公开(公告)号：US08708390B2

公开(公告)日：2014-04-29

申请号：US13600075

申请日：2012-08-30

申请人： Osamu Kurogi ,  Tsuyoshi Sugihara ,  Kohya Nakagawa ,  Kuniaki Nagao ,  Sakayu Terada ,  Miho Kowaki ,  Akira Iyoshi ,  Shigeaki Watanabe

发明人： Osamu Kurogi ,  Tsuyoshi Sugihara ,  Kohya Nakagawa ,  Kuniaki Nagao ,  Sakayu Terada ,  Miho Kowaki ,  Akira Iyoshi ,  Shigeaki Watanabe

IPC分类号： B62D25/02 ,  B62D25/20

CPC分类号： B62D25/02 ,  B62D25/088 ,  B62D25/2027 ,  Y10T29/49622

摘要： In a vehicle-body structure of a vehicle which comprises vehicle-body forming members forming a closed-section portion and having a dent portion which dents toward an inside of the closed-section portion, and a reinforcing member provided in the closed-section portion and joined to the vehicle-body forming members, a joint portion of the vehicle-body forming members and the reinforcing member includes a rigid joint portion where the vehicle-body forming members and the reinforcing member are joined with a direct contact thereof and a flexible joint portion where the vehicle-body forming members and the reinforcing member are joined via a damping member provided therebetween, and this joint portion is provided at or in the vicinity of the dent portion.

摘要翻译： 一种车辆的车体结构，其特征在于，具备车身形成部件，所述车身形成部件形成为封闭部分，并且具有朝向所述封闭部分的内侧凹陷的凹陷部分;以及加强部件，设置在所述封闭部分部分中 并且车身形成构件的接合部和加强构件的接合部包括刚性接合部，其中车体形成构件和加强构件与其直接接触接合，并且柔性 车体形成构件和加强构件经由设置在其间的阻尼构件接合的接合部，并且该接合部设置在凹部处或附近。

公开(公告)号：US20130320818A1

公开(公告)日：2013-12-05

申请号：US13985780

申请日：2011-04-18

申请人： Takuya Oga ,  Masaki Kato ,  Tsuyoshi Sugihara

发明人： Takuya Oga ,  Masaki Kato ,  Tsuyoshi Sugihara

IPC分类号： H01L25/07 ,  H02K11/00 ,  H02M7/537

CPC分类号： H01L25/07 ,  B60L11/1803 ,  B60L15/007 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3701 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48699 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H02K11/33 ,  H02M7/537 ,  Y02T10/645 ,  Y02T10/7005 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.

摘要翻译： 提供一种半导体器件，包括：通过焊料（61）与第一基板（11）接合的第一MOS-FET（21）; 通过焊料（64）与第二基板（12）接合的第二MOS-FET（22）; 连接所述第一基板（11）和所述第二MOS-FET（22）的第一引线（31）; 以及连接所述第二MOS-FET（22）的第二引线（32）和向外部施加流过MOS-FET（21,22）的电流和电流通路构件（13）。 第二基板（12）比两个引线（31,32）更刚性，边界线（DD）与第二基板（12）相交而不与两个引线（31,32）相交，边界线包括一个 两个MOS-FET（21,22）沿着两个MOS-FET（21,22）彼此相对的方向彼此相对延伸的间隙部分（52）。

公开(公告)号：US20080017903A1

公开(公告)日：2008-01-24

申请号：US11822470

申请日：2007-07-06

申请人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

发明人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

IPC分类号： H01L31/119

CPC分类号： H01L27/10873 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/76235 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894

摘要： The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

摘要翻译： 本发明的制造方法包括以下步骤：在半导体衬底的主表面上设置氮化物膜; 提供上部沟槽，其中所述氮化物膜用作掩模; 用引入其中的氧化膜填充上沟槽; 去除所述氧化物膜以暴露所述上部沟槽的底部的至少一部分并且允许所述氧化膜的其余部分用作侧壁; 在所述上沟槽的底部提供下沟槽，所述侧壁用作掩模; 并且具有保留其侧壁的上沟槽，在上沟槽和下沟槽中提供氧化膜。 这可以提供半导体器件制造方法和半导体器件，以防止接触在互连过程中穿透器件。

公开(公告)号：US07243984B2

公开(公告)日：2007-07-17

申请号：US11126149

申请日：2005-05-11

申请人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

发明人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

IPC分类号： B62D25/20

CPC分类号： B62D25/20 ,  B60R13/083 ,  B62D25/2036

摘要： In a floor panel structure of a vehicle body in which a floor of an automotive vehicle is formed by a floor panel coupled to a plurality of frame members extending in substantially longitudinal and width directions of the vehicle, there are provided a panel area formed by being enclosed at least by the frame members, a heavy-weight area located at a substantially central portion of the panel area, and a peripheral area located substantially around the heavy-weight area, wherein the heavy-weight area is configured so as to be heavier than the peripheral area. Accordingly, the vibration energy transmitted from the frame members to the floor panel can be reduced and thereby the acoustic emission generated from the floor panel can be reduced.

