公开(公告)号：US08629041B2

公开(公告)日：2014-01-14

申请号：US13091682

申请日：2011-04-21

申请人： Yasuo Tane ,  Yukio Katamura ,  Atsushi Yoshimura ,  Fumihiro Iwami ,  Kazuyoshi Sakurai

发明人： Yasuo Tane ,  Yukio Katamura ,  Atsushi Yoshimura ,  Fumihiro Iwami ,  Kazuyoshi Sakurai

IPC分类号： H01L21/00

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/2742 ,  H01L2224/27436 ,  H01L2224/27848 ,  H01L2224/279 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83908 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include die bonding to bond a semiconductor element to a first position of a base member via a bonding layer provided on one surface of the semiconductor element. The method can include wire bonding to connect a terminal formed on the semiconductor element to a terminal formed on the base member by a bonding wire. In addition, the method can include sealing to seal the semiconductor element and the bonding wire. Viscosity of the bonding layer in the bonding is controlled not to exceed the viscosity of the bonding layer in the sealing.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法可以包括通过经由设置在半导体元件的一个表面上的接合层将半导体元件结合到基底构件的第一位置的芯片接合。 该方法可以包括引线接合，通过接合线将形成在半导体元件上的端子连接到形成在基底构件上的端子。 此外，该方法可以包括密封以密封半导体元件和接合线。 接合中的接合层的粘度被控制为不超过密封中的接合层的粘度。

公开(公告)号：US08276537B2

公开(公告)日：2012-10-02

申请号：US13008443

申请日：2011-01-18

申请人： Yukio Katamura ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yukio Katamura ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/30

CPC分类号： H01L21/6715 ,  H01L21/67109 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/743 ,  H01L2224/83191 ,  H01L2224/94 ,  Y10T156/10 ,  H01L2224/27 ,  H01L2924/00

摘要： In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体器件的方法。 该方法可以包括在将包含树脂和溶剂的粘合材料附着到与包括晶片的电路图案的第一表面相对的第二表面时，加热粘合材料以蒸发溶剂并降低溶剂的蒸气压 气氛面临着接合材料并加热附着的接合材料以形成接合层。

公开(公告)号：US09006029B2

公开(公告)日：2015-04-14

申请号：US13052144

申请日：2011-03-21

申请人： Yukio Katamura ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yukio Katamura ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/06155 ,  H01L2224/27312 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/29 ,  H01L2224/29011 ,  H01L2224/29035 ,  H01L2224/29036 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法，该半导体器件包括具有形成在第一主表面上的电极焊盘和设置在第二主表面上的接合层的半导体芯片，以及具有安装在该衬底上的半导体芯片的衬底。 制造方法可以包括在基板的前表面上将接合成形材料的半导体芯片的第二主表面的外边缘接触的部分。 该方法可以包括通过接合层将半导体芯片的第二主表面接合到衬底。

公开(公告)号：US20120318431A1

公开(公告)日：2012-12-20

申请号：US13599340

申请日：2012-08-30

申请人： Yukio Katamura ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yukio Katamura ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/50

CPC分类号： H01L21/6715 ,  H01L21/67109 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/743 ,  H01L2224/83191 ,  H01L2224/94 ,  Y10T156/10 ,  H01L2224/27 ,  H01L2924/00

摘要： In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体器件的方法。 该方法可以包括在将包含树脂和溶剂的粘合材料附着到与包括晶片的电路图案的第一表面相对的第二表面时，加热粘合材料以蒸发溶剂并降低溶剂的蒸气压 气氛面临着接合材料并加热附着的接合材料以形成接合层。

公开(公告)号：US20110263131A1

公开(公告)日：2011-10-27

申请号：US13008443

申请日：2011-01-18

申请人： Yukio KATAMURA ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yukio KATAMURA ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/302 ,  B05B15/00 ,  B05B1/02

CPC分类号： H01L21/6715 ,  H01L21/67109 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/743 ,  H01L2224/83191 ,  H01L2224/94 ,  Y10T156/10 ,  H01L2224/27 ,  H01L2924/00

摘要： In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体器件的方法。 该方法可以包括在将包含树脂和溶剂的粘合材料附着到与包括晶片的电路图案的第一表面相对的第二表面时，加热粘合材料以蒸发溶剂并降低溶剂的蒸气压 气氛面临着接合材料并加热附着的接合材料以形成接合层。

公开(公告)号：US08691628B2

公开(公告)日：2014-04-08

申请号：US13226152

申请日：2011-09-06

申请人： Yasuo Tane ,  Yukio Katamura ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yasuo Tane ,  Yukio Katamura ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/00

CPC分类号： H01L25/50 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/93 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/27312 ,  H01L2224/27848 ,  H01L2224/27901 ,  H01L2224/29016 ,  H01L2224/29017 ,  H01L2224/29018 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/33183 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599

摘要： According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.

