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    Dual mask process for semiconductor devices
    2.
    发明授权
    Dual mask process for semiconductor devices 失效
    半导体器件的双掩模工艺

    公开(公告)号：US06429067B1

    公开(公告)日：2002-08-06

    申请号：US09765036

    申请日：2001-01-17

    申请人： Joyce C. Liu ,  James C. Brighten ,  Jeffrey J. Brown ,  John Golz ,  George A. Kaplita ,  Rebecca Mih ,  Senthil Srinivasan ,  Jin Jwang Wu ,  Teresa J. Wu ,  Chienfan Yu

    发明人： Joyce C. Liu ,  James C. Brighten ,  Jeffrey J. Brown ,  John Golz ,  George A. Kaplita ,  Rebecca Mih ,  Senthil Srinivasan ,  Jin Jwang Wu ,  Teresa J. Wu ,  Chienfan Yu

    IPC分类号： H01L218242

    CPC分类号： H01L27/10894 ,  H01L21/823842 ,  H01L27/10873

    摘要： A method for fabricating a dual gate structure, comprising providing a semiconductor substrate having a first device area and a second device area covered by a gate oxide layer and a polysilicon layer, forming a first hard mask over the polysilicon layer, said first hard mask being a material that is resistant to a first etching, but susceptible to a second etching forming a second hard mask over the first hard mask and the polysilicon layer, said second hard mask being a material that is resistant to a second etching, but susceptible to a first etching, patterning and etching said second hard mask with a first etch to form a gate pattern on a first device area, and patterning and etching said first hard mask with a second etch to transfer gate patterns on the first and second device areas.

    摘要翻译： 一种制造双栅结构的方法，包括提供半导体衬底，其具有由栅极氧化层和多晶硅层覆盖的第一器件区域和第二器件区域，在所述多晶硅层上形成第一硬掩模，所述第一硬掩模为 耐受第一蚀刻的材料，但易于在第一硬掩模和多晶硅层上形成第二硬掩模的第二蚀刻，所述第二硬掩模是耐第二蚀刻的材料，但易受第 首先用第一蚀刻蚀刻图案并蚀刻所述第二硬掩模，以在第一器件区域上形成栅极图案，并用第二蚀刻图案化和蚀刻所述第一硬掩模以在第一和第二器件区域上传输栅极图案。

    Method to controllably form notched polysilicon gate structures
    3.
    发明授权
    Method to controllably form notched polysilicon gate structures 失效
    可控地形成切口多晶硅栅极结构的方法

    公开(公告)号：US06541320B2

    公开(公告)日：2003-04-01

    申请号：US09928210

    申请日：2001-08-10

    申请人： Jeffrey Brown ,  Richard Wise ,  Hongwen Yan ,  Qingyun Yang ,  Chienfan Yu

    发明人： Jeffrey Brown ,  Richard Wise ,  Hongwen Yan ,  Qingyun Yang ,  Chienfan Yu

    IPC分类号： H01L21336

    CPC分类号： H01L21/32137 ,  H01L21/28114 ,  H01L21/32139 ,  H01L21/82385 ,  H01L29/42376

    摘要： A method and structure for forming a notched gate structure having a gate conductor layer on a gate dielectric layer. The gate conductor layer has a first thickness. The inventive method includes patterning a mask over the gate conductor layer, etching the gate conductor layer in regions not protected by the mask to a reduced thickness, (the reduced thickness being less than the first thickness), depositing a passivating film over the gate conductor layer, etching the passivating film to remove the passivating film from horizontal portions of the gate conductor layer (using an anisotropic etch), selectively etching the gate conductor layer to remove the gate conductor layer from all regions not protected by the mask or the passivating film. This forms undercut notches within the gate conductor layer at corner locations where the gate conductor meets the gate dielectric layer. The passivating film comprises a C-containing film, a Si-containing film, a Si—C-containing film or combinations thereof.

