利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

239 条记录 (耗时 0.038 秒)

    Clamping ring apparatus for processing semiconductor wafers
    1.
    发明授权
    Clamping ring apparatus for processing semiconductor wafers 失效
    用于处理半导体晶圆的夹紧环装置

    公开(公告)号：US5316278A

    公开(公告)日：1994-05-31

    申请号：US947212

    申请日：1992-09-18

    申请人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alfred Mak ,  James F. Roberts ,  Simon W. Tam ,  Wen T. Chang

    发明人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alfred Mak ,  James F. Roberts ,  Simon W. Tam ,  Wen T. Chang

    IPC分类号： H01L21/687 ,  B25B1/00

    CPC分类号： H01L21/68721 ,  Y10S269/903

    摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.

    摘要翻译： 公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封， 通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列 可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。 在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或 来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

    Compound clamp ring for semiconductor wafers
    2.
    发明授权
    Compound clamp ring for semiconductor wafers 失效
    用于半导体晶片的复合夹环

    公开(公告)号：US5421401A

    公开(公告)日：1995-06-06

    申请号：US187231

    申请日：1994-01-25

    申请人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alan F. Morrison ,  Virendra V. S. Rana ,  James F. Roberts ,  Ashok K. Sinha ,  Simon Tam

    发明人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alan F. Morrison ,  Virendra V. S. Rana ,  James F. Roberts ,  Ashok K. Sinha ,  Simon Tam

    IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/687 ,  F28F7/00 ,  C23C16/00

    CPC分类号： H01L21/68721 ,  C23C14/50 ,  C23C16/4585 ,  Y10S269/903

    摘要： A compound clamp ring secures a semiconductor wafer having a wafer flat portion to a wafer pedestal during wafer processing while maintaining a continuous seal between the wafer edges and the wafer pedestal to prevent leakage of coolant gases circulated at the backside of the wafer into the process environment. The clamp ring has an annular wafer clamp surface adapted to press a round portion of the wafer into sealing abutment with the wafer pedestal. A cavity formed in the clamp ring securely receives a comb-like array of resilient flexures that are adapted to apply a yieldable bias to the flat portion of the wafer to complete the seal between the wafer and the pedestal at the flat portion of the wafer; and encloses the flexures to shield the flexures from process gases.

    摘要翻译： 复合夹环在晶片处理期间将具有晶片平坦部分的半导体晶片固定到晶片基座，同时保持晶片边缘和晶片基座之间的连续密封，以防止在晶片背面循环的冷却剂气体泄漏到工艺环境中 。 夹紧环具有适于将晶圆的圆形部分压紧到与晶片基座密封抵接的环形晶片夹紧表面。 形成在夹紧环中的空腔牢固地容纳弹性挠曲的梳状阵列，其适于对晶片的平坦部分施加可屈服的偏压，以在晶片的平坦部分处完成晶片和基座之间的密封; 并包围挠曲件以将工件气体的挠曲屏蔽。

    Clamping ring and susceptor therefor
    3.
    发明授权
    Clamping ring and susceptor therefor 失效
    夹环和感受器

    公开(公告)号：US5326725A

    公开(公告)日：1994-07-05

    申请号：US31259

    申请日：1993-03-11

    申请人： Semyon Sherstinsky ,  Charles C. Harris ,  Mei Chang ,  Dale R. Du Bois ,  James F. Roberts ,  Susan Telford ,  Ronald L. Rose ,  Meng C. Tseng ,  Karl A. Littau

    发明人： Semyon Sherstinsky ,  Charles C. Harris ,  Mei Chang ,  Dale R. Du Bois ,  James F. Roberts ,  Susan Telford ,  Ronald L. Rose ,  Meng C. Tseng ,  Karl A. Littau

    IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

    摘要： A clamping ring having a downwardly extending finger that mates with a pocket in the periphery of a susceptor for supporting a wafer in a chemical vapor deposition chamber, provides alignment of the clamping ring, the wafer and the susceptor. A source of inert gas connected to the pocket provides a positive pressure in the pocket that prevents reactive gas in the chamber from reaching the edge and backside of the wafer. A source of vacuum connected to the susceptor support surface ensures good contact between the wafer and the susceptor.The clamping ring also has a lip extending over the top surface of the wafer having a rear surface that has a negative angle with respect to the upper surface of the clamping ring, providing a knife edge seal to the wafer, reducing the area of contact between the clamping ring and the wafer and providing a reduced area of thermal contact between the clamping ring and the wafer.

    摘要翻译： 具有向下延伸的指状物的夹紧环，其与基座的周边中的口相配合，用于在化学气相沉积室中支撑晶片，提供夹紧环，晶片和基座的对准。 连接到口袋的惰性气体源在口袋中提供正压力，防止腔室中的反应性气体到达晶片的边缘和背面。 连接到基座支撑表面的真空源确保了晶片和基座之间良好的接触。 夹紧环还具有在晶片的顶表面上延伸的唇缘，其具有相对于夹紧环的上表面具有负角度的后表面，为晶片提供刀刃密封，从而减小了 夹紧环和晶片，并且在夹紧环和晶片之间提供减小的热接触面积。

    Etch chamber
    4.
    发明授权
    Etch chamber 失效
    蚀刻室

    公开(公告)号：US6123864A

    公开(公告)日：2000-09-26

    申请号：US327126

    申请日：1994-10-21

    申请人： Simon W. Tam ,  Semyon Sherstinsky ,  Mei Chang ,  Alan Morrison ,  Ashok Sinha

    发明人： Simon W. Tam ,  Semyon Sherstinsky ,  Mei Chang ,  Alan Morrison ,  Ashok Sinha

    IPC分类号： H01L21/687 ,  H05H1/00

    CPC分类号： H01L21/68721 ,  H01L21/68785 ,  H01J2237/022

    摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.

    摘要翻译： 修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。 腔室中的夹紧环盖由陶瓷制成。 槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。 用于被处理的基板的夹紧环也由陶瓷制成。 通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。 此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板 处理。 使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

    Etch chamber
    5.
    发明授权
    Etch chamber 失效
    蚀刻室

    公开(公告)号：US06270621B1

    公开(公告)日：2001-08-07

    申请号：US09593018

    申请日：2000-06-13

    申请人： Simon W. Tam ,  Semyon Sherstinsky ,  Mei Chang ,  Alan Morrison ,  Ashok Sinha

    发明人： Simon W. Tam ,  Semyon Sherstinsky ,  Mei Chang ,  Alan Morrison ,  Ashok Sinha

    IPC分类号： H01L2100

    CPC分类号： H01L21/68721 ,  H01J2237/022 ,  H01L21/68785

    摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.

    摘要翻译： 修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。 腔室中的夹紧环盖由陶瓷制成。 槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。 用于被处理的基板的夹紧环也由陶瓷制成。 通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。 此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板 处理。 使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

    Process for treating aluminum surfaces in a vacuum apparatus
    9.
    发明授权
    Process for treating aluminum surfaces in a vacuum apparatus 失效
    在真空装置中处理铝表面的方法

    公开(公告)号：US5201990A

    公开(公告)日：1993-04-13

    申请号：US704523

    申请日：1991-05-23

    申请人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

    发明人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

    IPC分类号： C23C16/44 ,  C23G5/00 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768

    CPC分类号： C23G5/00 ,  C23C16/4404 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/321 ,  H01L21/76877

    摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.

    摘要翻译： 描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。 该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。 当使用氮气时，等离子体也必须含有氢气。 当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害 房间。 在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。