公开(公告)号：US20060079027A1

公开(公告)日：2006-04-13

申请号：US10514471

申请日：2003-05-16

申请人： Kohei Yamada ,  Yasuharu Ichinose ,  Hiroyuki Nagase

发明人： Kohei Yamada ,  Yasuharu Ichinose ,  Hiroyuki Nagase

IPC分类号： H01L21/48 ,  H01L21/44 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L21/4857 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/49816 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20752 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401

摘要： A manufacturing method of a thin and small-sized semiconductor device, which is integrated into an electronic instrument. A silicon wafer is prepared, and oxide films are formed on the main face and the rear face of the wafer. An insulating film is selectively formed on the main face of the wafer to make through holes. Metal-laminated films are formed on the oxide films on the bottoms of the through holes, and further first and second metal films are formed on the metal-laminated films to form metal pedestals. Next, a semiconductor chip wherein a diode is formed is fixed onto the main face of one of the metal pedestals through one electrode of the chips, and the other electrode is connected to the other of the metal pedestals through an electroconductive wire. Next, the semiconductor chip, the wire and so on are covered with an insulating resin layer, and then the silicon wafer and the oxide film are removed so that the oxide film stuck onto the rear face of the sealant remains. The oxide film on the rear face of the resin layer is etched and removed, and a metal plating film is formed on the surfaces of the metal pedestals exposed to the rear face of the resin layer. The resin layer is then cut lengthwise and breadthwise to manufacture semiconductor devices.

摘要翻译： 集成在电子仪器中的薄型和小型半导体器件的制造方法。 制备硅晶片，并且在晶片的主面和背面上形成氧化物膜。 在晶片的主面上选择性地形成绝缘膜，以形成通孔。 在通孔的底部的氧化物膜上形成金属层叠膜，并且在金属层叠膜上形成另外的第一金属膜和第二金属膜，以形成金属基座。 接下来，通过芯片的一个电极将形成有二极管的半导体芯片固定在一个金属基座的主面上，另一个电极通过导电线与另一个金属基座连接。 接下来，半导体芯片，导线等被绝缘树脂层覆盖，然后去除硅晶片和氧化物膜，使得粘附在密封剂背面上的氧化膜残留。 蚀刻除去树脂层背面的氧化膜，在暴露于树脂层的背面的金属基座的表面上形成金属镀膜。 然后沿长度方向和宽度方向切割树脂层以制造半导体器件。

公开(公告)号：US07023027B2

公开(公告)日：2006-04-04

申请号：US10294619

申请日：2002-11-15

申请人： Toshiya Teramae ,  Junichi Saeki ,  Yasuharu Ichinose ,  Shuichi Suzuki

发明人： Toshiya Teramae ,  Junichi Saeki ,  Yasuharu Ichinose ,  Shuichi Suzuki

IPC分类号： H01L29/861 ,  H01L29/88

CPC分类号： H01L23/3185 ,  H01L23/3114 ,  H01L24/10 ,  H01L24/48 ,  H01L29/0657 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A small semiconductor package having two electrodes, which can be produced at reduced cost and which features high reliability. The package has a structure in which an anode and a cathode are arranged on one surface of a semiconductor chip, each electrode having a bump electrode for connecting the electrode to an external substrate. An insulating resin is provided on the surface of the semiconductor chip and on the surfaces of the bump electrodes, except at least for the connection portions to the external substrate.

摘要翻译： 具有两个电极的小型半导体封装，其可以以低成本制造并具有高可靠性。 该封装具有在半导体芯片的一个表面上布置阳极和阴极的结构，每个电极具有用于将电极连接到外部基板的突起电极。 除了至少与外部基板的连接部分之外，在半导体芯片的表面和突起电极的表面上设置绝缘树脂。

公开(公告)号：US06605854B2

公开(公告)日：2003-08-12

申请号：US10046988

申请日：2002-01-17

申请人： Hiroyuki Nagase ,  Shuichi Suzuki ,  Masaki Otoguro ,  Yasuharu Ichinose ,  Teruhiro Mitsuyasu

发明人： Hiroyuki Nagase ,  Shuichi Suzuki ,  Masaki Otoguro ,  Yasuharu Ichinose ,  Teruhiro Mitsuyasu

IPC分类号： H01L27095

CPC分类号： H01L21/6836 ,  H01L24/27 ,  H01L27/0676 ,  H01L29/66136 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/45144 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/12034 ,  H01L2924/12036 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p−-type conductive type, after a hyper-abrupt p+n+ junction of a p+-type diffusion layer, an n+-type hyper-abrupt layer, an n−-epitaxial layer, an n-type low resistance layer and an n+-type diffusion layer is formed, an anode electrode is formed on the top of the p+-type diffusion layer and a cathode electrode is formed on the top of the n+-type diffusion layer. Thereafter, electrode bumps are formed on the top of the anode electrode and the cathode electrode to thereby manufacture a small diode that can be facedown bonded onto a mounting board.

摘要翻译： 二极管的封装尺寸更小。 在具有p型导电类型的半导体衬底的元件形成面上，在p +型扩散层的高突变p + n +结之后，n +型超突变层，n-外延层 形成n型低电阻层和n +型扩散层，在p +型扩散层的顶部形成阳极，在n +型扩散层的顶部形成阴极电极。 此后，在阳极电极和阴极电极的顶部上形成电极凸块，从而制造出可以面向固定在安装板上的小型二极管。

公开(公告)号：US20050009298A1

公开(公告)日：2005-01-13

申请号：US10485734

申请日：2001-09-20

申请人： Shuichi Suzuki ,  Hiroyuki Nagase ,  Yasuharu Ichinose ,  Teruhiro Mitsuyasu

发明人： Shuichi Suzuki ,  Hiroyuki Nagase ,  Yasuharu Ichinose ,  Teruhiro Mitsuyasu

IPC分类号： H01L21/301 ,  H01L21/68 ,  H01L21/78 ,  H01L23/544 ,  H01L29/06 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L24/27 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/12034 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： For marking a package efficiently at low cost, there is provided a dicing sheet 25 having transfer patterns 28A, 28B and an alignment mark 31 disposed at predetermined positions on a main surface of a base material 26, and an orientation flat 32 of a semiconductor wafer 1 and the alignment mark 31 are aligned with each other, then the main surface of the dicing sheet with the transfer patterns 28A, 28B and the alignment mark 31 disposed thereon and a back surface of the semiconductor wafer 1 are affixed to each other, and thereafter heat and pressure are applied to a back surface of the dicing sheet 25, thereby allowing the transfer patterns 28A and 28B to be transferred at a time to back surfaces of semiconductor chips from the dicing sheet 25.

摘要翻译： 为了以低成本有效地标记封装，提供了具有转印图案28A，28B和设置在基材26的主表面上的预定位置处的对准标记31的切割片25和半导体晶片的取向平面32 1和对准标记31彼此对准，则具有设置在其上的转印图案28A，28B和对准标记31的切割片的主表面和半导体晶片1的背面彼此固定， 然后将热和压力施加到切割片25的背面，从而允许转印图案28A和28B一次从切割片25转移到半导体芯片的背面。