摘要翻译： 根据一个实施例，制造半导体器件的方法，在半导体晶片的芯片区域的第一表面上形成接合层。 半导体芯片沿切割区域分割。 半导体芯片经由接合层逐级层叠。 在半导体芯片的接合层的形成中，在层叠状态的第一面的第一区域的第一区域与其他半导体芯片不接触的情况下，形成接合层的突出部比形成 提供与另一半导体芯片接触的第二区域中的层。

公开(公告)号：US20120052627A1

公开(公告)日：2012-03-01

申请号：US13052144

申请日：2011-03-21

申请人： Yukio KATAMURA ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

发明人： Yukio KATAMURA ,  Yasuo Tane ,  Atsushi Yoshimura ,  Fumihiro Iwami

IPC分类号： H01L21/50

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/06155 ,  H01L2224/27312 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/29 ,  H01L2224/29011 ,  H01L2224/29035 ,  H01L2224/29036 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法，该半导体器件包括具有形成在第一主表面上的电极焊盘和设置在第二主表面上的接合层的半导体芯片，以及具有安装在该衬底上的半导体芯片的衬底。 制造方法可以包括在基板的前表面上将接合成形材料的半导体芯片的第二主表面的外边缘接触的部分。 该方法可以包括通过接合层将半导体芯片的第二主表面接合到衬底。

公开(公告)号：US20110263133A1

公开(公告)日：2011-10-27

申请号：US13092523

申请日：2011-04-22

申请人： Satoru Hara ,  Shingo Tamai ,  Akihiro Shigeyama ,  Michio Ogawa ,  Hitoshi Aoyagi ,  Hiroyuki Tanaka ,  Yasuo Tane ,  Yukio Katamura

发明人： Satoru Hara ,  Shingo Tamai ,  Akihiro Shigeyama ,  Michio Ogawa ,  Hitoshi Aoyagi ,  Hiroyuki Tanaka ,  Yasuo Tane ,  Yukio Katamura

IPC分类号： H01L21/30 ,  B05C5/00

CPC分类号： H01L21/6715 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/67766 ,  H01L21/67778 ,  H01L21/6838 ,  H01L21/68742

摘要： A semiconductor device manufacturing apparatus includes: an accommodation section accommodating an application object; an irradiation section irradiating the application object taken out from the accommodation section with ultraviolet light; an application section including a stage allowing the application object to be placed thereon and an application head discharging a plurality of droplets of an adhesive to the application object placed on the stage, the application section applying the adhesive through the application head to the application object which is irradiated by ultraviolet light through the irradiation section and is placed on the stage; a drying section drying the adhesive applied on the application object with heat; and a transport section including a hand supporting the application object, the transport section which is capable of transporting the application object accommodated in the accommodation section to the irradiation section, the application section, and the drying section.

摘要翻译： 一种半导体器件制造设备，包括：容纳应用对象的容纳部; 照射部，用紫外线照射从所述收纳部取出的所述应用物体; 应用部分，包括允许将应用对象放置在其上的阶段以及将多个粘合剂液滴排放到放置在舞台上的应用对象的应用头，所述应用部分通过应用头将粘合剂施加到应用对象， 通过紫外线照射通过照射部分并放置在舞台上; 干燥部分，用热干燥涂布在涂敷物上的粘合剂; 以及运送部，其包括支撑所述应用对象的手，所述运送部能够将容纳在所述收容部中的所述应用物体运送到所述照射部，所述应用部和所述干燥部。

公开(公告)号：US20110267796A1

公开(公告)日：2011-11-03

申请号：US13051880

申请日：2011-03-18

申请人： Atsushi YOSHIMURA ,  Yasuo Tane

发明人： Atsushi YOSHIMURA ,  Yasuo Tane

IPC分类号： H01L23/12 ,  B32B37/14 ,  B32B37/06 ,  H01L21/00 ,  B32B37/12

CPC分类号： H01L23/3128 ,  H01L23/3107 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/27002 ,  H01L2224/29007 ,  H01L2224/29017 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/2919 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2224/48247 ,  H01L2224/48249 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to one embodiment, a semiconductor device includes a matrix and a semiconductor element bonded to the matrix via a bonding layer. The bonding layer includes a first layer and a second layer having a viscosity lower than a viscosity of the first layer at a bonding temperature. The first layer has a portion in which an end of the first layer is set further back to an inside than an end of the semiconductor element. At least a part of the portion set back to the inside is filled with a part of the second layer extruded from a periphery of the first layer to an outside.

摘要翻译： 根据一个实施例，半导体器件包括矩阵和通过结合层结合到矩阵的半导体元件。 接合层包括在接合温度下粘度低于第一层的粘度的第一层和第二层。 第一层具有第一层的一端进一步设置在比半导体元件的端部更靠内部的部分。 至少部分设置在内部的部分填充有从第一层的周边挤出到外部的第二层的一部分。

公开(公告)号：US20070196952A1

公开(公告)日：2007-08-23

申请号：US11651561

申请日：2007-01-10

申请人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Yasuo Tane

发明人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Yasuo Tane

IPC分类号： H01L21/00

CPC分类号： H01L21/6838 ,  H01L23/3128 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A substrate having an element mounting portion is placed on a suction stage having a suction hole. The suction hole is provided so as to suck a region excluding the element mounting portion of the substrate. Otherwise, the suction hole has a hole size of not less than 0.5 mm nor more than 1.0 mm. A fist semiconduct or substrate is sucked with a suction rubber collet with Shore A hardness of not less than 50 nor more than 70. The first semiconductor element is bonded to the element mounting portion of the substrate. A second semiconductor element having an adhesive layer with a remaining volatile content of 0.5% or less is disposed on the first semiconductor substrate. The adhesive layer is heated to a temperature in a range of not less than 120° C. nor more than 150° C. and bonded.

摘要翻译： 具有元件安装部的基板被放置在具有吸入孔的抽吸台上。 吸引孔设置成吸引除基板的元件安装部以外的区域。 否则，吸孔的孔径不小于0.5mm，不大于1.0mm。 第一半导体或基板被吸入具有不低于50且不大于70的肖氏A硬度的吸力橡胶夹头。第一半导体元件结合到基板的元件安装部分。 具有0.5％以下剩余挥发物含量的粘合剂层的第二半导体元件设置在第一半导体衬底上。 将粘合剂层加热至不低于120℃并且不超过150℃的温度。