公开(公告)号：US06711195B2

公开(公告)日：2004-03-23

申请号：US10087422

申请日：2002-02-28

申请人： Ying-Lan Chang ,  Scott W. Corzine ,  Russell D. Dupuis ,  Min Soo Noh ,  Jae Hyun Ryou ,  Michael R. T. Tan ,  Ashish Tandon

发明人： Ying-Lan Chang ,  Scott W. Corzine ,  Russell D. Dupuis ,  Min Soo Noh ,  Jae Hyun Ryou ,  Michael R. T. Tan ,  Ashish Tandon

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/3422 ,  H01S5/343 ,  H01S5/34306

摘要： The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.

摘要翻译： 长波长光子器件包括有源区，该有源区包括至少一个量子阱层材料的量子阱层，该量子阱层材料包括其中y> = 0的In y Ga 1-y As Sb，并且另外包括相应数量的势垒层 包括镓和磷的阻挡层材料。 阻挡层材料的导带能级大于量子阱层材料的导带能级，并且具有小于量子阱层材料的价带能级的价带能级。

公开(公告)号：US07033938B2

公开(公告)日：2006-04-25

申请号：US10785747

申请日：2004-02-23

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.

摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

公开(公告)号：US07269196B2

公开(公告)日：2007-09-11

申请号：US10885952

申请日：2004-07-06

申请人： Ashish Tandon ,  Michael R. T. Tan ,  Ying-Lan Chang

发明人： Ashish Tandon ,  Michael R. T. Tan ,  Ying-Lan Chang

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/18358 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S5/34386

摘要： The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

摘要翻译： 该方法包括形成Al x Ga 1-x As的阻挡层，在阻挡层之间形成InGaAs的量子阱层，并在量子阱之间形成界面层 层和每个阻挡层。

公开(公告)号：US07034331B2

公开(公告)日：2006-04-25

申请号：US10861144

申请日：2004-06-04

申请人： Ying-Lan Chang ,  Ashish Tandon ,  Michael H. Leary ,  Michael R. T. Tan

发明人： Ying-Lan Chang ,  Ashish Tandon ,  Michael H. Leary ,  Michael R. T. Tan

IPC分类号： H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/3095 ,  H01S5/32366 ,  H01S5/34306 ,  Y10S257/918

摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

公开(公告)号：US06756325B2

公开(公告)日：2004-06-29

申请号：US10140625

申请日：2002-05-07

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.

摘要翻译： 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。

公开(公告)号：US06764926B2

公开(公告)日：2004-07-20

申请号：US10106472

申请日：2002-03-25

申请人： Tetsuya Takeuchi ,  Ying-Lan Chang ,  David P. Bour ,  Michael H. Leary ,  Michael R. T. Tan ,  Andy Luan

发明人： Tetsuya Takeuchi ,  Ying-Lan Chang ,  David P. Bour ,  Michael H. Leary ,  Michael R. T. Tan ,  Andy Luan

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C23C16/301 ,  C23C16/4401 ,  C23C16/4405 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262

摘要： A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.

摘要翻译： 提出了一种制造高品质InGaAsN半导体器件的方法。 该方法允许使用单个MOCVD反应器制造高质量的InGaAsN半导体器件，同时避免铝污染。

公开(公告)号：US06931044B2

公开(公告)日：2005-08-16

申请号：US10368274

申请日：2003-02-18

申请人： David P. Bour ,  Michael R. T. Tan ,  Ying-Lan Chang

发明人： David P. Bour ,  Michael R. T. Tan ,  Ying-Lan Chang

IPC分类号： H01S5/20 ,  H01L33/06 ,  H01S5/00 ,  H01S5/183 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3422 ,  H01S5/34306 ,  H01S5/34353

摘要： A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.

摘要翻译： 提供了一种利用AlGaInP约束结构来改善GaAsSb材料的温度性能的方法和装置。 包含GaAsSb量子阱层和（In）GaAs势垒层的有源区夹在两个AlGaInP限制层之间。 AlGaInP约束结构提供了足够的电子限制，从而提高了GaAsSb / GaAs异质结构相对于增加温度的阈值电流的稳定性。

公开(公告)号：US20060007974A1

公开(公告)日：2006-01-12

申请号：US10885952

申请日：2004-07-06

申请人： Ashish Tandon ,  Michael Tan ,  Ying-Lan Chang

发明人： Ashish Tandon ,  Michael Tan ,  Ying-Lan Chang

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/18358 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S5/34386

摘要： The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

摘要翻译： 该方法包括形成Al x Ga 1-x As的阻挡层，在阻挡层之间形成InGaAs的量子阱层，并在量子阱之间形成界面层 层和每个阻挡层。

公开(公告)号：US07016392B2

公开(公告)日：2006-03-21

申请号：US10427585

申请日：2003-04-30

申请人： Ashish Tandon ,  Michael H. Leary ,  Ying-Lan Chang

发明人： Ashish Tandon ,  Michael H. Leary ,  Ying-Lan Chang

IPC分类号： H01S3/08

CPC分类号： H01S5/3095 ,  H01S5/18313 ,  H01S5/18358

摘要： The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.

摘要翻译： 发光器件包括衬底，有源区和隧道结结构。 衬底包括砷化镓。 有源区包括n型间隔层和p型间隔层。 隧道结结构包括邻近p型间隔层的p型隧道结层，p型隧道结层和n型隧道结层之间的n型隧道结层和隧道结。 p型隧道结层包括包含镓和砷的p型第一半导体材料层。 n型隧道结层包括包含铟，镓和磷的n型第二半导体材料层。 在第二半导体材料中可获得的高掺杂浓度降低了隧道结处的耗尽区的宽度，并且增加了穿过隧道结的静电场，从而减少了发生隧穿的反向偏压。

公开(公告)号：US20050184303A1

公开(公告)日：2005-08-25

申请号：US10786800

申请日：2004-02-25

申请人： Ashish Tandon ,  Michael Leary ,  Michael Tan ,  Ying-Lan Chang

发明人： Ashish Tandon ,  Michael Leary ,  Michael Tan ,  Ying-Lan Chang

IPC分类号： H01L29/22 ,  H01L33/14 ,  H01S5/00 ,  H01S5/183 ,  H01S5/32

CPC分类号： H01L33/145 ,  H01S5/18313 ,  H01S5/3201

摘要： A strain compensating structure comprises a strain compensating layer adjacent an oxide-forming layer. The strain compensating layer compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer.

摘要翻译： 应变补偿结构包括邻近氧化物形成层的应变补偿层。 应变补偿层补偿由于至少部分氧化物形成层的氧化引起的晶格参数的变化。