公开(公告)号：US20160322167A1

公开(公告)日：2016-11-03

申请号：US15205418

申请日：2016-07-08

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01G9/00 ,  H01L31/18 ,  H01L31/0725 ,  H01G9/20 ,  H01L31/0236 ,  H01L31/028

CPC分类号： H01L31/1808 ,  H01L27/302 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/0725 ,  H01L51/4213 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of making a non-toxic perovskite/inorganic thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer.

摘要翻译： 一种制造无毒钙钛矿/无机薄膜串联太阳能电池的方法，包括以下步骤：在廉价的基板上沉积织构化的氧化物缓冲层，在缓冲层上沉积来自共晶合金的金属 - 无机膜; 并且在金属 - 无机膜上沉积钙钛矿元素，从而从金属 - 无机膜形成基于金属的钙钛矿层，将金属掺入钙钛矿层中。

公开(公告)号：US20120252192A1

公开(公告)日：2012-10-04

申请号：US13495699

申请日：2012-06-13

申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari ,  Jifeng Liu

发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari ,  Jifeng Liu

IPC分类号： H01L21/20

CPC分类号： C30B13/02 ,  C30B13/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02612 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays

摘要翻译： 廉价的半导体通过在廉价的衬底上沉积单晶或大晶粒硅来制造。 这些半导体在足够低的温度（例如低于玻璃熔点的温度）下生产。 所生产的半导体适用于诸如光电或显示器的半导体器件

公开(公告)号：US20110033969A1

公开(公告)日：2011-02-10

申请号：US12903750

申请日：2010-10-13

申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

IPC分类号： H01L31/18 ,  B82Y99/00

CPC分类号： H01L31/1804 ,  C30B11/12 ,  C30B23/025 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/02653 ,  H01L31/0216 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0475 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/18

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

摘要翻译： 公开了从包含金属和半导体的共晶合金制造半导体膜的方法。 通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。 具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。 这样的电影可以广泛应用于光伏和显示技术。

公开(公告)号：US20170271622A1

公开(公告)日：2017-09-21

申请号：US15611343

申请日：2017-06-01

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01L51/52 ,  H01L31/0236 ,  H01L31/0216 ,  H01L29/786 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/0749 ,  H01L31/0725 ,  H01L31/0352

CPC分类号： H01L29/78678 ,  H01L27/302 ,  H01L31/02366 ,  H01L31/032 ,  H01L31/03365 ,  H01L31/035227 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/043 ,  H01L31/072 ,  H01L31/0749 ,  H01L51/5225 ,  H01L2251/5353 ,  Y02E10/541

摘要： Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

公开(公告)号：US20170207033A1

公开(公告)日：2017-07-20

申请号：US15479388

申请日：2017-04-05

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01G9/20 ,  H01L51/44 ,  H01L51/42

CPC分类号： H01G9/2009 ,  H01G9/2027 ,  H01L27/302 ,  H01L31/043 ,  H01L31/078 ,  H01L51/0032 ,  H01L51/4213 ,  H01L51/4226 ,  H01L51/445 ,  Y02E10/549

摘要： A bi-facial tandem solar cell and a method of making a non-toxic perovskite/inorganic thin-film tandem solar cell stable, having matching bandgaps and a hysteresis free design including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer wherein said perovskite layer is stable, hysteresis-free, and has a bandgap that matches the bandgap of the metal-inorganic.

