摘要:
A high molecular weight polyethylene prepared by preliminary polymerization is added at the time of main polymerization of an olefin, for example, propylene, to prepare an olefin (co)polymer composition comprising the above high molecular weight polyethylene finely dispersed as fine particles in the polyolefin, such as polypropylene, and a cross-linked structure is formed in the olefin (co)polymer composition. This process can provide a modified olefin (co)polymer composition improved in the strength in a molten state in terms of melt tension or the like and in crystallization temperature and excellent in moldability such as high-speed producibility, and a molded modified olefin (co)polymer composition excellent in properties such as heat resistance and rigidity.
摘要:
A plastic molded product of olefin (co)polymer composition comprises 0.01-5.0 weight parts high molecular weight polyethylene with an intrinsic viscosity &eegr;E in the range of 15-100 dl/g measured in 135° C. tetralin and preferably 100 weight parts polypropylene. The high molecular weight polyethylene has an average particle size in the range of 1-5000 nm and is finely dispersed as fine granules in the polypropylene, so that high melt strength and high crystallization temperature are attained, enabling various molding methods to be performed with high speed productivity. Using the polymer composition, plastics such as a resin foam, a film, a sheet, a layered plastic article with a coated substrate surface, a hollow plastic article, an injection molded plastic article, a fiber, a nonwoven web or a continuous tube-shaped plastic are provided. The olefin (co)polymer composition is obtained by preparing high molecular weight polyethylene granules using e.g. a titanium transition metal compound catalyst, and adding these, e.g. as a polymerization catalyst of propylene, singly or together with a polyolefin preparing catalyst.
摘要:
An olefin (co-)polymer composition including 0.01 to 5.0 weight parts of high molecular weight polyethylene which is an ethylene homopolymer or an ethylene-olefin copolymer containing 50 weight % or more of an ethylene polymerization unit; and 100 weight parts of an olefin (co-)polymer other than the high molecular weight polyethylene, wherein said high molecular weight polyethylene has an intrinsic viscosity [.eta..sub.E ] of 15 to 100 dl/g measured in tetralin at 135.degree. C. or more, and said high molecular weight polyethylene exists as dispersed fine particles having a numerical average particle size of 1 to 5000 nm.
摘要:
Disclosed is a catalyst for olefin (co-)polymerization comprising a transition metal compound catalytic component which contains at least a titanium compound and an &agr;-olefin (co-)polymer (A) supported by the catalyst, wherein said &agr;-olefin (co-)polymer (A) has an intrinsic viscosity (&eegr;) of 15 dl/g to 100 dl/g measured in tetrahydronaphthalene at 135° C., and the content of said olefin (co-)polymer (a) is 0.01 to 5000 g for 1 g of the transition compound catalytic component.
摘要:
A single-shaft semi-automatic hinge, wherein a first cam and a second cam fitted on the single shaft of the hinge passing therethrough are abutted on each other with pressure application by an elastic member, thereby generating a rotational friction torque; a region of the first cam and the second cam in which a liquid crystal portion can rotate from a state in which a main body portion and the liquid crystal portion are folded to a fully open state is set narrower than a region in which the hinge can rotate.
摘要:
Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B.
摘要:
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:通过使用含有至少一些铟的(Al,In,Ga)N成核层,通过金属有机化学气相沉积(MOCVD)增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地,该方法包括将衬底装载到反应器中,在氮气和/或氢气和/或氨气流下加热衬底,在加热衬底上沉积In x Ga 1-x N成核层,在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层,并在氮气过压下冷却该衬底。
摘要:
A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译:在图案化衬底上的氮化物发光二极管,包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层,其中0
摘要:
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译:(Al,In,Ga,B)N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态,导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子,例如Zn或C。
摘要:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.