摘要翻译： 在车身的地板面板结构中，其中机动车辆的地板由与在车辆的大致纵向和宽度方向上延伸的多个框架构件联接的地板镶板形成，提供了一种面板区域， 至少被框架构件封闭，位于面板区域的基本中心部分的重型区域和基本上围绕重型区域设置的周边区域，其中重型区域被配置为更重 比外围区域。 因此，可以减少从框架构件传递到地板面板的振动能量，从而可以减少从地板镶板产生的声发射。

公开(公告)号：US20050285535A1

公开(公告)日：2005-12-29

申请号：US11167116

申请日：2005-06-28

申请人： Katumi Sugaya ,  Tsuyoshi Sugihara ,  Yoshikazu Suzuki

发明人： Katumi Sugaya ,  Tsuyoshi Sugihara ,  Yoshikazu Suzuki

IPC分类号： H01J13/46 ,  H01J17/04 ,  H01J61/86 ,  H01J61/88 ,  H05B41/16 ,  H05B41/282 ,  H05B41/288 ,  H05B41/292

CPC分类号： H01J61/86 ,  H01J61/20 ,  H05B41/2882 ,  H05B41/2928 ,  Y02B20/208

摘要： It is an object of the present invention to provide a high pressure discharge lamp lighting apparatus, has a structure to control decrease of illuminance on a screen which is thought to be a cause of wear of an anode in an early stage of the life span. The high pressure discharge lamp lighting apparatus has a high pressure discharge lamp in which a pair of electrodes is arranged so as to face each other at an interval of 2 mm or less in an arc tube which is made of quartz glass, and mercury of 0.16 mg/mm3 or more, rare gas, and halogen of 1×10−6 to 1×10−2 μmol/mm3 is enclosed, and a power supply apparatus supplying direct current to the discharge lamp, wherein the power supply apparatus superimposes an alternating component on the direct current and impress the superimposed current to the discharge lamp.

摘要翻译： 本发明的目的是提供一种高压放电灯点亮装置，其具有控制屏幕上照度降低的结构，这被认为是寿命早期的阳极磨损的原因。 高压放电灯点灯装置具有高压放电灯，其中一对电极在由石英玻璃制成的电弧管中以2mm或更小的间隔彼此相对地布置，并且汞为0.16 mg / mm 3或更多，稀有气体和1×10 -6至1×10 -2μmol/ mm 3的卤素， SUP>，以及向放电灯提供直流电的电源装置，其中电源装置将交流分量叠加在直流电上，并将叠加的电流施加到放电灯。

公开(公告)号：US20050255641A1

公开(公告)日：2005-11-17

申请号：US11187893

申请日：2005-07-25

申请人： Tsuyoshi Sugihara

发明人： Tsuyoshi Sugihara

IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/088 ,  H01L27/10 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/338 ,  H01L29/745 ,  H01L29/76

CPC分类号： H01L29/6659 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823481 ,  H01L27/1052 ,  H01L29/665

摘要： It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard mask. A gate electrode (3) is formed by etching using a hard mask as a mask and the hard mask remains on an upper surface of the gate electrode (3) at a subsequent step. In the meantime, the upper surface of the gate electrode (3) can be therefore prevented from being unnecessarily etched. The hard mask is removed after ion implantation for forming a source-drain region. Consequently, the influence of the removal of the hard mask on a characteristic of a semiconductor device can be suppressed. In that case, moreover, a surface of a side wall (4) is also etched by a thickness of (d) so that an exposure width of an upper surface of the source-drain region is increased. After the removal of the hard mask, it is easy to salicide the gate electrode (3) and to form a contact on the gate electrode (3).

公开(公告)号：US06905434B2

公开(公告)日：2005-06-14

申请号：US10459548

申请日：2003-06-12

申请人： Tsuyoshi Sugihara ,  Toshio Yamaguchi ,  Kazuo Oguri

发明人： Tsuyoshi Sugihara ,  Toshio Yamaguchi ,  Kazuo Oguri

IPC分类号： F16H3/66 ,  F16H3/62

CPC分类号： F16H3/663 ,  F16H2200/0052 ,  F16H2200/201 ,  F16H2200/2043 ,  F16H2200/2097

摘要： A first planetary gear unit is arranged to convert an input rotation from an input shaft to an output rotation whose speed is lower than that of the input rotation. A first unit including second and third planetary gear units is arranged between the first planetary gear unit and the output shaft. The first unit manages the first planetary gear unit's output rotation and provides the output shaft with seven types of rotation which correspond to 6-forward speed and one reverse positions. A second unit is arranged between the first planetary gear unit and the first unit to manage a power transmission therebetween. One of the second and third planetary gear units is of a double ring type, each being meshed with the sun gear and inside and outside ring gears, and a pinion carrier carrying the pinions. The pinion carrier is connected to the output shaft to rotate therewith.

