公开(公告)号：US20120269987A1

公开(公告)日：2012-10-25

申请号：US13534366

申请日：2012-06-27

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： C23C18/54 ,  C23C16/06 ,  B05D5/12

CPC分类号： H01L21/7685 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1844 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76879

摘要： An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.

摘要翻译： 提供了一种用于在受控环境中处理衬底以使薄铜种子层在铜互连的金属阻挡层的表面上沉积的集成系统。 该系统包括实验室环境转移室，真空转移室，用于清洁下面金属的金属氧化物的暴露表面的真空处理模块，用于沉积金属阻挡层的真空处理模块和受控环境转移 室内装有惰性气体，其中至少一个受控环境的过程模块耦合到受控环境的传送室。 此外，该系统包括用于在金属阻挡层的表面上沉积铜籽晶层的薄层的无电铜沉积工艺模块。

公开(公告)号：US20110306203A1

公开(公告)日：2011-12-15

申请号：US13218035

申请日：2011-08-25

申请人： Yezdi Dordi ,  John M. Boyd ,  Fritz C. Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon

发明人： Yezdi Dordi ,  John M. Boyd ,  Fritz C. Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon

IPC分类号： H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.

摘要翻译： 提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。 含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。 钌区介于第一阻挡层和氧化钌区之间。 钌氧化物区位于钌区和富钌区之间。

公开(公告)号：US07875554B2

公开(公告)日：2011-01-25

申请号：US12044537

申请日：2008-03-07

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US20100239767A1

公开(公告)日：2010-09-23

申请号：US12790558

申请日：2010-05-28

申请人： Yezdi Dordi ,  William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Aleksander Owczarz

发明人： Yezdi Dordi ,  William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Aleksander Owczarz

IPC分类号： B05D3/00

CPC分类号： H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

摘要翻译： 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：US20100108491A1

公开(公告)日：2010-05-06

申请号：US12683995

申请日：2010-01-07

申请人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

IPC分类号： H05F3/00

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

摘要： A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.

摘要翻译： 提供了一种用于从衬底去除金属氧化物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除金属氧化物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将空穴场施加到空腔，以从惰性气体和处理气体产生等离子体。

公开(公告)号：US07662253B2

公开(公告)日：2010-02-16

申请号：US11237457

申请日：2005-09-27

申请人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.

摘要翻译： 公开了一种从衬底生成用于去除金属氧化物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以去除金属氧化物。

公开(公告)号：US20090162537A1

公开(公告)日：2009-06-25

申请号：US12334462

申请日：2008-12-13

申请人： Artur KOLICS ,  Shijian LI ,  Tiruchirapalli ARUNAGIRI ,  William THIE

发明人： Artur KOLICS ,  Shijian LI ,  Tiruchirapalli ARUNAGIRI ,  William THIE

IPC分类号： B05D3/10 ,  C11D1/66 ,  B08B3/08 ,  B08B1/00

CPC分类号： H05K3/0085 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02068 ,  H01L21/76849 ,  H01L21/76861

摘要： One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.

摘要翻译： 本发明的一个实施例是一种制造集成电路的方法。 该方法包括提供具有金属和电介质镶嵌金属化层并且基本上在金属上沉积盖的基板。 在沉积盖之后，用包含胺的溶液清洗基底以提供7至约13的清洁溶液的pH。本发明的另一个实施方案是清洁基底的方法。 本发明的另一个实施方案是用于清洁溶液的制剂。

公开(公告)号：US20080254621A1

公开(公告)日：2008-10-16

申请号：US11735984

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： H01L21/44 ,  B05C11/11 ,  B05C13/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US07358186B2

公开(公告)日：2008-04-15

申请号：US10735216

申请日：2003-12-12

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44 ,  B05C5/12

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US20080085370A1

公开(公告)日：2008-04-10

申请号：US11539155

申请日：2006-10-05

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： B05D1/18 ,  B05C3/00

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。