申请号：US11147342

    申请日：2005-06-08

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    摘要翻译： 异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
    10.
    发明授权
    Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby 有权

    公开(公告)号：US07095062B2

    公开(公告)日：2006-08-22

    申请号：US11074485

    申请日：2005-03-08

    申请人： Kevin J. Linthicum ,  Thomas Gehrke ,  Robert F. Davis

    发明人： Kevin J. Linthicum ,  Thomas Gehrke ,  Robert F. Davis

    IPC分类号： H01L29/12

    CPC分类号： H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

    摘要： A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.