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公开(公告)号:US4947380A
公开(公告)日:1990-08-07
申请号:US208186
申请日:1988-06-16
申请人: Adrianus T. Van Zanten , Hendrikus J. M. Veendrick , Frits A. Steenhof , Peter H. Frencken , Antonius H. H. J. Nillesen , Cornelis G. L. M. Van Der Sanden
发明人: Adrianus T. Van Zanten , Hendrikus J. M. Veendrick , Frits A. Steenhof , Peter H. Frencken , Antonius H. H. J. Nillesen , Cornelis G. L. M. Van Der Sanden
CPC分类号: G11C19/287 , G11C27/04
摘要: The invention relates to a memory device of the charge-coupled shift register type which is subdivided into four sections each of which has a storage capacity of, for example 208,800 bits and which can operate in different modes: parallel-in/parallel-out (as background video memory); 2.times.2 parallel-in, demultiplex/multiplex mode, for example for 100 Hz TV; scan mode; parallel-in-recirculation mode; "shortened" memory, for example for 525-line system, etcetera. Control is realized via a decoding and timing block in which a multi-bit control word is serially input and decoded. In a scan mode (for example, as a teletext memory), the memory sections are scanned one-by-one under the control of a separate scan register in which a scan bit (logic 1) is step-wise shifted until all sections have been read. Via a data output, the scan bit is transferred, for example to the scan register of a further memory device (via its serial data input) which is connected in series with the former memory device.
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公开(公告)号:US4727560A
公开(公告)日:1988-02-23
申请号:US855652
申请日:1986-04-25
IPC分类号: G11C27/04 , G11C19/28 , H01L21/339 , H01L27/148 , H01L29/76 , H01L29/762 , H01L29/768 , H01L29/772 , H01L29/78
CPC分类号: G11C19/285 , H01L29/76808
摘要: The invention relates to a CCD input and reference charge generator, in which the occurrence of electron injection into the substrate (due to cross-talk to the substrate) and hence undesired signal distortions is prevented. For this purpose, the generator is provided with a voltage divider (26) which is constituted at least for a part (28) by a resistance element arranged outside the substrate, for example, by a polycrystalline silicon resistor. Thus, it is achieved that input diode zones (11) are no longer connected to the substrate voltage.
摘要翻译: 本发明涉及一种CCD输入和参考电荷发生器,其中防止电子注入基板(由于与基板的串扰)而发生,从而防止了不期望的信号失真。 为此,发电机设置有分压器(26),其通过例如由多晶硅电阻器布置在衬底外部的电阻元件至少构成一部分(28)。 因此,实现输入二极管区(11)不再连接到衬底电压。
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公开(公告)号:US4707844A
公开(公告)日:1987-11-17
申请号:US875806
申请日:1986-06-18
CPC分类号: G11C19/285 , G11C8/18
摘要: Charge-coupled devices are very sensitive to clock cross-talk due to the overlap between successive electrodes. The influence of this cross-talk is reduced when the clock lines are periodically connected to ground by a low-ohmic impedance. For this purpose, each clock line is controlled from a buffer, whose output is connected to a clock line. A clamping transistor is connected between the output and ground. When this clamping transistor is controlled by means of the output signal and at the same time by the input signal of the buffer, the output is clamped to ground at the instant at which the cross-talk is expected by means of only a single clamping transistor.
