摘要:
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要:
In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要:
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要:
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要:
A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要:
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要:
A process and an apparatus is disclosed for forming refractory metal layers employing pulse nucleation to minimize formation of a concentration boundary layer during nucleation. The surface of a substrate is nucleated in several steps. Following each nucleation step is a removal step in which all reactants and by-products of the nucleation process are removed from the processing chamber. Removal may be done by either rapidly evacuating the processing chamber, rapidly introducing a purge gas therein or both. After removal of the process gas and by-products from the processing chamber, additional nucleation steps may be commenced to obtain a nucleation layer of desired thickness. After formation of the nucleation layer, a layer is formed adjacent to the nucleation layer using standard bulk deposition techniques.
摘要:
A system and method for sequencing rotatable images are disclosed. In at least one embodiment, an image database contains an at least one image collection comprising a plurality of view sets. The view sets each comprise a parallel sequence of images that depicts the same sequentially formatted subject matter as the other view sets in the image collection, but from a unique common perspective point. A unique view index is assigned to each view set in the at least one image collection, while a unique frame index is assigned to each image within each view set. Using these view and frame indices, the content module allows the user to dynamically and selectively choose the common perspective point at which to view the sequentially formatted subject matter at any step in the sequence of images, thereby providing a 360 degree, selectively rotatable view of the subject matter.
摘要:
The invention provides an apparatus for excluding unwanted deposition at the edge of a substrate which prevents excess purge gas from flowing over the surface of the substrate at the region adjacent a notch on a substrate. Another aspect of the invention provides a wider purge gas channel that prevents excess purge gas from flowing over the surface of the substrate. Still another aspect of the present invention provides a purge gas guide that includes a notch therein to prevent excess purge gas from adversely affecting deposition at the vicinity of the substrate notch.
摘要:
A system and method for sequencing rotatable images are disclosed. In at least one embodiment, an image database contains an at least one image collection comprising a plurality of view sets. The view sets each comprise a parallel sequence of images that depicts the same sequentially formatted subject matter as the other view sets in the image collection, but from a unique common perspective point. A unique view index is assigned to each view set in the at least one image collection, while a unique frame index is assigned to each image within each view set. Using these view and frame indices, the content module allows the user to dynamically and selectively choose the common perspective point at which to view the sequentially formatted subject matter at any step in the sequence of images, thereby providing a 360 degree, selectively rotatable view of the subject matter.