摘要:
A device includes a device die and a plurality of metal posts at a surface of the device die and electrically coupled to the device die. The device further includes a plurality of through-assembly vias (TAVs), a dam member between the device die and the plurality of TAVs, and a polymer layer encompassing the device die, the plurality of metal posts, the plurality of TAVs, and the dam member.
摘要:
A device includes a polymer, a device die in the polymer, and a plurality of Through Assembly Vias (TAVs) extending from a top surface to a bottom surface of the polymer. A bulk metal feature is located in the polymer and having a top-view size greater than a top-view size of each of the plurality of TAVs. The bulk metal feature is electrically floating. The polymer, the device die, the plurality of TAVs, and the bulk metal feature are portions of a package.
摘要:
Methods and apparatus for package on package structures having stud bump through via interconnections. A structure includes an interconnect layer having a plurality of through via assemblies each including at least one stud bump are formed on conductive pads; and encapsulant surrounding the through via assembly, a first redistribution layer formed over a surface of the encapsulant and coupled to the through via assemblies and carrying connectors, and a second redistribution layer over interconnect layer at the other end of the through via assemblies, the through via assemblies extending vertically through the interconnect layer. In an embodiment the interconnect layer is mounted using the connectors to a lower package substrate to form a package on package structure. A first integrated circuit device may be mounted on the second redistribution layer of the interconnect layer. Methods for forming the interconnect layer and the package on package structures are disclosed.
摘要:
A device includes a polymer, a device die in the polymer, and a plurality of Through Assembly Vias (TAVs) extending from a top surface to a bottom surface of the polymer. A bulk metal feature is located in the polymer and having a top-view size greater than a top-view size of each of the plurality of TAVs. The bulk metal feature is electrically floating. The polymer, the device die, the plurality of TAVs, and the bulk metal feature are portions of a package.
摘要:
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
摘要:
The mechanisms of using an interposer frame to package a semiconductor die enables fan-out structures and reduces form factor for the packaged semiconductor die. The mechanisms involve using a molding compound to attach the semiconductor die to the interposer frame and forming a redistribution layer on one or both sides of the semiconductor die. The redistribution layer(s) in the package enables fan-out connections and formation of external connection structures. Conductive columns in the interposer frame assist in thermal management.
摘要:
The mechanisms of using an interposer frame to package a semiconductor die enables fan-out structures and reduces form factor for the packaged semiconductor die. The mechanisms involve using a molding compound to attach the semiconductor die to the interposer frame and forming a redistribution layer on one or both sides of the semiconductor die. The redistribution layer(s) in the package enables fan-out connections and formation of external connection structures. Conductive columns in the interposer frame assist in thermal management.
摘要:
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
摘要:
Methods and apparatus for package on package structures having stud bump through via interconnections. A structure includes an interconnect layer having a plurality of through via assemblies each including at least one stud bump are formed on conductive pads; and encapsulant surrounding the through via assembly, a first redistribution layer formed over a surface of the encapsulant and coupled to the through via assemblies and carrying connectors, and a second redistribution layer over interconnect layer at the other end of the through via assemblies, the through via assemblies extending vertically through the interconnect layer. In an embodiment the interconnect layer is mounted using the connectors to a lower package substrate to form a package on package structure. A first integrated circuit device may be mounted on the second redistribution layer of the interconnect layer. Methods for forming the interconnect layer and the package on package structures are disclosed.
摘要:
Disclosed herein are a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.