Spline-coupling structure
    1.
    发明授权
    Spline-coupling structure 失效
    花键耦合结构

    公开(公告)号:US5503494A

    公开(公告)日:1996-04-02

    申请号:US278218

    申请日:1994-07-21

    摘要: A spline-coupling structure in which at least one of male and female members has a press-fit guide face provided at its end opposed to the other member before press-fitting of the members. The press-fit guide face includes a plurality of guide face portions smoothly interconnecting the end and bottom lands of the spline teeth of the one member to form axially outwardly expanded arcs, a plurality of second guide face portions smoothly interconnecting tooth addendums of the spline teeth and the end to form axially outwardly expanded arcs, and a plurality of third guide face portions smoothly interconnecting tooth flanks of the spline teeth and the second guide face portion to form axially outwardly expanded arcs. The first, second and third guide face portions are connected smoothly to one another. Thus, dragging between the spline teeth of both members is prevented during press-fit coupling, to maximize the function of crownings to reduce press-fitting load and provide a sufficient coupling force, and facilitate disengagement of both members from each other and allow reuse of both members.

    摘要翻译: 一种花键联接结构,其中,在构件的压配合之前,凸构件和阴构件中的至少一个具有设置在其与另一构件相对的端部处的压入引导面。 压入引导面包括多个引导面部分,其平滑地将一个部件的花键齿的端部和底部平台互连以形成轴向向外的扩展的弧形;多个第二引导面部分,其平滑地互连花键齿的齿顶 并且端部形成轴向向外扩展的弧,并且多个第三引导面部分使花键齿的齿面与第二引导面部分平滑地互连,以形成轴向向外扩展的弧。 第一,第二和第三引导面部分彼此平滑地连接。 因此,在压配合期间防止两个构件的花键齿之间的拖动,以最大限度地发挥冠部的功能,以减小压配合载荷并提供足够的联接力,并且有助于两个构件彼此分离并允许再次使用 两个成员。

    Semiconductor Device
    2.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号:US20080061384A1

    公开(公告)日:2008-03-13

    申请号:US11936443

    申请日:2007-11-07

    IPC分类号: H01L29/78

    摘要: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

    摘要翻译: 在硅衬底1上形成扩散层2-5,并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,以便成为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1,使用表面为(111)晶面的其中之一,以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为(111)的基板的情况下, 在使用表面为(001)晶面的硅衬底的情况下,氧的扩散系数小于氧的扩散系数的1/100,并且控制氧扩散。 因此,控制氧扩散,防止漏电流的产生,提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

    Non-volatile phase-change memory and manufacturing method thereof
    3.
    发明申请
    Non-volatile phase-change memory and manufacturing method thereof 审中-公开
    非易失性相变存储器及其制造方法

    公开(公告)号:US20080006851A1

    公开(公告)日:2008-01-10

    申请号:US11825401

    申请日:2007-07-06

    IPC分类号: G11C11/00

    摘要: In a non-volatile phase-change memory comprising: an interlayer dielectric film and a plug formed on one main surface side of a silicon substrate; a phase-change film which can take a different electric resistivity depending on a phase change and is provided on surfaces of the interlayer dielectric film and the plug; and an upper electrode film formed on an upper surface of the phase-change film, a relation between a film thickness of the phase-change film and an amount of protrusion of the upper electrode film from the plug is set to 0.3≦L/T≦1. Thus, a density of current flowing through the phase-change film near the outer periphery of the plug is reduced, thereby suppressing migration and enabling rewriting with low energy. Accordingly, a reliable non-volatile phase-change memory can be achieved.

    摘要翻译: 一种非易失性相变存储器,包括:层间电介质膜和形成在硅衬底的一个主表面侧上的插塞; 可以根据相变取得不同的电阻率并设置在层间绝缘膜和插头的表面上的相变膜; 以及形成在相变膜的上表面上的上电极膜,相变膜的膜厚与上电极膜与插塞的突出量之间的关系设定为0.3 <= L / T <= 1。 因此,流过插塞外周附近的相变膜的电流密度降低,从而抑制迁移并能够以低能量进行重写。 因此,可以实现可靠的非易失性相变存储器。

    Semiconductor laser module and optical transmitter
    4.
    发明授权
    Semiconductor laser module and optical transmitter 有权
    半导体激光模块和光发射机

    公开(公告)号:US06963593B2

    公开(公告)日:2005-11-08

    申请号:US10632350

    申请日:2003-07-31

    CPC分类号: H01S5/02216 H01S5/02284

    摘要: For preventing an optical axis from shifting due to a heat cycle in a semiconductor laser module, or in a optical transmitter, the semiconductor laser module comprises, a semiconductor laser element, a frame for storing the semiconductor laser element therein, an optical fiber fixing portion being connected to the frame; and a flange being connected to the frame, and having a fixing portion for fixing the frame on a substrate, wherein the flange has a narrow width region between a fixing region, including a foxing portion with the substrate therein, and the frame, and the narrow width region is narrower than width of the fixing region.

