利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

49 条记录 (耗时 0.031 秒)

    MELT-BLOWN NONWOVEN FABRIC, AND PRODUCTION PROCESS AND APPARATUS FOR THE SAME
    1.
    发明申请
    MELT-BLOWN NONWOVEN FABRIC, AND PRODUCTION PROCESS AND APPARATUS FOR THE SAME 有权
    金属非织造布，以及生产工艺及其相关设备

    公开(公告)号：US20130266874A1

    公开(公告)日：2013-10-10

    申请号：US13991863

    申请日：2011-12-05

    申请人： Akio Matsubara ,  Shingo Kajiyama ,  Kenichi Suzuki ,  Hirohisa Shiode ,  Takayuki Kubo

    发明人： Akio Matsubara ,  Shingo Kajiyama ,  Kenichi Suzuki ,  Hirohisa Shiode ,  Takayuki Kubo

    IPC分类号： D04H1/56 ,  B01D39/16

    CPC分类号： D04H1/4391 ,  B01D39/163 ,  B32B5/022 ,  B32B5/26 ,  B32B2262/0253 ,  D01D4/025 ,  D01D5/088 ,  D01D5/0985 ,  D04H1/5405 ,  D04H1/544 ,  D04H1/56 ,  D04H1/565 ,  D04H3/16 ,  H01M2/162 ,  Y10T428/24942 ,  Y10T442/626

    摘要： It is an object of the present invention to provide a stable production process for a melt-blown nonwoven fabric comprising thin fibers and having extremely few thick fibers [number of fusion-bonded fibers] formed by fusion bonding of thermoplastic resin fibers to one another, and an apparatus for the same. The present invention relates to a melt-blown nonwoven fabric comprising polyolefin fibers and having (i) a mean fiber diameter of not more than 2.0 μm, (ii) a fiber diameter distribution CV value of not more than 60%, and (iii) 15 or less fusion-bonded fibers based on 100 fibers; a production process for a melt-blown nonwoven fabric characterized by feeding cooling air of not higher than 30° C. from both side surfaces of outlets of slits 31 from which high-temperature high-velocity air is gushed out and thereby cooling the spun molten resin; and a production apparatus for the same.

    摘要翻译： 本发明的目的在于提供一种熔融非织造布的稳定的制造方法，所述熔喷无纺布包括薄纤维，并且通过将热塑性树脂纤维彼此熔合而形成的极细纤维[熔融纤维数] 及其装置。 本发明涉及包含聚烯烃纤维的熔喷非织造布，（i）平均纤维直径不超过2.0μm，（ii）纤维直径分布CV值不大于60％，和（iii） 基于100根纤维的15个或更少的熔合纤维; 熔喷无纺布的制造方法，其特征在于，从狭缝31的出口的两侧表面供给不高于30℃的冷却空气，高温高速空气喷出，从而冷却熔融 树脂; 及其制造装置。

    Fluid pressure control device for lock-up mechanism
    3.
    发明授权
    Fluid pressure control device for lock-up mechanism 失效
    用于锁定机构的流体压力控制装置

    公开(公告)号：US07011603B2

    公开(公告)日：2006-03-14

    申请号：US10737913

    申请日：2003-12-18

    申请人： Yasuhiko Kobayashi ,  Takeshi Inuzuka ,  Shigeki Takami ,  Yoshitaka Murase ,  Yoichi Tajima ,  Takayuki Kubo ,  Takahiro Kido

    发明人： Yasuhiko Kobayashi ,  Takeshi Inuzuka ,  Shigeki Takami ,  Yoshitaka Murase ,  Yoichi Tajima ,  Takayuki Kubo ,  Takahiro Kido

    IPC分类号： F16H61/14

    CPC分类号： F16H61/14 ,  F16H57/04 ,  F16H61/0031 ,  Y10T477/635

    摘要： A fluid pressure control device including a torque converter that is placed between a output shaft of an engine and an input shaft of a transmission, a mechanical oil pump that is driven by the output shaft, a clutch that directly engages the output shaft and the input shaft by employing an engagement pressure based on a fluid pressure that is generated by the mechanical oil pump, an electric oil pump that can supply a fluid pressure to the clutch, and a control unit for controlling the electric oil pump, wherein when the engagement pressure based on the fluid pressure that is generated by the mechanical oil pump is an amount below a necessary engagement pressure that is necessary to engage the clutch, the control unit drives the electric oil pump so as to supply a fluid pressure by at least the amount to the clutch.

