摘要:
A spline-coupling structure in which at least one of male and female members has a press-fit guide face provided at its end opposed to the other member before press-fitting of the members. The press-fit guide face includes a plurality of guide face portions smoothly interconnecting the end and bottom lands of the spline teeth of the one member to form axially outwardly expanded arcs, a plurality of second guide face portions smoothly interconnecting tooth addendums of the spline teeth and the end to form axially outwardly expanded arcs, and a plurality of third guide face portions smoothly interconnecting tooth flanks of the spline teeth and the second guide face portion to form axially outwardly expanded arcs. The first, second and third guide face portions are connected smoothly to one another. Thus, dragging between the spline teeth of both members is prevented during press-fit coupling, to maximize the function of crownings to reduce press-fitting load and provide a sufficient coupling force, and facilitate disengagement of both members from each other and allow reuse of both members.
摘要:
Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要:
In a non-volatile phase-change memory comprising: an interlayer dielectric film and a plug formed on one main surface side of a silicon substrate; a phase-change film which can take a different electric resistivity depending on a phase change and is provided on surfaces of the interlayer dielectric film and the plug; and an upper electrode film formed on an upper surface of the phase-change film, a relation between a film thickness of the phase-change film and an amount of protrusion of the upper electrode film from the plug is set to 0.3≦L/T≦1. Thus, a density of current flowing through the phase-change film near the outer periphery of the plug is reduced, thereby suppressing migration and enabling rewriting with low energy. Accordingly, a reliable non-volatile phase-change memory can be achieved.
摘要翻译:一种非易失性相变存储器,包括:层间电介质膜和形成在硅衬底的一个主表面侧上的插塞; 可以根据相变取得不同的电阻率并设置在层间绝缘膜和插头的表面上的相变膜; 以及形成在相变膜的上表面上的上电极膜,相变膜的膜厚与上电极膜与插塞的突出量之间的关系设定为0.3 <= L / T <= 1。 因此,流过插塞外周附近的相变膜的电流密度降低,从而抑制迁移并能够以低能量进行重写。 因此,可以实现可靠的非易失性相变存储器。
摘要:
For preventing an optical axis from shifting due to a heat cycle in a semiconductor laser module, or in a optical transmitter, the semiconductor laser module comprises, a semiconductor laser element, a frame for storing the semiconductor laser element therein, an optical fiber fixing portion being connected to the frame; and a flange being connected to the frame, and having a fixing portion for fixing the frame on a substrate, wherein the flange has a narrow width region between a fixing region, including a foxing portion with the substrate therein, and the frame, and the narrow width region is narrower than width of the fixing region.
摘要:
Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.
摘要:
A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
摘要:
According to an insertion support system of the present invention, when a biopsy area is specified at a periphery of the bronchi, the barycenter of the biopsy area is extracted. A circle centering on the barycenter is determined as a search area. The search area is expanded until the bronchi are located within the search area. A point in the search area to which the bronchi first reach is determined as an end point. A first route choice connecting the end point and a start point is determined. If the first route choice has not been registered yet, the first route choice is registered as a first registered route. Accordingly, a location of interest can be specified as an arbitrary region, and navigation leading to the specified region is appropriately set.
摘要:
A semiconductor device includes a plurality of semiconductor packages each with a semiconductor element and a flexible board. The flexible board is wider than the semiconductor element and is electrically connected to the semiconductor element. The plurality of semiconductor packages are stacked on one surface of a mother board. The semiconductor element is positioned between the flexible boards of the semiconductor packages in adjacent layers. The flexible boards in the adjacent layers are joined together at junction portions positioned at a part of the flexible boards which sticks out from an area in which the semiconductor elements and the flexible boards overlap. A reinforcing resin is provided in at least a part of the area between the flexible boards in the adjacent layers and between the junction portion of the flexible boards and the corresponding semiconductor element. The reinforcing resin contacts at least a part of the adjacent flexible board.
摘要:
In a semiconductor laser module, in order to sufficiently reduce the thermal stress arising in a due to the bonding of elements when they are packaged and to improve the yield of production, the semiconductor laser module is provided with a semiconductor laser element, a submount bonded to the semiconductor laser element with a solder layer in-between and thereby mounted with it, and a base mounted with this submount with another solder layer in-between. Herein, T/W≧0.15 holds, where W is the width of the submount in the direction orthogonal to the optical axis of the semiconductor laser element and T is the thickness of the submount.
摘要:
A semiconductor device provided with a mechanism for recording information is intended to provide a highly reliable one time programmable memory and to provide one time programmable memories at a high yield. In a one time programmable memory, a state in which the electrical resistance is high is varied to another state in which it is low by silicifying a metal with silicon and matching the high resistance state (a metal/silicon separated state) and the low resistance state (a silicide state) to 0 and 1, respectively, wherein there is used an underlayer material which reduces the interfacial energy in the interface with the silicide layer, which constitutes the low resistance state.