摘要翻译: 电荷耦合器件由于连续电极之间的重叠而对时钟串扰非常敏感。 当时钟线通过低欧姆阻抗周期性地连接到地,这种串扰的影响减小了。 为此,每个时钟线由缓冲器控制,其输出端连接到时钟线。 钳位晶体管连接在输出和地之间。 当该钳位晶体管通过输出信号控制并且同时由缓冲器的输入信号控制时,输出在通过仅一个钳位晶体管预期串扰的时刻被钳位到地 。
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公开(公告)号:US4918331A
公开(公告)日:1990-04-17
申请号:US358478
申请日:1989-05-26
IPC分类号: H03K3/037 , H03K19/003
CPC分类号: H03K3/0372 , H03K19/00323
摘要: In relatively large systems of (integrated) circuits, data signals can experience a delay which is in the order of magnitude of a clock-pulse period. The receiving circuit (i.e. receiving the data signal) then receives the data signal too late (the clock pulse has ceased) and can at that moment no longer take over the data signal for further processing or transport. In the system according to the invention the clock pulses are led via a delaying element (for example, the inverting circuits in series) to the receiving circuit (slave of the master/slave flip-flop). The data output of the receiving circuit is connected to a data input of another circuit (master of another master/slave flip-flop), which receives the undelayed clock pulses, the data delay between the receiving circuit and the other circuit being negligible. The data delay is thus distributed over two clock pulses.
摘要翻译: 在相对大的(集成的)电路系统中,数据信号可以经历时钟脉冲周期的数量级的延迟。 接收电路(即接收数据信号)然后接收数据信号太晚(时钟脉冲已经停止),并且在此时刻不再接管数据信号用于进一步的处理或传输。 在根据本发明的系统中,通过延迟元件(例如,串联的反相电路)将时钟脉冲引导到接收电路(主/从触发器的从机)。 接收电路的数据输出连接到另一个电路(另一主/从触发器的主机)的数据输入端,其接收未延迟的时钟脉冲,接收电路和另一个电路之间的数据延迟可以忽略不计。 因此数据延迟分布在两个时钟脉冲上。
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5.
公开(公告)号:US4775806A
公开(公告)日:1988-10-04
申请号:US935488
申请日:1986-11-26
IPC分类号: H01L27/04 , G05F1/46 , H01L21/822 , H03K19/003 , H03K3/356 , H03K4/58 , H03K17/14 , H03K17/16
CPC分类号: H03K19/00323 , G05F1/466 , H03K19/00384
摘要: In integrated circuits the delay of the signal transitions has to lie within specified limits. This delay is partly determined by variations in the manufacturing process (process scatter). To compensate for the effect of this scatter a load capacitance is connected via a switching element to a node which is to be influenced in the integrated circuit. The switching element receives a reference voltage which is dependent on the manufacturing process and is generated by reference source, so that the node capacitance 26 is connected to the node for a longer or shorter time, depending on the process scatter.
摘要翻译: 在集成电路中,信号转换的延迟必须在规定的限度内。 这种延迟部分地取决于制造过程的变化(过程分散)。 为了补偿这种散射的影响,负载电容经由开关元件连接到要在集成电路中受影响的节点。 开关元件接收取决于制造过程并由参考源产生的参考电压,使得节点电容26根据过程散射而连接到节点较长或较短的时间。
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公开(公告)号:US4697111A
公开(公告)日:1987-09-29
申请号:US698999
申请日:1985-02-07
申请人: Adrianus T. Van Zanten , Hendrikus J. M. Veendrick , Leonardus C. M. G. Pfennings , Wilhelmus C. H. Gubbels
发明人: Adrianus T. Van Zanten , Hendrikus J. M. Veendrick , Leonardus C. M. G. Pfennings , Wilhelmus C. H. Gubbels
IPC分类号: H03K19/094 , H03K17/06 , H03K19/003 , H03K19/017 , H03K19/0944 , H03K4/58 , H03K17/04 , H03K17/10
CPC分类号: H03K19/00315 , H03K19/01714 , H03K19/09443
摘要: An integrated logic circuit includes a push-pull amplifier stage, in which by means of a bootstrap circuit the potential at the gate of the "push" transistor is brought above the supply voltage so that the output voltage of the amplifier lies above the supply voltage minus the threshold voltage of the push transistor. In order to prevent the charge from leaking away after the bootstrap capacitance has been charged via an enhancement transistor, the enhancement transistor is cut off by means of the "low" input signal. A second bootstrap circuit (between the input and the gate of the enhancement transistor) ensures that the first bootstrap capacitance is charged up to the full supply voltage because the latter gate electrode is lifted above the supply voltage by the second bootstrap.