公开(公告)号：US20160276608A1

公开(公告)日：2016-09-22

申请号：US15138774

申请日：2016-04-26

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01L51/42 ,  H01L51/50 ,  H01L51/52

CPC分类号： H01L51/4213 ,  H01L31/0392 ,  H01L51/0096 ,  H01L51/50 ,  H01L51/5296 ,  H01L2031/0344 ,  Y02E10/549

摘要： A semiconductor assembly including substantially non-crystalline substrate having a predetermined softening point, a textured buffer layer deposited on said substrate, a polymer film deposited on said buffer layer, and an inorganic or silicon inorganic film deposited on said polymer film. The buffer layer, polymer film, and inorganic or silicon inorganic film are each deposited at a respective deposition temperature that is below the softening point of the substrate. A method is disclosed for making a hybrid solar cell comprising organic and inorganic materials on an inexpensive substrate, such as glass. The materials are deposited on the substrate at low temperatures using eutectics and crystalline buffer layers such as MgO and Al2O3. Such a device can also be used for OLETs (organic light emitting transistors) and OLEDs (organic light emitting diodes) used in displays.

摘要翻译： 包括具有预定软化点的基本上非结晶的衬底，沉积在所述衬底上的纹理缓冲层，沉积在所述缓冲层上的聚合物膜以及沉积在所述聚合物膜上的无机或硅无机膜的半导体组件。 缓冲层，聚合物膜和无机或硅无机膜各自沉积在低于基底的软化点的各自的沉积温度。 公开了一种用于在诸如玻璃的廉价基板上制造包含有机和无机材料的混合太阳能电池的方法。 使用共晶体和结晶缓冲层如MgO和Al 2 O 3在低温下将材料沉积在衬底上。 这样的器件也可以用于显示器中使用的OLET（有机发光晶体管）和OLED（有机发光二极管）。

公开(公告)号：US09349995B2

公开(公告)日：2016-05-24

申请号：US14571800

申请日：2014-12-16

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01L51/52 ,  H01L31/0392 ,  H01L51/00 ,  H01L51/42

CPC分类号： H01L51/4213 ,  H01L31/0392 ,  H01L51/0096 ,  H01L51/50 ,  H01L51/5296 ,  H01L2031/0344 ,  Y02E10/549

摘要： A method is disclosed for making a hybrid solar cell comprising organic and inorganic materials on an inexpensive substrate, such as glass. The materials are deposited on the substrate at low temperatures using eutectics and crystalline buffer layers such as MgO and Al2O3. Such a device can also be used for OLETs and OLEDs used in displays.

摘要翻译： 公开了一种用于在诸如玻璃的廉价基板上制造包含有机和无机材料的混合太阳能电池的方法。 使用共晶体和结晶缓冲层如MgO和Al 2 O 3在低温下将材料沉积在衬底上。 这种设备也可以用于显示器中使用的OLET和OLED。

公开(公告)号：US10199518B2

公开(公告)日：2019-02-05

申请号：US15457314

申请日：2017-03-13

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Ashok Chaudhari

IPC分类号： C30B25/02 ,  H01L31/0236 ,  H01L31/0687 ,  H01L31/18 ,  H01G9/20 ,  C30B23/02 ,  C30B29/52 ,  C30B19/00 ,  C30B25/18 ,  H01L21/02

摘要： A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

公开(公告)号：US10062797B2

公开(公告)日：2018-08-28

申请号：US15213998

申请日：2016-07-19

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01L31/0725 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/032

CPC分类号： H01L31/0725 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/0328 ,  H01L31/18 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS2, and SnS3—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.

公开(公告)号：US09978532B2

公开(公告)日：2018-05-22

申请号：US15479388

申请日：2017-04-05

申请人： Ashok Chaudhari

发明人： Ashok Chaudhari

IPC分类号： H01G9/20 ,  H01L51/42 ,  H01L51/44

CPC分类号： H01G9/2009 ,  H01G9/2027 ,  H01L27/302 ,  H01L31/043 ,  H01L31/078 ,  H01L51/0032 ,  H01L51/4213 ,  H01L51/4226 ,  H01L51/445 ,  Y02E10/549

摘要： A bi-facial tandem solar cell and a method of making a non-toxic perovskite/inorganic thin-film tandem solar cell stable, having matching bandgaps and a hysteresis free design including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer wherein said perovskite layer is stable, hysteresis-free, and has a bandgap that matches the bandgap of the metal-inorganic.