    摘要翻译： 一种液压控制装置，包括放置在发动机的输出轴和变速器的输入轴之间的变矩器，由输出轴驱动的机械油泵，直接接合输出轴的离合器和输入 通过采用基于由机械油泵产生的流体压力的接合压力，能够向离合器供给流体压力的电动油泵和用于控制电动油泵的控制单元，其中当接合压力 基于由机械油泵产生的流体压力是低于与离合器接合所需的必要接合压力的量，控制单元驱动电动油泵，以将流体压力至少提供至 离合器。

    Production device for high-quality silicon single crystals
    4.
    发明授权
    Production device for high-quality silicon single crystals 有权
    高品质硅单晶生产设备

    公开(公告)号：US06702892B2

    公开(公告)日：2004-03-09

    申请号：US09926285

    申请日：2001-11-20

    申请人： Masahiko Okui ,  Manabu Nishimoto ,  Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano

    发明人： Masahiko Okui ,  Manabu Nishimoto ,  Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano

    IPC分类号： C30B1514

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/106 ,  Y10T117/1068

    摘要： An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.85D and the bottom side of the thermal insulating member below the cooling member having an inside diameter smaller than the inside diameter of the bottom of the cooling member.

    摘要翻译： 提供了一种用于制造用作半导体材料的硅晶片的单晶的装置，其可以稳定地生产大直径，长长和高质量的单晶，其中限制了多个生长缺陷的晶片 可以服用 这种硅单晶制造装置包括围绕单晶的被拉起并具有与牵引轴同轴的内表面的冷却构件和设置在冷却构件的外表面的外表面的外表面的下方的隔热构件， 内表面直径为1.20D至2.50D（D为待拉起的单晶的直径），长度不小于0.25D，从冷却件的熔体表面到底表面的距离为 0.30D至0.85D，并且所述隔热构件的底部在所述冷却构件下方的内径小于所述冷却构件的底部的内径。

    Method of growing crystal
    7.
    发明授权
    Method of growing crystal 失效
    生长晶体的方法

    公开(公告)号：US5402747A

    公开(公告)日：1995-04-04

    申请号：US71102

    申请日：1993-06-04

    申请人： Sumio Kobayashi ,  Shunji Miyahara ,  Toshiyuki Fujiwara ,  Takayuki Kubo ,  Hideki Fujiwara ,  Shuichi Inami ,  Masahiko Okui

    发明人： Sumio Kobayashi ,  Shunji Miyahara ,  Toshiyuki Fujiwara ,  Takayuki Kubo ,  Hideki Fujiwara ,  Shuichi Inami ,  Masahiko Okui

    IPC分类号： C30B15/04 ,  C30B15/20 ,  C30B15/30 ,  H01L21/208

    CPC分类号： C30B15/30 ,  C30B15/04 ,  C30B15/20

    摘要： A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the crucible is rendered to coexist with a melted layer over the solid layer. The solid layer is melted from the upper side thereof while pulling the single crystal from the melted layer. The ratio by weight between the solid layer and the single crystal material at the start of pulling is adjusted, together with the ratio by weight between the grown single crystal and the melting solid layer. The single crystal is thus grown while changing the volume of the melted layer.

    摘要翻译： 将单晶材料填充在坩埚中，并且将整个单晶材料熔化以含有掺杂杂质。 从坩埚底部向上凝结的固体层与固体层上的熔融层共存。 从熔融层拉出单晶时，从其上侧熔化固体层。 调整开始拉伸时固体层与单晶材料之间的重量比，以及生长的单晶和熔融固体层之间的重量比。 因此在改变熔融层的体积的同时生长单晶。