公开(公告)号：US20110180893A1

公开(公告)日：2011-07-28

申请号：US13007846

申请日：2011-01-17

申请人： Daiki MINEGISHI ,  Yasuhiro SATOH ,  Eiji MOCHIZUKI ,  Masayuki FUJISHIMA ,  Hiroshi MIURA

发明人： Daiki MINEGISHI ,  Yasuhiro SATOH ,  Eiji MOCHIZUKI ,  Masayuki FUJISHIMA ,  Hiroshi MIURA

IPC分类号： H01L31/0232 ,  H01L21/66

CPC分类号： H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

摘要： An imaging module includes an imaging chip including a micro-lens guiding incident light and an imaging element in a semiconductor substrate and converting the incident light into an electric signal, and a polarizing glass chip including a polarizing filter glass having a polarizer determining a polarization direction of the incident light arranged on a transparent substrate such that the polarizer faces the micro-lens and a spacer member connected to the polarizing filter glass to adjust a gap between the polarizer and the micro-lens of the imaging chip. In the imaging module, a melt-bonding surface of the spacer member is melt-bonded to the semiconductor substrate such that the polarizer of the polarizing glass chip and the micro-lens of the imaging chip are arranged close to each other via the gap, and the imaging element and the micro-lens of the imaging chip are sealed by the polarizing glass chip.

摘要翻译： 一种成像模块包括：成像芯片，包括在半导体衬底中引导入射光和成像元件的微透镜，并将入射光转换为电信号;以及偏振玻璃芯片，其包括具有偏振器的偏振滤光片玻璃， 配置在透明基板上的入射光使得偏振器面向微透镜，以及与偏振滤光片玻璃连接的间隔构件，以调节偏振片与成像芯片的微透镜之间的间隙。 在成像模块中，间隔件的熔融粘合表面熔融粘合到半导体衬底上，使得偏振玻璃芯片的偏振器和成像芯片的微透镜经由间隙彼此靠近配置， 并且成像芯片的成像元件和微透镜被偏光玻璃芯片密封。

公开(公告)号：US20110085220A1

公开(公告)日：2011-04-14

申请号：US12888814

申请日：2010-09-23

申请人： Eiji MOCHIZUKI

发明人： Eiji MOCHIZUKI

IPC分类号： G02B26/10

CPC分类号： G02B26/105 ,  G02B26/0841

摘要： An optical scanning device includes a substrate, a frame, a torsion beam, and a cantilever. The substrate has a three-layer structure including an oxide film sandwiched between two silicon substrates. The torsion beam swingably supports a mirror portion which deflects a light beam projected from a light source. The cantilever is supported by the frame to connect to the torsion beam and applies torque to the torsion beam. The cantilever and the torsion beam are formed on the same silicon substrate. The cantilever has a thickness substantially thinner than the thickness of the torsion beam. An image forming apparatus includes the optical scanning device. An image projection device includes the optical scanning device.

摘要翻译： 光学扫描装置包括基板，框架，扭转梁和悬臂。 衬底具有三层结构，其包括夹在两个硅衬底之间的氧化膜。 扭转梁可摆动地支撑使从光源投影的光束偏转的反射镜部分。 悬臂由框架支撑以连接到扭力梁并向扭转梁施加扭矩。 悬臂和扭转梁形成在同一硅衬底上。 悬臂具有比扭转梁的厚度更薄的厚度。 图像形成装置包括光学扫描装置。 图像投影装置包括光学扫描装置。

公开(公告)号：US20110085223A1

公开(公告)日：2011-04-14

申请号：US12973495

申请日：2010-12-20

申请人： Takayuki IDE ,  Tomoya UEDA ,  Shunichi SHINOHARA ,  Eiji MOCHIZUKI

发明人： Takayuki IDE ,  Tomoya UEDA ,  Shunichi SHINOHARA ,  Eiji MOCHIZUKI

IPC分类号： G02B26/02 ,  G02B7/00 ,  G02B7/14

CPC分类号： G03B9/02 ,  G03B17/12

摘要： A light adjusting apparatus includes a substrate (10, 40) having an aperture, a plurality of incident light adjusting units (20a, 20b, 20c) each moving in a same plane, and a plurality of driving units (50a, 50b, 50c) respectively driving the incident light adjusting units (20a, 20b, 20c), and adjusts an incident light passing through the aperture by mutually moving the incident light adjusting units (20a, 20b, 20c) with the driving units to an aperture position that is center-aligned with the aperture and a retracted position that is retracted from the aperture. An incident light adjusting unit that is moved to the aperture position is positioned by contacting with at least one of other incident light adjusting units that are retracted from the aperture.

摘要翻译： 一种调光装置，包括：具有孔的基板（10,40），分别在同一平面内移动的多个入射光调整单元（20a，20b，20c）和多个驱动单元（50a，50b，50c） 分别驱动入射光调节单元（20a，20b，20c），并且通过将入射光调节单元（20a，20b，20c）与驱动单元相互移动而调整入射光通过孔的入射光到作为中心的孔径位置 与光圈对准，并且从光圈缩回的缩回位置。 移动到孔径位置的入射光调节单元通过与从孔径缩回的其它入射光调节单元中的至少一个接触来定位。

公开(公告)号：US20140080262A1

公开(公告)日：2014-03-20

申请号：US14016754

申请日：2013-09-03

申请人： Yoshitaka NISHIMURA ,  Akira MOROZUMI ,  Kazunaga OHNISHI ,  Eiji MOCHIZUKI ,  Yoshikazu TAKAHASHI

发明人： Yoshitaka NISHIMURA ,  Akira MOROZUMI ,  Kazunaga OHNISHI ,  Eiji MOCHIZUKI ,  Yoshikazu TAKAHASHI

IPC分类号： H01L23/00 ,  H01L23/34

CPC分类号： H01L23/34 ,  H01L23/3735 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/3511 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K3/3463 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex; and solder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base.

