摘要:
An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.
摘要:
Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译:提供了在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。 在一个实施例中,在衬底上形成含硅层的方法包括将衬底提供到处理室中,将具有含硅气体的气体混合物提供到处理室中,从远程等离子体源提供含氢气体,其耦合到 处理室,向处理室施加小于17.5mW / cm 2的RF功率,并在基板上形成含硅层。
摘要:
The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.
摘要:
Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.
摘要:
Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.
摘要:
An educational and training system allows organization and management of computers and course material used in teaching and administering classes of computer based information. Remote users access computers in laboratories or virtual classrooms as if they were actually using the computers within the laboratory or classroom. The system also allows management and tracking of the remote users and of other various course details.
摘要:
A system and method for retargeting video sequences are provided. A method for retargeting a video includes a plurality of frames includes determining saliency information for the plurality of frames, determining a cost metric for the video, and retargeting the video based on the cost metric to produce a retargeted video. The cost metric considers loss due to cropping, scaling, temporal factors, and spatial factors. The retargeting makes use of a crop window for each frame in the plurality of frames.
摘要:
In one embodiment, a device is connected to a first computer via a first local communication port of the first computer. If the device is configured to autoconnect with a second computer upon connection of the device to the first computer, a remote access session is established between the first computer and the second computer. Low-level local communication from the device is intercepted at the first local communication port of the first computer. The low-level local communication is transmitted from the first computer to the second computer via the remote access session. The low-level local communication is injected to a second local communication port of the second computer to thereby provide an autoconnection of the device to the second computer.
摘要:
An educational and training system allows organization and management of computers and course material used in teaching and administering classes of computer based information. Remote users access computers in laboratories or virtual classrooms as if they were actually using the computers within the laboratory or classroom. The system also allows management and tracking of the remote users and of other various course details.
摘要:
A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.