    摘要翻译: 为了防止光轴由于半导体激光器模块或光发射器中的热循环而偏移,半导体激光器模块包括半导体激光元件,用于存储半导体激光元件的框架,光纤固定部分 连接到框架; 和凸缘连接到框架上,并具有用于将框架固定在基板上的固定部分,其中凸缘在包括具有其中的基板的一个固定区域和该框架之间的窄的区域之间具有窄的宽度区域, 窄宽度区域比固定区域的宽度窄。

    Insertion support system for specifying a location of interest as an arbitrary region and also appropriately setting a navigation leading to the specified region
    7.
    发明授权
    Insertion support system for specifying a location of interest as an arbitrary region and also appropriately setting a navigation leading to the specified region 有权
    插入支持系统,用于将感兴趣的位置指定为任意区域,并且还适当地设置导向指定区域的导航

    公开(公告)号:US08049777B2

    公开(公告)日:2011-11-01

    申请号:US11412397

    申请日:2006-04-27

    IPC分类号: A62B1/04

    摘要: According to an insertion support system of the present invention, when a biopsy area is specified at a periphery of the bronchi, the barycenter of the biopsy area is extracted. A circle centering on the barycenter is determined as a search area. The search area is expanded until the bronchi are located within the search area. A point in the search area to which the bronchi first reach is determined as an end point. A first route choice connecting the end point and a start point is determined. If the first route choice has not been registered yet, the first route choice is registered as a first registered route. Accordingly, a location of interest can be specified as an arbitrary region, and navigation leading to the specified region is appropriately set.

    摘要翻译: 根据本发明的插入支撑系统,当在支气管周边指定活检区域时,提取活检区域的重心。 以重心为中心的圆确定为搜索区域。 搜索区域扩展到支气管位于搜索区域内。 支气管首先到达的检索区域的一个点被确定为终点。 确定连接终点和起始点的第一路线选择。 如果第一路线选择尚未登记,则将第一路线选择登记为第一登记路线。 因此,可以将感兴趣的位置指定为任意区域,并且适当地设定导向指定区域的导航。

    Semiconductor laser module
    9.
    发明授权
    Semiconductor laser module 有权
    半导体激光模块

    公开(公告)号:US06961357B2

    公开(公告)日:2005-11-01

    申请号:US10632331

    申请日:2003-07-31

    摘要: In a semiconductor laser module, in order to sufficiently reduce the thermal stress arising in a due to the bonding of elements when they are packaged and to improve the yield of production, the semiconductor laser module is provided with a semiconductor laser element, a submount bonded to the semiconductor laser element with a solder layer in-between and thereby mounted with it, and a base mounted with this submount with another solder layer in-between. Herein, T/W≧0.15 holds, where W is the width of the submount in the direction orthogonal to the optical axis of the semiconductor laser element and T is the thickness of the submount.

    摘要翻译: 在半导体激光器模块中,为了充分降低由于封装时的元件的接合而产生的热应力,并且为了提高生产成本,半导体激光器模块设置有半导体激光元件, 到具有焊料层的半导体激光元件,并且由此安装有焊料层,以及安装有该基座的基座,其间具有另一个焊料层。 这里,T / W> = 0.15,其中,W是与基板的光轴正交的方向上的基台的宽度,T是基台的厚度。

    Semiconductor device
    10.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:US20050179133A1

    公开(公告)日:2005-08-18

    申请号:US10975448

    申请日:2004-10-29

    CPC分类号: H01L27/11206 H01L27/112

    摘要: A semiconductor device provided with a mechanism for recording information is intended to provide a highly reliable one time programmable memory and to provide one time programmable memories at a high yield. In a one time programmable memory, a state in which the electrical resistance is high is varied to another state in which it is low by silicifying a metal with silicon and matching the high resistance state (a metal/silicon separated state) and the low resistance state (a silicide state) to 0 and 1, respectively, wherein there is used an underlayer material which reduces the interfacial energy in the interface with the silicide layer, which constitutes the low resistance state.

    摘要翻译: 设置有用于记录信息的机构的半导体器件旨在提供高度可靠的一次可编程存储器,并以高产量提供一次可编程存储器。 在一次可编程存储器中,电阻高的状态通过用硅硅化硅并匹配高电阻状态(金属/硅分离状态)和低电阻而变化到另一个低电位的状态 状态(硅化物状态)分别为0和1,其中使用降低与构成低电阻状态的硅化物层的界面中的界面能的底层材料。