    摘要翻译： 一种用于形成在栅极介电层上具有栅极导体层的缺口栅极结构的方法和结构。 栅极导体层具有第一厚度。 本发明的方法包括在栅极导体层上图案化掩模，在未被掩模保护的区域中将栅极导体层蚀刻到减小的厚度（减小的厚度小于第一厚度），在栅极导体上沉积钝化膜 蚀刻钝化膜以从栅极导体层的水平部分去除钝化膜（使用各向异性蚀刻），选择性地蚀刻栅极导体层以从不受掩模或钝化膜保护的所有区域去除栅极导体层 。 这在栅极导体与栅极介电层相遇的拐角处形成栅极导体层内的底切凹口。 钝化膜包括含C的膜，含Si膜，含Si-C的膜或其组合。

    Oxide layer patterned by vapor phase etching
    5.
    发明授权
    Oxide layer patterned by vapor phase etching 失效
    通过气相蚀刻图案化的氧化物层

    公开(公告)号：US5876879A

    公开(公告)日：1999-03-02

    申请号：US865258

    申请日：1997-05-29

    申请人： Richard L. Kleinhenz ,  Wesley C. Natzle ,  Chienfan Yu

    发明人： Richard L. Kleinhenz ,  Wesley C. Natzle ,  Chienfan Yu

    IPC分类号： H01L21/311 ,  G03F9/00

    CPC分类号： H01L21/31116 ,  H01L21/31144

    摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

    摘要翻译： 可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。 当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。 此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。

    Trench sidewall patterned by vapor phase etching
    6.
    发明授权
    Trench sidewall patterned by vapor phase etching 失效
    通过气相蚀刻图案化的沟槽侧壁

    公开(公告)号：US5838055A

    公开(公告)日：1998-11-17

    申请号：US865261

    申请日：1997-05-29

    申请人： Richard L. Kleinhenz ,  Wesley C. Natzle ,  Chienfan Yu

    发明人： Richard L. Kleinhenz ,  Wesley C. Natzle ,  Chienfan Yu

    IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L27/108

    CPC分类号： H01L28/40 ,  H01L21/31111 ,  H01L21/31144

    摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

    摘要翻译： 可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。 当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。 此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。

    Endpoint detection by chemical reaction
    8.
    发明授权
    Endpoint detection by chemical reaction 有权
    通过化学反应进行端点检测

    公开(公告)号：US06419785B1

    公开(公告)日：2002-07-16

    申请号：US09678633

    申请日：2000-10-03

    申请人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei ,  Chienfan Yu

    发明人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei ,  Chienfan Yu

    IPC分类号： C23F102

    CPC分类号： B24B37/30 ,  B24B37/013 ,  H01L21/31053

    摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example, ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. The reaction product is extracted as a gas from the slurry and monitored using a threshold photoionization mass spectrometer.

    摘要翻译： 通过用选择性地产生化学反应产物的方法（例如，用含有KOH的浆料中的氮化物膜研磨晶片的氨），通过用任一种方法选择性地生成化学反应产物的方法（例如，氨） 目标或停止膜，并且在去除靶膜时监测化学反应产物的水平。 反应产物从浆液中提取为气体，并使用阈值光电离质谱仪进行监测。

    Selective dry etch of a dielectric film
    9.
    发明授权
    Selective dry etch of a dielectric film 失效
    电介质膜的选择性干蚀刻

    公开(公告)号：US06294102B1

    公开(公告)日：2001-09-25

    申请号：US09305432

    申请日：1999-05-05

    申请人： Delores A. Bennett ,  James P. Norum ,  Hongwen Yan ,  Chienfan Yu

    发明人： Delores A. Bennett ,  James P. Norum ,  Hongwen Yan ,  Chienfan Yu

    IPC分类号： H01L21311

    CPC分类号： H01L21/31116 ,  H01L21/3185

    摘要： A process of etching an oxide layer placed over a nitride layer of a substrate with high selectivity. The process comprises plasma etching the oxide layer of the substrate with a carbon and fluorine-containing gas and with a nitrogen-containing gas. A SixNy species is formed which is deposited on the nitride layer substantially in equilibrium with etching of the nitride layer.

    摘要翻译： 以高选择性蚀刻放置在衬底的氮化物层上的氧化物层的工艺。 该方法包括用含碳和含氟气体和含氮气体等离子体蚀刻衬底的氧化物层。 形成一个SixNy物质，其沉积在基本上与氮化物层的蚀刻平衡的氮化物层上。