摘要翻译： 第一行星齿轮单元被布置成将来自输入轴的输入旋转转换成其速度低于输入旋转速度的输出旋转。 包括第二和第三行星齿轮单元的第一单元布置在第一行星齿轮单元和输出轴之间。 第一单元管理第一行星齿轮单元的输出旋转，并且向输出轴提供七种类型的旋转，其对应于6前进速度和一个倒档位置。 第二单元布置在第一行星齿轮单元和第一单元之间以管理它们之间的动力传递。 第二和第三行星齿轮单元中的一个是双环型的，每个都与太阳齿轮和内外齿圈啮合，并且承载小齿轮。 小齿轮架与输出轴相连以与其一起转动。

公开(公告)号：US06849919B2

公开(公告)日：2005-02-01

申请号：US10136404

申请日：2002-05-02

申请人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

发明人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

IPC分类号： H01L21/8247 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/00

CPC分类号： H01L27/10873 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/76235 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894

摘要： The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

摘要翻译： 本发明的制造方法包括以下步骤：在半导体衬底的主表面上设置氮化物膜; 提供上部沟槽，其中所述氮化物膜用作掩模; 用引入其中的氧化膜填充上沟槽; 去除所述氧化物膜以暴露所述上部沟槽的底部的至少一部分并且允许所述氧化膜的其余部分用作侧壁; 在所述上沟槽的底部提供下沟槽，所述侧壁用作掩模; 并且具有保留其侧壁的上沟槽，在上沟槽和下沟槽中提供氧化膜。 这可以提供半导体器件制造方法和半导体器件，以防止接触在互连过程中穿透器件。

公开(公告)号：US08967672B2

公开(公告)日：2015-03-03

申请号：US13600085

申请日：2012-08-30

申请人： Osamu Kurogi ,  Tsuyoshi Sugihara ,  Kohya Nakagawa ,  Kuniaki Nagao ,  Sakayu Terada ,  Miho Kowaki ,  Akira Iyoshi ,  Shigeaki Watanabe

发明人： Osamu Kurogi ,  Tsuyoshi Sugihara ,  Kohya Nakagawa ,  Kuniaki Nagao ,  Sakayu Terada ,  Miho Kowaki ,  Akira Iyoshi ,  Shigeaki Watanabe

IPC分类号： B62D25/20 ,  B62D21/11 ,  B62D25/08

CPC分类号： B62D25/2027 ,  B62D21/11 ,  B62D25/087 ,  B62D25/20 ,  Y10T29/49622

摘要： In a vehicle-body structure of a vehicle, where suspension forming members are attached to a vehicle body, there are provided a first face portion, through which the suspension forming member extends, a second face portion provided to face to the first face portion, and a support member provided between the first face portion and the second face portion and supporting the suspension forming members, and the support member is joined to said second face portion via a reinforcing member which is formed integrally with the support member or formed separately from the support member. Accordingly, vibrations of the support member can be properly restrained.

摘要翻译： 在悬架形成构件安装在车身上的车辆的车体结构中，设置有悬架形成构件延伸的第一面部，与第一面部相对设置的第二面部， 以及支撑构件，其设置在所述第一面部和所述第二面部之间并支撑所述悬架形成构件，并且所述支撑构件经由与所述支撑构件一体形成或与所述第二面部分分开形成的加强构件接合到所述第二面部 支持会员 因此，可以适当地抑制支撑构件的振动。

公开(公告)号：US20070269949A1

公开(公告)日：2007-11-22

申请号：US11822467

申请日：2007-07-06

申请人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

发明人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

IPC分类号： H01L21/336

CPC分类号： H01L27/10873 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/76235 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894

摘要： The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

摘要翻译： 本发明的制造方法包括以下步骤：在半导体衬底的主表面上设置氮化物膜; 提供上部沟槽，其中所述氮化物膜用作掩模; 用引入其中的氧化膜填充上沟槽; 去除所述氧化物膜以暴露所述上部沟槽的底部的至少一部分并且允许所述氧化膜的其余部分用作侧壁; 在所述上沟槽的底部提供下沟槽，所述侧壁用作掩模; 并且具有保留其侧壁的上沟槽，在上沟槽和下沟槽中提供氧化膜。 这可以提供半导体器件制造方法和半导体器件，以防止接触在互连过程中穿透器件。