摘要翻译: 集成逻辑电路包括一个推挽放大器级,其中通过自举电路使“推”晶体管的栅极处的电位高于电源电压,使得放大器的输出电压高于电源电压 减去推式晶体管的阈值电压。 为了防止在自举电容经由增强型晶体管充电之后电荷泄漏,增强晶体管通过“低”输入信号被切断。 第二自举电路(在增强晶体管的输入和栅极之间)确保第一自举电容被充电至全电源电压,因为后一栅电极被第二自举提升到电源电压以上。
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公开(公告)号:US4817090A
公开(公告)日:1989-03-28
申请号:US855577
申请日:1986-04-25
CPC分类号: H04J3/047
摘要: A multiplex circuit includes a cascade connection of flip-flop elements for producing a high data-rate multiplex signal. In order to avoid disturbances caused by parallel loading of the flip-flop circuits, the slave-section of the flip-flop generating the multiplex signal is not parallel loaded, which results in a continuous output signal.
摘要翻译: 复用电路包括用于产生高数据速率复用信号的触发器元件的级联连接。 为了避免触发器电路并联引起的干扰,产生多路复用信号的触发器的从部分不被并行加载,这导致连续的输出信号。
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公开(公告)号:US4705966A
公开(公告)日:1987-11-10
申请号:US772790
申请日:1985-09-05
IPC分类号: H01L27/04 , G05F3/20 , G05F3/24 , G11C11/407 , H01L21/822 , H02M3/07 , H03K3/01
CPC分类号: G05F3/205
摘要: A substrate bias generator in which a junction point of the capacitance and the diode of a charge pump is connected to the ground point of the circuit (and of the further circuit on the substrate for which the bias is generated) via two or more series-connected transistors. During the charging period of the capacitance the transistors are (fully) conductive, hence the capacitance is optimally charged as the conductive transistors cause no (or hardly any) voltage drop. During the pumping cycle all transistors are diode-connected, to bring about a negative voltage with respect to the ground point at the junction point. This negative voltage is limited to the sum of the threshold voltages of the diode-connected transistors.
摘要翻译: 一种衬底偏置发生器,其中电荷泵的电容和二极管的连接点经由两个或更多个串联电路连接到电路的接地点(以及产生偏置的衬底上的另外的电路)的接地点, 连接晶体管。 在电容的充电期间,晶体管是(完全)导电的,因此当导电晶体管导致没有(或几乎没有任何)电压降时,电容被最佳地充电。 在泵浦循环期间,所有晶体管都是二极管连接的,以便在接合点处产生相对于接地点的负电压。 该负电压被限制为二极管连接的晶体管的阈值电压之和。
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9.
公开(公告)号:US4126900A
公开(公告)日:1978-11-21
申请号:US814643
申请日:1977-07-11
IPC分类号: H01L27/10 , G11C11/35 , G11C11/401 , G11C11/404 , H01L21/8247 , H01L27/108 , H01L29/788 , H01L29/792 , G11C11/40
CPC分类号: G11C11/404 , G11C11/35 , H01L27/108
摘要: JFET memory structures, in particular for RAM's with non-destructive reading-out of the charge state of a floating gate electrode in which the primary selection is realized by means of capacitive coupling with the floating gate electrode. The secondary selection takes place on one of the main electrodes of the JFET structures in which the other main electrode can be connected to the supply. By means of a second common gate electrode the pinch-off voltage of the channels can be adjusted so that the channels are non-conductive in the non-selected condition and a good detection of the information state is obtained in the selected condition.
摘要翻译: JFET存储器结构,特别是对于具有非破坏性读出浮栅电极的电荷状态的RAM,其中通过与浮栅电极的电容耦合来实现初级选择。 二次选择发生在JFET结构的一个主电极上,其中另一个主电极可以连接到电源。 通过第二公共栅电极,可以调节通道的截止电压,使得通道在未选择的状态下不导通,并且在所选择的条件下获得良好的信息状态检测。
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