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    Molecular-beam epitaxy system and method including hydrogen treatment
    3.
    发明授权
    Molecular-beam epitaxy system and method including hydrogen treatment 失效
    分子束外延系统和方法包括氢处理

    公开(公告)号：US4239584A

    公开(公告)日：1980-12-16

    申请号：US947912

    申请日：1978-09-29

    申请人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki

    发明人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki

    IPC分类号： C30B23/02 ,  B05D3/06

    CPC分类号： C30B23/02 ,  C30B29/40 ,  C30B29/42 ,  Y10S117/906 ,  Y10S148/06 ,  Y10S148/169

    摘要： A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy.

    摘要翻译： 一种包括在用于外延生长的分子束蒸发过程中使用氢的系统和方法，例如在形成GaAs和GaAlAs以及用于n型掺杂剂杂质的Sn中。 在分子束外延系统中，在外延生长期间引入的氢束和分子束一起被引导到衬底上，使得相对小体积的氢的存在影响外延生长材料的物理表面性质， 因此外延的质量。

    FET With heterojunction induced channel
    5.
    发明授权
    FET With heterojunction induced channel 失效
    FET异质结诱发通道

    公开(公告)号：US4538165A

    公开(公告)日：1985-08-27

    申请号：US586497

    申请日：1984-03-05

    申请人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki ,  Emilio E. Mendez

    发明人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki ,  Emilio E. Mendez

    IPC分类号： H01L29/10 ,  H01L29/43 ,  H01L29/778 ,  H01L29/80 ,  H01L29/205

    CPC分类号： H01L29/432 ,  H01L29/1029 ,  H01L29/7783

    摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.

    摘要翻译： 可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。 通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。 显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

    InAs-GaSb Tunnel diode
    7.
    发明授权
    InAs-GaSb Tunnel diode 失效
    InAs-GaSb隧道二极管

    公开(公告)号：US4371884A

    公开(公告)日：1983-02-01

    申请号：US227890

    申请日：1981-01-23

    申请人： Leo Esaki ,  Chin-An Chang

    发明人： Leo Esaki ,  Chin-An Chang

    IPC分类号： H01L29/205 ,  H01L29/885 ,  H01L29/88

    CPC分类号： H01L29/885 ,  H01L29/205

    摘要： Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quaternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode.

    摘要翻译： 公开了一种隧道二极管，其由p型GaSb的积聚区域和由由InGaSbAs组成的季铵化合物的薄层分离的n型InAs的蓄积区域组成。 这种二极管结构将p型和n型材料的两个积聚区域之间的界面从通常是欧姆结转变成隧道结转变。 这种隧道二极管不需要通常需要的隧道二极管的重掺杂。

    Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof
    8.
    发明申请
    Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof 审中-公开
    使用锡作为缓冲层的氮化铝基板结构及其制造方法

    公开(公告)号：US20070045607A1

    公开(公告)日：2007-03-01

    申请号：US11211673

    申请日：2005-08-26

    申请人： Nai-Chuan Chen ,  Chin-An Chang ,  Pen-Hsiu Chang ,  Chuan-Feng Shih ,  Wei-Chieh Lien

    发明人： Nai-Chuan Chen ,  Chin-An Chang ,  Pen-Hsiu Chang ,  Chuan-Feng Shih ,  Wei-Chieh Lien

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/12

    摘要： The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present method can form high-quality III-V AlGaInN nitride epitaxy layer to manufacture the vertical-conducted III-V AlGaInN nitride devices and utilize the high-reflection TiN surface to enhance the efficiency of the opti-electrical devices. The present invention can further prevent the silicon substrate forming the noncrystalline SiNx in the AlGaInN epitaxy process, so that the yield of the chip can be improved.

    摘要翻译： 本发明公开了一种使用TiN作为缓冲层的AlGaInN氮化物衬底结构及其制造方法。 本发明将具有（111）表面的TiN沉积到具有（111）表面的硅衬底上作为缓冲层，并且生长具有（0001）表面的III-V AlGaInN氮化物外延结构。 本发明方法可以形成高品质的III-V AlGaInN氮化物外延层，以制造垂直导电的III-V AlGaInN氮化物器件，并利用高反射TiN表面来提高光电器件的效率。 本发明可以进一步防止在AlGaInN外延工艺中形成非结晶SiN x x的硅衬底，从而可以提高芯片的产量。

    Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
    10.
    发明授权
    Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other 失效
    用于减少彼此接触的导体和/或半导体相互扩散的方法

    公开(公告)号：US4282043A

    公开(公告)日：1981-08-04

    申请号：US124187

    申请日：1980-02-25

    申请人： Chin-An Chang

    发明人： Chin-An Chang

    IPC分类号： H01L21/28 ,  H01L21/225 ,  H01L21/321 ,  H01L29/46 ,  B32B15/04 ,  H01L21/283

    CPC分类号： H01L21/321 ,  Y10T428/12889

    摘要： The interdiffusion at the interface between a metallic-type conductor or semiconductor and a second metallic-type conductor or semiconductor in intimate contact therewith due to elevated temperatures is reduced by subjecting a surface of at least one of the materials when at an elevated temperature to a gas which contains at least one component which changes the surface potential and work function of the surface which is subjected to the gas in a direction according to the relative electronegativities of the materials.

    摘要翻译： 金属型导体或半导体与由于升高的温度紧密接触的第二金属型导体或半导体之间的界面处的相互扩散通过使至少一种材料的表面在升高的温度下经受 气体，其含有至少一种组分，其改变根据材料的相对电负性的方向对经受气体的表面的表面电势和作用函数。