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    SEMICONDUCTOR MEMORY DEVICE
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 审中-公开
    半导体存储器件

    公开(公告)号：US20110176346A1

    公开(公告)日：2011-07-21

    申请号：US13007086

    申请日：2011-01-14

    申请人： Yukio KATAMURA

    发明人： Yukio KATAMURA

    IPC分类号： G11C5/02

    CPC分类号： H01L25/0652 ,  H01L25/165 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/18161 ,  H01L2924/19106 ,  H05K1/181 ,  H05K3/284 ,  H05K2201/10159 ,  H05K2201/10545 ,  H05K2203/1316 ,  H01L2224/05599

    摘要： According to one embodiment, semiconductor memory device including: a circuit substrate in which a circuit pattern is formed; a plurality of semiconductor memories mounted via a solder on both surfaces of the circuit substrate; a connector disposed at one end part of the circuit substrate for connection with a host device; and a resin mold part that seals the both surfaces of the circuit substrate. The resin mold part does not seal a region in which the connector is disposed and collectively seals regions in which the plurality of semiconductor memories are disposed.

    摘要翻译： 根据一个实施例，半导体存储器件包括：形成电路图案的电路基板; 多个半导体存储器，其通过焊料安装在电路基板的两个表面上; 连接器，设置在电路基板的一个端部，用于与主机设备连接; 以及密封电路基板的两面的树脂模具部。 树脂模具部分不密封其中设置连接器的区域，并且集中地密封其中设置有多个半导体存储器的区域。

    SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    4.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
    半导体器件制造设备和半导体器件制造方法

    公开(公告)号：US20110263133A1

    公开(公告)日：2011-10-27

    申请号：US13092523

    申请日：2011-04-22

    申请人： Satoru Hara ,  Shingo Tamai ,  Akihiro Shigeyama ,  Michio Ogawa ,  Hitoshi Aoyagi ,  Hiroyuki Tanaka ,  Yasuo Tane ,  Yukio Katamura

    发明人： Satoru Hara ,  Shingo Tamai ,  Akihiro Shigeyama ,  Michio Ogawa ,  Hitoshi Aoyagi ,  Hiroyuki Tanaka ,  Yasuo Tane ,  Yukio Katamura

    IPC分类号： H01L21/30 ,  B05C5/00

    CPC分类号： H01L21/6715 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/67766 ,  H01L21/67778 ,  H01L21/6838 ,  H01L21/68742

    摘要： A semiconductor device manufacturing apparatus includes: an accommodation section accommodating an application object; an irradiation section irradiating the application object taken out from the accommodation section with ultraviolet light; an application section including a stage allowing the application object to be placed thereon and an application head discharging a plurality of droplets of an adhesive to the application object placed on the stage, the application section applying the adhesive through the application head to the application object which is irradiated by ultraviolet light through the irradiation section and is placed on the stage; a drying section drying the adhesive applied on the application object with heat; and a transport section including a hand supporting the application object, the transport section which is capable of transporting the application object accommodated in the accommodation section to the irradiation section, the application section, and the drying section.

    摘要翻译： 一种半导体器件制造设备，包括：容纳应用对象的容纳部; 照射部，用紫外线照射从所述收纳部取出的所述应用物体; 应用部分，包括允许将应用对象放置在其上的阶段以及将多个粘合剂液滴排放到放置在舞台上的应用对象的应用头，所述应用部分通过应用头将粘合剂施加到应用对象， 通过紫外线照射通过照射部分并放置在舞台上; 干燥部分，用热干燥涂布在涂敷物上的粘合剂; 以及运送部，其包括支撑所述应用对象的手，所述运送部能够将容纳在所述收容部中的所述应用物体运送到所述照射部，所述应用部和所述干燥部。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20110263097A1

    公开(公告)日：2011-10-27

    申请号：US13053959

    申请日：2011-03-22

    申请人： Atsushi YOSHIMURA ,  Yasuo TANE ,  Yukio KATAMURA ,  Fumihiro IWAMI

    发明人： Atsushi YOSHIMURA ,  Yasuo TANE ,  Yukio KATAMURA ,  Fumihiro IWAMI

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386

    摘要： According to one embodiment, a method for manufacturing semiconductor device can include forming a groove with a depth shallower than a thickness of a wafer. The method can include attaching a surface protection tape via a first bonding layer provided in the surface protection tape. The method can include grinding a surface of the wafer to divide the wafer into a plurality of semiconductor elements. The method can include forming an element bonding layer by attaching a bonding agent and turning the attached bonding agent into a B-stage state. The method can include attaching a dicing tape via a second bonding layer provided in the dicing tape. The method can include irradiating the first bonding layer with a first active energy ray. The method can include removing the surface protection tape. The method can include irradiating the second bonding layer with a second active energy ray.

    摘要翻译： 根据一个实施例，半导体器件的制造方法可以包括形成深度比晶片厚度更深的凹槽。 该方法可以包括通过设置在表面保护带中的第一粘合层附接表面保护带。 该方法可以包括研磨晶片的表面以将晶片分成多个半导体元件。 该方法可以包括通过附着粘合剂形成元件结合层并将附着的粘接剂转化为B阶状态。 该方法可以包括通过设置在切割带中的第二粘合层附着切割带。 该方法可以包括用第一活性能量射线照射第一结合层。 该方法可以包括去除表面保护带。 该方法可以包括用第二活性能量射线照射第二结合层。