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    Apparatus and method for plasma assisted deposition
    2.
    发明授权
    Apparatus and method for plasma assisted deposition 有权
    用于等离子体辅助沉积的装置和方法

    公开(公告)号：US07779784B2

    公开(公告)日：2010-08-24

    申请号：US11146309

    申请日：2005-06-06

    申请人： Chen-An Chen ,  Avgerinos Gelatos ,  Michael X. Yang ,  Ming Xi ,  Mark M. Hytros

    发明人： Chen-An Chen ,  Avgerinos Gelatos ,  Michael X. Yang ,  Ming Xi ,  Mark M. Hytros

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/515 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843

    摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

    摘要翻译： 本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。 该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。 一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。 在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。 该方法的一个实施方案包括在单个室中执行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

    High temperature resistive heater for a process chamber
    10.
    发明授权
    High temperature resistive heater for a process chamber 失效
    用于处理室的高温电阻加热器

    公开(公告)号：US6066836A

    公开(公告)日：2000-05-23

    申请号：US717780

    申请日：1996-09-23

    申请人： Steven Aihua Chen ,  Henry Ho ,  Mei Chang ,  Ming Xi ,  Chen-An Chen ,  Chiliang Chen

    发明人： Steven Aihua Chen ,  Henry Ho ,  Mei Chang ,  Ming Xi ,  Chen-An Chen ,  Chiliang Chen

    IPC分类号： C23C16/46 ,  F27D99/00 ,  F27B5/14 ,  C23C16/00

    CPC分类号： F27D99/0006 ,  C23C16/46 ,  F27D2099/0008

    摘要： A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.

    摘要翻译： 用于诸如化学气相沉积室的处理装置的电阻加热结构。 该系统包括电阻加热衬底保持器，其包括支撑表面和支撑轴，该保持器由第一材料构成。 支撑表面包括电阻加热元件。 支撑轴具有给定的长度，并且通过孔允许热电偶接合支撑表面和电导体以耦合到支撑表面中的电阻加热元件。 金属安装结构联接到支撑轴并固定到处理装置以在保持器和安装结构内形成密封环境，以保护电引线和热电偶免受过程环境的影响。