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5 条记录 (耗时 0.037 秒)

    CLEANING OPTIMIZATION OF PECVD SOLAR FILMS
    4.
    发明申请
    CLEANING OPTIMIZATION OF PECVD SOLAR FILMS 审中-公开
    PECVD太阳能膜的清洁优化

    公开(公告)号：US20110171774A1

    公开(公告)日：2011-07-14

    申请号：US12967648

    申请日：2010-12-14

    申请人： Francimar C. Schmitt ,  Zheng Yuan ,  Yi Zheng ,  Fan Yang ,  Lipan Li

    发明人： Francimar C. Schmitt ,  Zheng Yuan ,  Yi Zheng ,  Fan Yang ,  Lipan Li

    IPC分类号： H01L31/0376

    CPC分类号： H01L31/03921 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1816 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.

    摘要翻译： 本发明的实施方案通常提供在基板处理室中形成多个薄膜单结或多结太阳能电池的方法。 在一个实施例中，一种用于处理多个薄膜太阳能电池基板的方法包括在单个处理室中顺序地在第一基板和室部件的表面上沉积第一未掺杂层和第一掺杂层，去除具有 去除来自处理室的掺杂和未掺杂的层，去除沉积在室组件上的第二掺杂层，以暴露下面的第一未掺杂层，其用作待处理室中待处理的第二衬底的调味层，以及顺序地沉积第二未掺杂层 以及处理室中的第二衬底上的第二掺杂层。 在一个示例中，第一未掺杂层是非晶硅或微晶硅。 可以以期望的间隔进行全部清洁处理，以在经常的调味过程之前露出室部件的表面，并且随后的沉积在处理室中进行。

    Process and apparatus for post deposition treatment of low dielectric materials
    5.
    发明授权
    Process and apparatus for post deposition treatment of low dielectric materials 有权
    低介电材料后沉淀处理工艺及设备

    公开(公告)号：US07910897B2

    公开(公告)日：2011-03-22

    申请号：US11923233

    申请日：2007-10-24

    申请人： Francimar C. Schmitt

    发明人： Francimar C. Schmitt

    IPC分类号： G01N21/00

    CPC分类号： H01L21/76829 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76835 ,  Y10T29/41

    摘要： Methods and apparatus are provided for processing a substrate with an ultraviolet curing process. In one aspect, the invention provides a method for processing a substrate including depositing a silicon carbide dielectric layer on a substrate surface and curing the silicon carbide dielectric layer with ultra-violet curing radiation. The silicon carbide dielectric layer may comprise a nitrogen containing silicon carbide layer, an oxygen containing silicon carbide layer, or a phenyl containing silicon carbide layer. The silicon carbide dielectric layer may be used as a barrier layer, an etch stop, or as an anti-reflective coating in a damascene formation technique.

    摘要翻译： 提供了用紫外线固化方法处理衬底的方法和装置。 一方面，本发明提供了一种处理衬底的方法，包括在衬底表面上沉积碳化硅电介质层并用紫外线固化辐射固化碳化硅电介质层。 碳化硅电介质层可以包括含氮碳化硅层，含氧碳化硅层或含有碳化硅的苯基层。 在大马士革形成技术中，碳化硅电介质层可用作阻挡层，蚀刻停止层或抗反射涂层。