摘要翻译： 一种半导体器件的制造方法，包括使用无铅焊料将半导体芯片焊接到包括陶瓷板的绝缘基板上，并且在其两个表面上具有导体层; 使辐射基体的与绝缘基板相反的一侧的表面翘曲为凸部; 并用无铅焊料将绝缘基板焊接到翘曲的辐射基底上，以便提供基本上平坦的焊接连接的散热基座。

公开(公告)号：US20120313224A1

公开(公告)日：2012-12-13

申请号：US13157746

申请日：2011-06-10

申请人： Kyohei FUKUDA ,  Eiji MOCHIZUKI ,  Mitsutoshi SAWANO ,  Takaaki SUZAWA

发明人： Kyohei FUKUDA ,  Eiji MOCHIZUKI ,  Mitsutoshi SAWANO ,  Takaaki SUZAWA

IPC分类号： H01L29/02 ,  H01L21/50 ,  H01L21/20

CPC分类号： H01L21/761 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/32 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7395 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/26145 ,  H01L2224/29023 ,  H01L2224/29024 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01327 ,  H01L2924/10156 ,  H01L2924/10158 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/3651 ,  H01L2924/3656 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device and manufacturing method are disclosed which prevent breakage and chipping of a semiconductor chip and improve device characteristics. A separation layer is in a side surface of an element end portion of the chip. An eave portion is formed by a depressed portion in the element end portion. A collector layer on the rear surface of the chip extends to a side wall and bottom surface of the depressed portion, and is connected to the separation layer. A collector electrode is over the whole surface of the collector layer, and is on the side wall of the depressed portion. The thickness of an outermost electrode film is 0.05 μm or less. The collector electrode on the rear surface of the chip is joined onto an insulating substrate via a solder layer, which covers the collector electrode on a flat portion of the rear surface of the semiconductor chip.

摘要翻译： 公开了一种半导体器件和制造方法，其防止半导体芯片的断裂和碎裂，并提高器件特性。 分离层位于芯片的元件端部的侧面。 檐部由元件端部的凹部形成。 芯片后表面上的集电体层延伸到凹陷部分的侧壁和底表面，并连接到分离层。 集电极位于集电极层的整个表面上，并且位于凹陷部分的侧壁上。 最外面的电极膜的厚度为0.05μm以下。 芯片后表面上的集电极通过焊料层接合在绝缘基板上，焊料层覆盖半导体芯片后表面的平坦部分上的集电极。

公开(公告)号：US20100055845A1

公开(公告)日：2010-03-04

申请号：US12576742

申请日：2009-10-09

申请人： Osamu IKAWA ,  Eiji MOCHIZUKI ,  Masayuki SOUTOME ,  Norio ARIKAWA

发明人： Osamu IKAWA ,  Eiji MOCHIZUKI ,  Masayuki SOUTOME ,  Norio ARIKAWA

IPC分类号： H01L21/50

CPC分类号： H01L23/49861 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： A power semiconductor module and a method of manufacture thereof includes lead a frame carrying lead having inner and outer lead portions. The outer lead portions, which are connected by soldering to semiconductor chips simultaneously, eliminate the need for using bonding wires. Since no bonding wire is used for connecting the leads and the semiconductor chips, a sufficient current capacity is obtained. The bonding between an insulating circuit board and the semiconductor chips and the bonding between the semiconductor chips and the leads can be made simultaneously in a single step of reflow-soldering. As a result, the mounting time can be shortened and the power semiconductor module can be manufactured more efficiently.

摘要翻译： 功率半导体模块及其制造方法包括引线，引线具有内部和外部引线部分的引线。 通过同时焊接到半导体芯片而连接的外引线部分消除了使用接合线的需要。 由于没有使用接合线来连接引线和半导体芯片，因此获得足够的电流容量。 绝缘电路板和半导体芯片之间的接合以及半导体芯片和引线之间的接合可以在回流焊接的单个步骤中同时进行。 结果，可以缩短安装时间，并且可以更有效地制造功率半导体模块。

公开(公告)号：US20080206928A1

公开(公告)日：2008-08-28

申请号：US12037721

申请日：2008-02-26

申请人： Kazunaga ONISHI ,  Yoshitaka NISHIMURA ,  Tatsuo NISHIZAWA ,  Eiji MOCHIZUKI

发明人： Kazunaga ONISHI ,  Yoshitaka NISHIMURA ,  Tatsuo NISHIZAWA ,  Eiji MOCHIZUKI

IPC分类号： H01L21/58 ,  H05K3/36

CPC分类号： H05K3/3452 ,  B23K1/20 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/48 ,  H01L2224/83051 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19043 ,  H05K3/0061 ,  H05K3/341 ,  H05K2203/0315 ,  H05K2203/107 ,  Y10T29/49126 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A soldering method of soldering first and second members includes shooting a laser light to at least one part of an outer peripheral portion surrounding a soldering-target region of the first member thereby to form an oxide film, and bonding the second member with the soldering-target region through a solder. According to the method, the solder resist is never exfoliated even after cleaning with chemicals for removing flux residues contained in solder.

摘要翻译： 焊接第一和第二构件的焊接方法包括：将激光照射到围绕第一构件的焊接对象区域的外周部分的至少一部分，从而形成氧化物膜，并且将第二构件与焊接 - 目标区域通过焊料。 根据该方法，即使在用化学品清洗以除去焊料中所含的焊剂残留物之后，阻焊剂也不会剥落。